JP5321873B2 - 接合パッドを具えた相互接続構造、および、接合パッド上にバンプ部位を作成する方法 - Google Patents

接合パッドを具えた相互接続構造、および、接合パッド上にバンプ部位を作成する方法 Download PDF

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Publication number
JP5321873B2
JP5321873B2 JP2007550572A JP2007550572A JP5321873B2 JP 5321873 B2 JP5321873 B2 JP 5321873B2 JP 2007550572 A JP2007550572 A JP 2007550572A JP 2007550572 A JP2007550572 A JP 2007550572A JP 5321873 B2 JP5321873 B2 JP 5321873B2
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layer
dielectric
cap
dielectric layer
bond pad
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JP2008527727A5 (https=
JP2008527727A (ja
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タン，サン，ディー．
タトル，マーク，イー．
クック，キース，アール．
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マイクロン テクノロジー， インク．
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007550572A 2005-01-10 2006-01-10 接合パッドを具えた相互接続構造、および、接合パッド上にバンプ部位を作成する方法 Expired - Lifetime JP5321873B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/032,975 2005-01-10
US11/032,975 US7282433B2 (en) 2005-01-10 2005-01-10 Interconnect structures with bond-pads and methods of forming bump sites on bond-pads
PCT/US2006/000881 WO2006074470A1 (en) 2005-01-10 2006-01-10 Interconnect structures with bond-pads and methods of forming bump sites on bond-pads

Publications (3)

Publication Number Publication Date
JP2008527727A JP2008527727A (ja) 2008-07-24
JP2008527727A5 JP2008527727A5 (https=) 2008-09-11
JP5321873B2 true JP5321873B2 (ja) 2013-10-23

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JP2007550572A Expired - Lifetime JP5321873B2 (ja) 2005-01-10 2006-01-10 接合パッドを具えた相互接続構造、および、接合パッド上にバンプ部位を作成する方法

Country Status (6)

Country Link
US (3) US7282433B2 (https=)
EP (2) EP3220416B1 (https=)
JP (1) JP5321873B2 (https=)
KR (1) KR100918129B1 (https=)
TW (1) TWI387018B (https=)
WO (1) WO2006074470A1 (https=)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7091124B2 (en) 2003-11-13 2006-08-15 Micron Technology, Inc. Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices
US8084866B2 (en) 2003-12-10 2011-12-27 Micron Technology, Inc. Microelectronic devices and methods for filling vias in microelectronic devices
US20050247894A1 (en) 2004-05-05 2005-11-10 Watkins Charles M Systems and methods for forming apertures in microfeature workpieces
US7232754B2 (en) * 2004-06-29 2007-06-19 Micron Technology, Inc. Microelectronic devices and methods for forming interconnects in microelectronic devices
US7425499B2 (en) 2004-08-24 2008-09-16 Micron Technology, Inc. Methods for forming interconnects in vias and microelectronic workpieces including such interconnects
SG120200A1 (en) 2004-08-27 2006-03-28 Micron Technology Inc Slanted vias for electrical circuits on circuit boards and other substrates
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7271482B2 (en) 2004-12-30 2007-09-18 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US7282433B2 (en) 2005-01-10 2007-10-16 Micron Technology, Inc. Interconnect structures with bond-pads and methods of forming bump sites on bond-pads
TW200638497A (en) * 2005-04-19 2006-11-01 Elan Microelectronics Corp Bumping process and bump structure
US7795134B2 (en) 2005-06-28 2010-09-14 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
US20070045812A1 (en) * 2005-08-31 2007-03-01 Micron Technology, Inc. Microfeature assemblies including interconnect structures and methods for forming such interconnect structures
US7863187B2 (en) 2005-09-01 2011-01-04 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7622377B2 (en) 2005-09-01 2009-11-24 Micron Technology, Inc. Microfeature workpiece substrates having through-substrate vias, and associated methods of formation
US7262134B2 (en) 2005-09-01 2007-08-28 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7271086B2 (en) * 2005-09-01 2007-09-18 Micron Technology, Inc. Microfeature workpieces and methods of forming a redistribution layer on microfeature workpieces
US20070145367A1 (en) * 2005-12-27 2007-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional integrated circuit structure
KR100731081B1 (ko) * 2005-12-30 2007-06-22 동부일렉트로닉스 주식회사 패시베이션 형성 방법
US7749899B2 (en) 2006-06-01 2010-07-06 Micron Technology, Inc. Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces
US7745319B2 (en) * 2006-08-22 2010-06-29 Micron Technology, Inc. System and method for fabricating a fin field effect transistor
US7629249B2 (en) 2006-08-28 2009-12-08 Micron Technology, Inc. Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods
US7902643B2 (en) 2006-08-31 2011-03-08 Micron Technology, Inc. Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods
KR20090075883A (ko) * 2006-10-31 2009-07-09 어드밴스드 마이크로 디바이시즈, 인코포레이티드 알루미늄 단자 금속층이 없는 금속화층 스택
DE102006051491A1 (de) * 2006-10-31 2008-05-15 Advanced Micro Devices, Inc., Sunnyvale Metallisierungsschichtstapel mit einer Aluminiumabschlussmetallschicht
US8981548B2 (en) 2007-05-25 2015-03-17 Stats Chippac Ltd. Integrated circuit package system with relief
SG150410A1 (en) 2007-08-31 2009-03-30 Micron Technology Inc Partitioned through-layer via and associated systems and methods
US7939949B2 (en) * 2007-09-27 2011-05-10 Micron Technology, Inc. Semiconductor device with copper wirebond sites and methods of making same
US7884015B2 (en) 2007-12-06 2011-02-08 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US8084854B2 (en) 2007-12-28 2011-12-27 Micron Technology, Inc. Pass-through 3D interconnect for microelectronic dies and associated systems and methods
KR101037832B1 (ko) * 2008-05-09 2011-05-31 앰코 테크놀로지 코리아 주식회사 반도체 디바이스 및 그 제조 방법
US8253230B2 (en) 2008-05-15 2012-08-28 Micron Technology, Inc. Disabling electrical connections using pass-through 3D interconnects and associated systems and methods
WO2009146373A1 (en) * 2008-05-28 2009-12-03 Mvm Technoloiges, Inc. Maskless process for solder bumps production
JP2010251687A (ja) * 2009-03-26 2010-11-04 Sanyo Electric Co Ltd 半導体装置
US8148257B1 (en) * 2010-09-30 2012-04-03 Infineon Technologies Ag Semiconductor structure and method for making same
KR101210352B1 (ko) 2011-02-15 2012-12-10 에스케이하이닉스 주식회사 반도체 패키지 및 그의 제조방법
WO2013033034A2 (en) * 2011-08-26 2013-03-07 Lawrence Livermore National Security, Llc Method for making high-density electrical interconnections using rivet bonds
US20130140671A1 (en) * 2011-12-06 2013-06-06 Win Semiconductors Corp. Compound semiconductor integrated circuit with three-dimensionally formed components
TWI473226B (zh) * 2012-01-09 2015-02-11 穩懋半導體股份有限公司 具有三維元件之化合物半導體積體電路
CN103208472B (zh) * 2012-01-12 2016-03-02 稳懋半导体股份有限公司 具有三维元件的复合物半导体集成电路
US9609752B1 (en) 2013-03-15 2017-03-28 Lockheed Martin Corporation Interconnect structure configured to control solder flow and method of manufacturing of same
US9487396B2 (en) * 2014-09-04 2016-11-08 Invensense, Inc. Release chemical protection for integrated complementary metal-oxide-semiconductor (CMOS) and micro-electro-mechanical (MEMS) devices
US9627224B2 (en) * 2015-03-30 2017-04-18 Stmicroelectronics, Inc. Semiconductor device with sloped sidewall and related methods
US11721784B2 (en) 2017-03-30 2023-08-08 Vuereal Inc. High efficient micro devices
CN110709989B (zh) 2017-03-30 2023-12-01 维耶尔公司 垂直固态装置
KR20230139247A (ko) 2022-03-25 2023-10-05 삼성전자주식회사 반도체 패키지 및 그 제조방법

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114826A (en) * 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions
US5773359A (en) * 1995-12-26 1998-06-30 Motorola, Inc. Interconnect system and method of fabrication
US5749997A (en) * 1995-12-27 1998-05-12 Industrial Technology Research Institute Composite bump tape automated bonding method and bonded structure
US5706977A (en) * 1996-03-04 1998-01-13 The Procter & Gamble Company Modular display device
US5736456A (en) * 1996-03-07 1998-04-07 Micron Technology, Inc. Method of forming conductive bumps on die for flip chip applications
US5702977A (en) * 1997-03-03 1997-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Shallow trench isolation method employing self-aligned and planarized trench fill dielectric layer
US6441487B2 (en) * 1997-10-20 2002-08-27 Flip Chip Technologies, L.L.C. Chip scale package using large ductile solder balls
US6251528B1 (en) 1998-01-09 2001-06-26 International Business Machines Corporation Method to plate C4 to copper stud
US6107180A (en) * 1998-01-30 2000-08-22 Motorola, Inc. Method for forming interconnect bumps on a semiconductor die
EP0949672A3 (en) 1998-04-08 2002-09-11 Texas Instruments Incorporated PO Flow for copper metallization
US6268114B1 (en) * 1998-09-18 2001-07-31 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming fine-pitched solder bumps
DE19843624C1 (de) * 1998-09-23 2000-06-15 Siemens Ag Integrierte Schaltungsanordnung und Verfahren zu deren Herstellung
US6130141A (en) * 1998-10-14 2000-10-10 Lucent Technologies Inc. Flip chip metallization
US6500750B1 (en) * 1999-04-05 2002-12-31 Motorola, Inc. Semiconductor device and method of formation
US6251775B1 (en) * 1999-04-23 2001-06-26 International Business Machines Corporation Self-aligned copper silicide formation for improved adhesion/electromigration
US6133136A (en) 1999-05-19 2000-10-17 International Business Machines Corporation Robust interconnect structure
JP4420538B2 (ja) * 1999-07-23 2010-02-24 アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド ウェーハパッケージの製造方法
US6423625B1 (en) * 1999-08-30 2002-07-23 Taiwan Semiconductor Manufacturing Company Ltd. Method of improving the bondability between Au wires and Cu bonding pads
KR100306842B1 (ko) * 1999-09-30 2001-11-02 윤종용 범프 패드에 오목 패턴이 형성된 재배치 웨이퍼 레벨 칩 사이즈 패키지 및 그 제조방법
US6451681B1 (en) * 1999-10-04 2002-09-17 Motorola, Inc. Method of forming copper interconnection utilizing aluminum capping film
JP2001196413A (ja) * 2000-01-12 2001-07-19 Mitsubishi Electric Corp 半導体装置、該半導体装置の製造方法、ｃｍｐ装置、及びｃｍｐ方法
TW441059B (en) * 2000-05-10 2001-06-16 Siliconware Precision Industries Co Ltd Semiconductor package substrate structure
US6294471B1 (en) * 2000-09-27 2001-09-25 Vanguard International Semiconductor Corporation Method of eliminating dishing effect in polishing of dielectric film
US6534396B1 (en) * 2000-10-10 2003-03-18 Taiwan Semiconductor Manufacturing Co., Ltd. Patterned conductor layer pasivation method with dimensionally stabilized planarization
TW449813B (en) 2000-10-13 2001-08-11 Advanced Semiconductor Eng Semiconductor device with bump electrode
KR100370238B1 (ko) * 2000-10-20 2003-01-30 삼성전자 주식회사 반도체 소자의 본드패드 및 그 형성방법
US6542270B2 (en) * 2000-12-08 2003-04-01 Motorola, Inc. Interference-robust coded-modulation scheme for optical communications and method for modulating illumination for optical communications
US6534863B2 (en) * 2001-02-09 2003-03-18 International Business Machines Corporation Common ball-limiting metallurgy for I/O sites
JP2003100744A (ja) * 2001-09-21 2003-04-04 Ricoh Co Ltd 半導体装置及びその製造方法
US20030116845A1 (en) * 2001-12-21 2003-06-26 Bojkov Christo P. Waferlevel method for direct bumping on copper pads in integrated circuits
TW531874B (en) * 2002-04-11 2003-05-11 Taiwan Semiconductor Mfg Method for manufacturing pre-solder bumps of buildup substrate
US6596619B1 (en) * 2002-05-17 2003-07-22 Taiwan Semiconductor Manufacturing Company Method for fabricating an under bump metallization structure
TW557562B (en) * 2002-08-12 2003-10-11 Via Tech Inc Flip chip bonding structure and technology
JP2004281491A (ja) * 2003-03-13 2004-10-07 Toshiba Corp 半導体装置及びその製造方法
US20040232560A1 (en) * 2003-05-22 2004-11-25 Chao-Yuan Su Flip chip assembly process and substrate used therewith
JP2004356453A (ja) * 2003-05-30 2004-12-16 Trecenti Technologies Inc 半導体装置およびその製造方法
US7282433B2 (en) 2005-01-10 2007-10-16 Micron Technology, Inc. Interconnect structures with bond-pads and methods of forming bump sites on bond-pads

Also Published As

Publication number Publication date
EP3220416B1 (en) 2018-10-03
EP1842233A1 (en) 2007-10-10
US20060151880A1 (en) 2006-07-13
TWI387018B (zh) 2013-02-21
US20080032494A1 (en) 2008-02-07
US7528064B2 (en) 2009-05-05
EP1842233B1 (en) 2017-05-24
KR100918129B1 (ko) 2009-09-17
JP2008527727A (ja) 2008-07-24
EP3220416A1 (en) 2017-09-20
WO2006074470A1 (en) 2006-07-13
US7282433B2 (en) 2007-10-16
WO2006074470B1 (en) 2006-11-16
TW200629451A (en) 2006-08-16
US7939948B2 (en) 2011-05-10
US20090179330A1 (en) 2009-07-16
KR20070096016A (ko) 2007-10-01

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