KR100918129B1 - 본드 패드를 갖는 상호 결선 구조체 및 본드 패드 상의범프 사이트 형성 방법 - Google Patents
본드 패드를 갖는 상호 결선 구조체 및 본드 패드 상의범프 사이트 형성 방법Info
- Publication number
- KR100918129B1 KR100918129B1 KR1020077018441A KR20077018441A KR100918129B1 KR 100918129 B1 KR100918129 B1 KR 100918129B1 KR 1020077018441 A KR1020077018441 A KR 1020077018441A KR 20077018441 A KR20077018441 A KR 20077018441A KR 100918129 B1 KR100918129 B1 KR 100918129B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- dielectric layer
- dielectric
- workpiece
- over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/032,975 | 2005-01-10 | ||
| US11/032,975 US7282433B2 (en) | 2005-01-10 | 2005-01-10 | Interconnect structures with bond-pads and methods of forming bump sites on bond-pads |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070096016A KR20070096016A (ko) | 2007-10-01 |
| KR100918129B1 true KR100918129B1 (ko) | 2009-09-17 |
Family
ID=36282804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077018441A Expired - Lifetime KR100918129B1 (ko) | 2005-01-10 | 2007-08-10 | 본드 패드를 갖는 상호 결선 구조체 및 본드 패드 상의범프 사이트 형성 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7282433B2 (https=) |
| EP (2) | EP3220416B1 (https=) |
| JP (1) | JP5321873B2 (https=) |
| KR (1) | KR100918129B1 (https=) |
| TW (1) | TWI387018B (https=) |
| WO (1) | WO2006074470A1 (https=) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7091124B2 (en) | 2003-11-13 | 2006-08-15 | Micron Technology, Inc. | Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices |
| US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
| US20050247894A1 (en) | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
| US7232754B2 (en) * | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
| US7425499B2 (en) | 2004-08-24 | 2008-09-16 | Micron Technology, Inc. | Methods for forming interconnects in vias and microelectronic workpieces including such interconnects |
| SG120200A1 (en) | 2004-08-27 | 2006-03-28 | Micron Technology Inc | Slanted vias for electrical circuits on circuit boards and other substrates |
| US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
| US7271482B2 (en) | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
| US7282433B2 (en) | 2005-01-10 | 2007-10-16 | Micron Technology, Inc. | Interconnect structures with bond-pads and methods of forming bump sites on bond-pads |
| TW200638497A (en) * | 2005-04-19 | 2006-11-01 | Elan Microelectronics Corp | Bumping process and bump structure |
| US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
| US20070045812A1 (en) * | 2005-08-31 | 2007-03-01 | Micron Technology, Inc. | Microfeature assemblies including interconnect structures and methods for forming such interconnect structures |
| US7863187B2 (en) | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
| US7622377B2 (en) | 2005-09-01 | 2009-11-24 | Micron Technology, Inc. | Microfeature workpiece substrates having through-substrate vias, and associated methods of formation |
| US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
| US7271086B2 (en) * | 2005-09-01 | 2007-09-18 | Micron Technology, Inc. | Microfeature workpieces and methods of forming a redistribution layer on microfeature workpieces |
| US20070145367A1 (en) * | 2005-12-27 | 2007-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional integrated circuit structure |
| KR100731081B1 (ko) * | 2005-12-30 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 패시베이션 형성 방법 |
| US7749899B2 (en) | 2006-06-01 | 2010-07-06 | Micron Technology, Inc. | Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces |
| US7745319B2 (en) * | 2006-08-22 | 2010-06-29 | Micron Technology, Inc. | System and method for fabricating a fin field effect transistor |
| US7629249B2 (en) | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
| US7902643B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
| KR20090075883A (ko) * | 2006-10-31 | 2009-07-09 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 알루미늄 단자 금속층이 없는 금속화층 스택 |
| DE102006051491A1 (de) * | 2006-10-31 | 2008-05-15 | Advanced Micro Devices, Inc., Sunnyvale | Metallisierungsschichtstapel mit einer Aluminiumabschlussmetallschicht |
| US8981548B2 (en) | 2007-05-25 | 2015-03-17 | Stats Chippac Ltd. | Integrated circuit package system with relief |
| SG150410A1 (en) | 2007-08-31 | 2009-03-30 | Micron Technology Inc | Partitioned through-layer via and associated systems and methods |
| US7939949B2 (en) * | 2007-09-27 | 2011-05-10 | Micron Technology, Inc. | Semiconductor device with copper wirebond sites and methods of making same |
| US7884015B2 (en) | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
| US8084854B2 (en) | 2007-12-28 | 2011-12-27 | Micron Technology, Inc. | Pass-through 3D interconnect for microelectronic dies and associated systems and methods |
| KR101037832B1 (ko) * | 2008-05-09 | 2011-05-31 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
| US8253230B2 (en) | 2008-05-15 | 2012-08-28 | Micron Technology, Inc. | Disabling electrical connections using pass-through 3D interconnects and associated systems and methods |
| WO2009146373A1 (en) * | 2008-05-28 | 2009-12-03 | Mvm Technoloiges, Inc. | Maskless process for solder bumps production |
| JP2010251687A (ja) * | 2009-03-26 | 2010-11-04 | Sanyo Electric Co Ltd | 半導体装置 |
| US8148257B1 (en) * | 2010-09-30 | 2012-04-03 | Infineon Technologies Ag | Semiconductor structure and method for making same |
| KR101210352B1 (ko) | 2011-02-15 | 2012-12-10 | 에스케이하이닉스 주식회사 | 반도체 패키지 및 그의 제조방법 |
| WO2013033034A2 (en) * | 2011-08-26 | 2013-03-07 | Lawrence Livermore National Security, Llc | Method for making high-density electrical interconnections using rivet bonds |
| US20130140671A1 (en) * | 2011-12-06 | 2013-06-06 | Win Semiconductors Corp. | Compound semiconductor integrated circuit with three-dimensionally formed components |
| TWI473226B (zh) * | 2012-01-09 | 2015-02-11 | 穩懋半導體股份有限公司 | 具有三維元件之化合物半導體積體電路 |
| CN103208472B (zh) * | 2012-01-12 | 2016-03-02 | 稳懋半导体股份有限公司 | 具有三维元件的复合物半导体集成电路 |
| US9609752B1 (en) | 2013-03-15 | 2017-03-28 | Lockheed Martin Corporation | Interconnect structure configured to control solder flow and method of manufacturing of same |
| US9487396B2 (en) * | 2014-09-04 | 2016-11-08 | Invensense, Inc. | Release chemical protection for integrated complementary metal-oxide-semiconductor (CMOS) and micro-electro-mechanical (MEMS) devices |
| US9627224B2 (en) * | 2015-03-30 | 2017-04-18 | Stmicroelectronics, Inc. | Semiconductor device with sloped sidewall and related methods |
| US11721784B2 (en) | 2017-03-30 | 2023-08-08 | Vuereal Inc. | High efficient micro devices |
| CN110709989B (zh) | 2017-03-30 | 2023-12-01 | 维耶尔公司 | 垂直固态装置 |
| KR20230139247A (ko) | 2022-03-25 | 2023-10-05 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5736456A (en) * | 1996-03-07 | 1998-04-07 | Micron Technology, Inc. | Method of forming conductive bumps on die for flip chip applications |
| EP0949672A2 (en) * | 1998-04-08 | 1999-10-13 | Texas Instruments Incorporated | PO Flow for copper metallization |
| US6451681B1 (en) * | 1999-10-04 | 2002-09-17 | Motorola, Inc. | Method of forming copper interconnection utilizing aluminum capping film |
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| KR100306842B1 (ko) * | 1999-09-30 | 2001-11-02 | 윤종용 | 범프 패드에 오목 패턴이 형성된 재배치 웨이퍼 레벨 칩 사이즈 패키지 및 그 제조방법 |
| JP2001196413A (ja) * | 2000-01-12 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置、該半導体装置の製造方法、cmp装置、及びcmp方法 |
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| JP2003100744A (ja) * | 2001-09-21 | 2003-04-04 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
| US20030116845A1 (en) * | 2001-12-21 | 2003-06-26 | Bojkov Christo P. | Waferlevel method for direct bumping on copper pads in integrated circuits |
| TW531874B (en) * | 2002-04-11 | 2003-05-11 | Taiwan Semiconductor Mfg | Method for manufacturing pre-solder bumps of buildup substrate |
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| TW557562B (en) * | 2002-08-12 | 2003-10-11 | Via Tech Inc | Flip chip bonding structure and technology |
| JP2004281491A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体装置及びその製造方法 |
| US20040232560A1 (en) * | 2003-05-22 | 2004-11-25 | Chao-Yuan Su | Flip chip assembly process and substrate used therewith |
| JP2004356453A (ja) * | 2003-05-30 | 2004-12-16 | Trecenti Technologies Inc | 半導体装置およびその製造方法 |
| US7282433B2 (en) | 2005-01-10 | 2007-10-16 | Micron Technology, Inc. | Interconnect structures with bond-pads and methods of forming bump sites on bond-pads |
-
2005
- 2005-01-10 US US11/032,975 patent/US7282433B2/en not_active Expired - Lifetime
-
2006
- 2006-01-10 JP JP2007550572A patent/JP5321873B2/ja not_active Expired - Lifetime
- 2006-01-10 TW TW095100929A patent/TWI387018B/zh not_active IP Right Cessation
- 2006-01-10 WO PCT/US2006/000881 patent/WO2006074470A1/en not_active Ceased
- 2006-01-10 EP EP17163986.7A patent/EP3220416B1/en not_active Expired - Lifetime
- 2006-01-10 EP EP06718008.3A patent/EP1842233B1/en not_active Expired - Lifetime
-
2007
- 2007-08-10 KR KR1020077018441A patent/KR100918129B1/ko not_active Expired - Lifetime
- 2007-10-15 US US11/872,607 patent/US7528064B2/en not_active Expired - Lifetime
-
2009
- 2009-03-23 US US12/409,305 patent/US7939948B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5736456A (en) * | 1996-03-07 | 1998-04-07 | Micron Technology, Inc. | Method of forming conductive bumps on die for flip chip applications |
| EP0949672A2 (en) * | 1998-04-08 | 1999-10-13 | Texas Instruments Incorporated | PO Flow for copper metallization |
| US6451681B1 (en) * | 1999-10-04 | 2002-09-17 | Motorola, Inc. | Method of forming copper interconnection utilizing aluminum capping film |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3220416B1 (en) | 2018-10-03 |
| EP1842233A1 (en) | 2007-10-10 |
| US20060151880A1 (en) | 2006-07-13 |
| TWI387018B (zh) | 2013-02-21 |
| US20080032494A1 (en) | 2008-02-07 |
| US7528064B2 (en) | 2009-05-05 |
| EP1842233B1 (en) | 2017-05-24 |
| JP5321873B2 (ja) | 2013-10-23 |
| JP2008527727A (ja) | 2008-07-24 |
| EP3220416A1 (en) | 2017-09-20 |
| WO2006074470A1 (en) | 2006-07-13 |
| US7282433B2 (en) | 2007-10-16 |
| WO2006074470B1 (en) | 2006-11-16 |
| TW200629451A (en) | 2006-08-16 |
| US7939948B2 (en) | 2011-05-10 |
| US20090179330A1 (en) | 2009-07-16 |
| KR20070096016A (ko) | 2007-10-01 |
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Legal Events
| Date | Code | Title | Description |
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