KR100927209B1 - 에칭 처리장치 및 에칭 처리실용 부재 - Google Patents

에칭 처리장치 및 에칭 처리실용 부재 Download PDF

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Publication number
KR100927209B1
KR100927209B1 KR1020080018539A KR20080018539A KR100927209B1 KR 100927209 B1 KR100927209 B1 KR 100927209B1 KR 1020080018539 A KR1020080018539 A KR 1020080018539A KR 20080018539 A KR20080018539 A KR 20080018539A KR 100927209 B1 KR100927209 B1 KR 100927209B1
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KR
South Korea
Prior art keywords
etching
film
coating
plasma
spraying
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Expired - Fee Related
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KR1020080018539A
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English (en)
Korean (ko)
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KR20090080876A (ko
Inventor
무네오 후루세
신고 기무라
마사노리 가도타니
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가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20090080876A publication Critical patent/KR20090080876A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Coating By Spraying Or Casting (AREA)
KR1020080018539A 2008-01-22 2008-02-28 에칭 처리장치 및 에칭 처리실용 부재 Expired - Fee Related KR100927209B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008011036A JP2009176787A (ja) 2008-01-22 2008-01-22 エッチング処理装置及びエッチング処理室用部材
JPJP-P-2008-00011036 2008-01-22

Publications (2)

Publication Number Publication Date
KR20090080876A KR20090080876A (ko) 2009-07-27
KR100927209B1 true KR100927209B1 (ko) 2009-11-16

Family

ID=40875506

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080018539A Expired - Fee Related KR100927209B1 (ko) 2008-01-22 2008-02-28 에칭 처리장치 및 에칭 처리실용 부재

Country Status (3)

Country Link
US (1) US20090183835A1 (enExample)
JP (1) JP2009176787A (enExample)
KR (1) KR100927209B1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
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JP5452905B2 (ja) * 2008-10-31 2014-03-26 株式会社日本セラテック 耐食性部材
JP5651848B2 (ja) * 2012-01-18 2015-01-14 トーカロ株式会社 フッ化物サーメット複合皮膜被覆部材およびその製造方法
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
CN104342632B (zh) * 2013-08-07 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 预清洗腔室及等离子体加工设备
US10468235B2 (en) * 2013-09-18 2019-11-05 Applied Materials, Inc. Plasma spray coating enhancement using plasma flame heat treatment
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
CN105428195B (zh) * 2014-09-17 2018-07-17 东京毅力科创株式会社 等离子体处理装置用的部件和部件的制造方法
KR101670457B1 (ko) * 2014-11-28 2016-10-31 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
US20180327892A1 (en) 2017-05-10 2018-11-15 Applied Materials, Inc. Metal oxy-flouride films for chamber components
JP6924618B2 (ja) 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
JP7122854B2 (ja) 2018-04-20 2022-08-22 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置用部材、またはプラズマ処理装置の製造方法およびプラズマ処理装置用部材の製造方法
KR102789159B1 (ko) * 2018-11-05 2025-03-28 어플라이드 머티어리얼스, 인코포레이티드 자기 하우징 시스템들
KR102709625B1 (ko) 2021-08-23 2024-09-26 주식회사 히타치하이테크 플라스마 처리 장치용 보호 피막의 세정 방법
JP7607141B2 (ja) 2022-08-30 2024-12-26 株式会社日立ハイテク プラズマ処理装置、プラズマ処理装置の内部部材、および、プラズマ処理装置の内部部材の製造方法
WO2025027694A1 (ja) 2023-07-28 2025-02-06 株式会社日立ハイテク プラズマ処理装置用部材およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070090531A (ko) * 2006-03-03 2007-09-06 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 에칭장치 및 플라즈마 처리실 내 부재의 형성방법
KR20070094412A (ko) * 2006-03-17 2007-09-20 코스텍시스템(주) 이 중 열 차단 보호벽을 갖는 플라즈마 화학 증착 챔버

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Publication number Priority date Publication date Assignee Title
US4042006A (en) * 1973-01-05 1977-08-16 Siemens Aktiengesellschaft Pyrolytic process for producing a band-shaped metal layer on a substrate
JPH11351546A (ja) * 1998-06-08 1999-12-24 Tokuyama Corp 塩素含有量が低減された焼却飛灰の回収方法
JP2003224077A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd プラズマ処理装置、電極部材、バッフル板の製造方法、処理装置、および、表面処理方法
US20080011421A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Processing chamber having labyrinth seal
JP4503270B2 (ja) * 2002-11-28 2010-07-14 東京エレクトロン株式会社 プラズマ処理容器内部材
JP4051351B2 (ja) * 2004-03-12 2008-02-20 トーカロ株式会社 熱放射性および耐損傷性に優れるｙ２ｏ３溶射皮膜被覆部材およびその製造方法
JP2006199545A (ja) * 2005-01-21 2006-08-03 Toshiba Ceramics Co Ltd イットリウム系セラミックス被覆材およびその製造方法
AT503377B1 (de) * 2006-02-02 2008-09-15 Eiselt Primoz Verfahren und vorrichtung zur plasmabehandlung von materialien
JP4643478B2 (ja) * 2006-03-20 2011-03-02 トーカロ株式会社 半導体加工装置用セラミック被覆部材の製造方法
JP4563966B2 (ja) * 2006-05-31 2010-10-20 トーカロ株式会社 半導体加工装置用部材およびその製造方法
JP2009161846A (ja) * 2007-12-10 2009-07-23 Densho Engineering Co Ltd プラズマ処理容器内部材の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070090531A (ko) * 2006-03-03 2007-09-06 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 에칭장치 및 플라즈마 처리실 내 부재의 형성방법
KR20070094412A (ko) * 2006-03-17 2007-09-20 코스텍시스템(주) 이 중 열 차단 보호벽을 갖는 플라즈마 화학 증착 챔버

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Publication number Publication date
KR20090080876A (ko) 2009-07-27
JP2009176787A (ja) 2009-08-06
US20090183835A1 (en) 2009-07-23

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