KR100896000B1 - 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법 - Google Patents

포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법 Download PDF

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Publication number
KR100896000B1
KR100896000B1 KR1020020058089A KR20020058089A KR100896000B1 KR 100896000 B1 KR100896000 B1 KR 100896000B1 KR 1020020058089 A KR1020020058089 A KR 1020020058089A KR 20020058089 A KR20020058089 A KR 20020058089A KR 100896000 B1 KR100896000 B1 KR 100896000B1
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KR
South Korea
Prior art keywords
group
resist composition
repeating unit
positive resist
general formula
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Expired - Lifetime
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KR1020020058089A
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English (en)
Korean (ko)
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KR20030051187A (ko
Inventor
사토겐이치로
Original Assignee
후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • H10P76/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020020058089A 2001-09-28 2002-09-25 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법 Expired - Lifetime KR100896000B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00301795 2001-09-28
JP2001301795A JP4149154B2 (ja) 2001-09-28 2001-09-28 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR20030051187A KR20030051187A (ko) 2003-06-25
KR100896000B1 true KR100896000B1 (ko) 2009-05-07

Family

ID=19122152

Family Applications (1)

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KR1020020058089A Expired - Lifetime KR100896000B1 (ko) 2001-09-28 2002-09-25 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법

Country Status (4)

Country Link
US (1) US6787282B2 (enExample)
JP (1) JP4149154B2 (enExample)
KR (1) KR100896000B1 (enExample)
TW (1) TWI248557B (enExample)

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WO2000001684A1 (en) 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
US6844133B2 (en) * 2001-08-31 2005-01-18 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
AU2003289430A1 (en) 2002-12-26 2004-07-22 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
US7338740B2 (en) * 2003-03-27 2008-03-04 Fujifilm Corporation Positive resist composition
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
JP2004333548A (ja) 2003-04-30 2004-11-25 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびレジストパターン形成方法
JP4360836B2 (ja) 2003-06-04 2009-11-11 富士フイルム株式会社 ポジ型レジスト組成物
JP4772288B2 (ja) * 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP4152810B2 (ja) * 2003-06-13 2008-09-17 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
CN100549051C (zh) * 2003-06-26 2009-10-14 捷时雅株式会社 光刻胶聚合物组合物
WO2005003192A1 (en) * 2003-06-26 2005-01-13 Symyx Technologies, Inc. Synthesis of photoresist polymers
JP4411042B2 (ja) * 2003-09-19 2010-02-10 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
JP4188265B2 (ja) * 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4448705B2 (ja) * 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4365236B2 (ja) * 2004-02-20 2009-11-18 富士フイルム株式会社 液浸露光用レジスト組成物及びそれを用いたパターン形成方法
JP4347130B2 (ja) 2004-04-28 2009-10-21 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法及びイオンインプランテーション方法
JP2006208546A (ja) * 2005-01-26 2006-08-10 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法
TWI430030B (zh) * 2005-11-08 2014-03-11 Fujifilm Corp 正型光阻組成物及使用此正型光阻組成物之圖案形成方法
JP4668048B2 (ja) * 2005-12-02 2011-04-13 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4288518B2 (ja) * 2006-07-28 2009-07-01 信越化学工業株式会社 ラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
JP4839253B2 (ja) * 2007-03-28 2011-12-21 富士フイルム株式会社 ポジ型レジスト組成物およびパターン形成方法
JP5233995B2 (ja) 2007-06-05 2013-07-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP5806800B2 (ja) * 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5655563B2 (ja) * 2010-12-28 2015-01-21 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法
RU2692678C1 (ru) * 2019-01-30 2019-06-26 Общество с ограниченной ответственностью "Поликетон" Фоторезистивная композиция высокочувствительного позитивного электронорезиста

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990036486A (ko) * 1997-10-09 1999-05-25 아끼구사 나오유끼 레지스트 재료 및 레지스트 패턴의 형성방법
JPH11292822A (ja) * 1998-04-06 1999-10-26 Nec Corp １，２−ジオール構造を有する脂環式（メタ）アクリレート誘導体、およびその重合体
JP2000026446A (ja) * 1998-07-03 2000-01-25 Nec Corp ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
KR20000077438A (ko) * 1999-05-26 2000-12-26 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR20010029715A (ko) * 1999-05-07 2001-04-16 무네유키 가코우 포지티브-작용 포토레지스트 조성물
JP2001142212A (ja) * 1999-11-11 2001-05-25 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
KR20010050290A (ko) * 1999-09-01 2001-06-15 고지마 아끼로, 오가와 다이스께 4-옥사트리시클로[4.3.1.1(3,8)]운데칸-5-온 유도체 및그의 제조 방법
US6280898B1 (en) * 1998-09-25 2001-08-28 Shin-Etsu Chemical Co., Ltd. Lactone-containing compounds, polymers, resist compositions, and patterning method

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JP2741540B2 (ja) 1989-07-10 1998-04-22 キヤノン株式会社 カラー画像形成装置
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3380128B2 (ja) 1996-11-29 2003-02-24 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3948795B2 (ja) 1997-09-30 2007-07-25 ダイセル化学工業株式会社 放射線感光材料及びそれを用いたパターン形成方法
JP3963602B2 (ja) * 1999-01-27 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP2001215703A (ja) * 2000-02-01 2001-08-10 Daicel Chem Ind Ltd フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
TW573225B (en) * 2000-02-28 2004-01-21 Sumitomo Chemical Co Chemically amplified positive resist composition
US6703178B2 (en) * 2002-05-28 2004-03-09 Everlight Usa, Inc. Chemical amplified photoresist compositions

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990036486A (ko) * 1997-10-09 1999-05-25 아끼구사 나오유끼 레지스트 재료 및 레지스트 패턴의 형성방법
JPH11292822A (ja) * 1998-04-06 1999-10-26 Nec Corp １，２−ジオール構造を有する脂環式（メタ）アクリレート誘導体、およびその重合体
JP2000026446A (ja) * 1998-07-03 2000-01-25 Nec Corp ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
US6280898B1 (en) * 1998-09-25 2001-08-28 Shin-Etsu Chemical Co., Ltd. Lactone-containing compounds, polymers, resist compositions, and patterning method
KR20010029715A (ko) * 1999-05-07 2001-04-16 무네유키 가코우 포지티브-작용 포토레지스트 조성물
KR20000077438A (ko) * 1999-05-26 2000-12-26 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR20010050290A (ko) * 1999-09-01 2001-06-15 고지마 아끼로, 오가와 다이스께 4-옥사트리시클로[4.3.1.1(3,8)]운데칸-5-온 유도체 및그의 제조 방법
JP2001142212A (ja) * 1999-11-11 2001-05-25 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物

Also Published As

Publication number Publication date
JP2003107710A (ja) 2003-04-09
KR20030051187A (ko) 2003-06-25
JP4149154B2 (ja) 2008-09-10
TWI248557B (en) 2006-02-01
US6787282B2 (en) 2004-09-07
US20030108809A1 (en) 2003-06-12

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