JP2009176787A5 - - Google Patents

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Publication number
JP2009176787A5
JP2009176787A5 JP2008011036A JP2008011036A JP2009176787A5 JP 2009176787 A5 JP2009176787 A5 JP 2009176787A5 JP 2008011036 A JP2008011036 A JP 2008011036A JP 2008011036 A JP2008011036 A JP 2008011036A JP 2009176787 A5 JP2009176787 A5 JP 2009176787A5
Authority
JP
Japan
Prior art keywords
etching
coating
sealed
processing apparatus
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008011036A
Other languages
English (en)
Japanese (ja)
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JP2009176787A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008011036A priority Critical patent/JP2009176787A/ja
Priority claimed from JP2008011036A external-priority patent/JP2009176787A/ja
Priority to KR1020080018539A priority patent/KR100927209B1/ko
Priority to US12/040,058 priority patent/US20090183835A1/en
Publication of JP2009176787A publication Critical patent/JP2009176787A/ja
Publication of JP2009176787A5 publication Critical patent/JP2009176787A5/ja
Pending legal-status Critical Current

Links

JP2008011036A 2008-01-22 2008-01-22 エッチング処理装置及びエッチング処理室用部材 Pending JP2009176787A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008011036A JP2009176787A (ja) 2008-01-22 2008-01-22 エッチング処理装置及びエッチング処理室用部材
KR1020080018539A KR100927209B1 (ko) 2008-01-22 2008-02-28 에칭 처리장치 및 에칭 처리실용 부재
US12/040,058 US20090183835A1 (en) 2008-01-22 2008-02-29 Etching process apparatus and member for etching process chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008011036A JP2009176787A (ja) 2008-01-22 2008-01-22 エッチング処理装置及びエッチング処理室用部材

Publications (2)

Publication Number Publication Date
JP2009176787A JP2009176787A (ja) 2009-08-06
JP2009176787A5 true JP2009176787A5 (enExample) 2011-03-31

Family

ID=40875506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008011036A Pending JP2009176787A (ja) 2008-01-22 2008-01-22 エッチング処理装置及びエッチング処理室用部材

Country Status (3)

Country Link
US (1) US20090183835A1 (enExample)
JP (1) JP2009176787A (enExample)
KR (1) KR100927209B1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5452905B2 (ja) * 2008-10-31 2014-03-26 株式会社日本セラテック 耐食性部材
JP5651848B2 (ja) * 2012-01-18 2015-01-14 トーカロ株式会社 フッ化物サーメット複合皮膜被覆部材およびその製造方法
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
CN104342632B (zh) * 2013-08-07 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 预清洗腔室及等离子体加工设备
US10468235B2 (en) 2013-09-18 2019-11-05 Applied Materials, Inc. Plasma spray coating enhancement using plasma flame heat treatment
US9869013B2 (en) * 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
CN105428195B (zh) * 2014-09-17 2018-07-17 东京毅力科创株式会社 等离子体处理装置用的部件和部件的制造方法
KR101670457B1 (ko) * 2014-11-28 2016-10-31 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
US10563303B2 (en) 2017-05-10 2020-02-18 Applied Materials, Inc. Metal oxy-flouride films based on oxidation of metal flourides
JP6924618B2 (ja) * 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
JP7122854B2 (ja) 2018-04-20 2022-08-22 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置用部材、またはプラズマ処理装置の製造方法およびプラズマ処理装置用部材の製造方法
CN112889128B (zh) * 2018-11-05 2024-04-12 应用材料公司 磁性壳体系统
JP7358655B2 (ja) 2021-08-23 2023-10-10 株式会社日立ハイテク プラズマ処理装置用保護皮膜の洗浄方法
CN117957641A (zh) 2022-08-30 2024-04-30 株式会社日立高新技术 等离子处理装置、等离子处理装置的内部构件以及等离子处理装置的内部构件的制造方法
CN119731768A (zh) 2023-07-28 2025-03-28 株式会社日立高新技术 等离子处理装置用构件以及其制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042006A (en) * 1973-01-05 1977-08-16 Siemens Aktiengesellschaft Pyrolytic process for producing a band-shaped metal layer on a substrate
JPH11351546A (ja) * 1998-06-08 1999-12-24 Tokuyama Corp 塩素含有量が低減された焼却飛灰の回収方法
JP2003224077A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd プラズマ処理装置、電極部材、バッフル板の製造方法、処理装置、および、表面処理方法
US20080011421A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Processing chamber having labyrinth seal
JP4503270B2 (ja) * 2002-11-28 2010-07-14 東京エレクトロン株式会社 プラズマ処理容器内部材
JP4051351B2 (ja) * 2004-03-12 2008-02-20 トーカロ株式会社 熱放射性および耐損傷性に優れるｙ２ｏ３溶射皮膜被覆部材およびその製造方法
JP2006199545A (ja) * 2005-01-21 2006-08-03 Toshiba Ceramics Co Ltd イットリウム系セラミックス被覆材およびその製造方法
AT503377B1 (de) * 2006-02-02 2008-09-15 Eiselt Primoz Verfahren und vorrichtung zur plasmabehandlung von materialien
KR100819530B1 (ko) * 2006-03-03 2008-04-04 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 에칭장치 및 플라즈마 처리실 내 부재의 형성방법
KR20070094412A (ko) * 2006-03-17 2007-09-20 코스텍시스템(주) 이 중 열 차단 보호벽을 갖는 플라즈마 화학 증착 챔버
JP4643478B2 (ja) * 2006-03-20 2011-03-02 トーカロ株式会社 半導体加工装置用セラミック被覆部材の製造方法
JP4563966B2 (ja) * 2006-05-31 2010-10-20 トーカロ株式会社 半導体加工装置用部材およびその製造方法
JP2009161846A (ja) * 2007-12-10 2009-07-23 Densho Engineering Co Ltd プラズマ処理容器内部材の製造方法

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