JP2009176787A - エッチング処理装置及びエッチング処理室用部材 - Google Patents

エッチング処理装置及びエッチング処理室用部材 Download PDF

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Publication number
JP2009176787A
JP2009176787A JP2008011036A JP2008011036A JP2009176787A JP 2009176787 A JP2009176787 A JP 2009176787A JP 2008011036 A JP2008011036 A JP 2008011036A JP 2008011036 A JP2008011036 A JP 2008011036A JP 2009176787 A JP2009176787 A JP 2009176787A
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Japan
Prior art keywords
etching
coating
plasma
sprayed
film
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Pending
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JP2008011036A
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English (en)
Japanese (ja)
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JP2009176787A5 (enExample
Inventor
Muneo Furuse
宗雄 古瀬
Shingo Kimura
伸吾 木村
Masanori Sumiya
匡規 角谷
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2008011036A priority Critical patent/JP2009176787A/ja
Priority to KR1020080018539A priority patent/KR100927209B1/ko
Priority to US12/040,058 priority patent/US20090183835A1/en
Publication of JP2009176787A publication Critical patent/JP2009176787A/ja
Publication of JP2009176787A5 publication Critical patent/JP2009176787A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Coating By Spraying Or Casting (AREA)
JP2008011036A 2008-01-22 2008-01-22 エッチング処理装置及びエッチング処理室用部材 Pending JP2009176787A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008011036A JP2009176787A (ja) 2008-01-22 2008-01-22 エッチング処理装置及びエッチング処理室用部材
KR1020080018539A KR100927209B1 (ko) 2008-01-22 2008-02-28 에칭 처리장치 및 에칭 처리실용 부재
US12/040,058 US20090183835A1 (en) 2008-01-22 2008-02-29 Etching process apparatus and member for etching process chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008011036A JP2009176787A (ja) 2008-01-22 2008-01-22 エッチング処理装置及びエッチング処理室用部材

Publications (2)

Publication Number Publication Date
JP2009176787A true JP2009176787A (ja) 2009-08-06
JP2009176787A5 JP2009176787A5 (enExample) 2011-03-31

Family

ID=40875506

Family Applications (1)

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JP2008011036A Pending JP2009176787A (ja) 2008-01-22 2008-01-22 エッチング処理装置及びエッチング処理室用部材

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Country Link
US (1) US20090183835A1 (enExample)
JP (1) JP2009176787A (enExample)
KR (1) KR100927209B1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010106328A (ja) * 2008-10-31 2010-05-13 Nihon Ceratec Co Ltd 耐食性部材
JP2013147690A (ja) * 2012-01-18 2013-08-01 Tocalo Co Ltd フッ化物サーメット複合皮膜被覆部材およびその製造方法
JP2016539250A (ja) * 2013-09-18 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ火炎熱処理を用いたプラズマ溶射コーティングの強化
JP2018117137A (ja) * 2013-08-07 2018-07-26 北京北方華創微電子装備有限公司Ｂｅｉｊｉｎｇ Ｎａｕｒａ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．， Ｌｔｄ． プレクリーニングチャンバおよび半導体処理装置
JP2021120346A (ja) * 2012-02-22 2021-08-19 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated セラミックコーティングを有する熱処理されたセラミック基板及びコートされたセラミックスへの熱処理
KR20230031187A (ko) 2021-08-23 2023-03-07 주식회사 히타치하이테크 플라스마 처리 장치용 보호 피막의 세정 방법
KR20240032700A (ko) 2022-08-30 2024-03-12 주식회사 히타치하이테크 플라스마 처리 장치, 플라스마 처리 장치의 내부 부재, 및 플라스마 처리 장치의 내부 부재의 제조 방법
KR20250019608A (ko) 2023-07-28 2025-02-10 주식회사 히타치하이테크 플라스마 처리 장치용 부재 및 그 제조 방법
US12494348B2 (en) 2018-04-20 2025-12-09 Hitachi High-Tech Corporation Plasma processing apparatus and member of plasma processing chamber

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9869013B2 (en) * 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
CN105428195B (zh) * 2014-09-17 2018-07-17 东京毅力科创株式会社 等离子体处理装置用的部件和部件的制造方法
KR101670457B1 (ko) * 2014-11-28 2016-10-31 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
US10563303B2 (en) 2017-05-10 2020-02-18 Applied Materials, Inc. Metal oxy-flouride films based on oxidation of metal flourides
JP6924618B2 (ja) * 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
KR20250048485A (ko) * 2018-11-05 2025-04-08 어플라이드 머티어리얼스, 인코포레이티드 자기 하우징 시스템들

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11351546A (ja) * 1998-06-08 1999-12-24 Tokuyama Corp 塩素含有量が低減された焼却飛灰の回収方法
JP2004190136A (ja) * 2002-11-28 2004-07-08 Tokyo Electron Ltd プラズマ処理容器内部材
JP2005256098A (ja) * 2004-03-12 2005-09-22 Tocalo Co Ltd 熱放射性および耐損傷性に優れるｙ２ｏ３溶射皮膜被覆部材およびその製造方法
JP2006199545A (ja) * 2005-01-21 2006-08-03 Toshiba Ceramics Co Ltd イットリウム系セラミックス被覆材およびその製造方法
JP2007324353A (ja) * 2006-05-31 2007-12-13 Tocalo Co Ltd 半導体加工装置用部材およびその製造方法
JP2009161846A (ja) * 2007-12-10 2009-07-23 Densho Engineering Co Ltd プラズマ処理容器内部材の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042006A (en) * 1973-01-05 1977-08-16 Siemens Aktiengesellschaft Pyrolytic process for producing a band-shaped metal layer on a substrate
JP2003224077A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd プラズマ処理装置、電極部材、バッフル板の製造方法、処理装置、および、表面処理方法
US20080011421A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Processing chamber having labyrinth seal
AT503377B1 (de) * 2006-02-02 2008-09-15 Eiselt Primoz Verfahren und vorrichtung zur plasmabehandlung von materialien
KR100819530B1 (ko) * 2006-03-03 2008-04-04 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 에칭장치 및 플라즈마 처리실 내 부재의 형성방법
KR20070094412A (ko) * 2006-03-17 2007-09-20 코스텍시스템(주) 이 중 열 차단 보호벽을 갖는 플라즈마 화학 증착 챔버
JP4643478B2 (ja) * 2006-03-20 2011-03-02 トーカロ株式会社 半導体加工装置用セラミック被覆部材の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11351546A (ja) * 1998-06-08 1999-12-24 Tokuyama Corp 塩素含有量が低減された焼却飛灰の回収方法
JP2004190136A (ja) * 2002-11-28 2004-07-08 Tokyo Electron Ltd プラズマ処理容器内部材
JP2005256098A (ja) * 2004-03-12 2005-09-22 Tocalo Co Ltd 熱放射性および耐損傷性に優れるｙ２ｏ３溶射皮膜被覆部材およびその製造方法
JP2006199545A (ja) * 2005-01-21 2006-08-03 Toshiba Ceramics Co Ltd イットリウム系セラミックス被覆材およびその製造方法
JP2007324353A (ja) * 2006-05-31 2007-12-13 Tocalo Co Ltd 半導体加工装置用部材およびその製造方法
JP2009161846A (ja) * 2007-12-10 2009-07-23 Densho Engineering Co Ltd プラズマ処理容器内部材の製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010106328A (ja) * 2008-10-31 2010-05-13 Nihon Ceratec Co Ltd 耐食性部材
JP2013147690A (ja) * 2012-01-18 2013-08-01 Tocalo Co Ltd フッ化物サーメット複合皮膜被覆部材およびその製造方法
JP2021120346A (ja) * 2012-02-22 2021-08-19 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated セラミックコーティングを有する熱処理されたセラミック基板及びコートされたセラミックスへの熱処理
JP2018117137A (ja) * 2013-08-07 2018-07-26 北京北方華創微電子装備有限公司Ｂｅｉｊｉｎｇ Ｎａｕｒａ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．， Ｌｔｄ． プレクリーニングチャンバおよび半導体処理装置
JP2016539250A (ja) * 2013-09-18 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ火炎熱処理を用いたプラズマ溶射コーティングの強化
US12494348B2 (en) 2018-04-20 2025-12-09 Hitachi High-Tech Corporation Plasma processing apparatus and member of plasma processing chamber
KR20230031187A (ko) 2021-08-23 2023-03-07 주식회사 히타치하이테크 플라스마 처리 장치용 보호 피막의 세정 방법
US12437978B2 (en) 2021-08-23 2025-10-07 Hitachi High-Tech Corporation Cleaning method of film layer in the plasma processing apparatus
KR20240032700A (ko) 2022-08-30 2024-03-12 주식회사 히타치하이테크 플라스마 처리 장치, 플라스마 처리 장치의 내부 부재, 및 플라스마 처리 장치의 내부 부재의 제조 방법
KR20250019608A (ko) 2023-07-28 2025-02-10 주식회사 히타치하이테크 플라스마 처리 장치용 부재 및 그 제조 방법

Also Published As

Publication number Publication date
KR20090080876A (ko) 2009-07-27
US20090183835A1 (en) 2009-07-23
KR100927209B1 (ko) 2009-11-16

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