JP4149154B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4149154B2
JP4149154B2 JP2001301795A JP2001301795A JP4149154B2 JP 4149154 B2 JP4149154 B2 JP 4149154B2 JP 2001301795 A JP2001301795 A JP 2001301795A JP 2001301795 A JP2001301795 A JP 2001301795A JP 4149154 B2 JP4149154 B2 JP 4149154B2
Authority
JP
Japan
Prior art keywords
group
general formula
alkyl group
carbon atoms
alicyclic hydrocarbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001301795A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003107710A5 (enExample
JP2003107710A (ja
Inventor
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001301795A priority Critical patent/JP4149154B2/ja
Priority to KR1020020058089A priority patent/KR100896000B1/ko
Priority to US10/253,484 priority patent/US6787282B2/en
Priority to TW091122424A priority patent/TWI248557B/zh
Publication of JP2003107710A publication Critical patent/JP2003107710A/ja
Publication of JP2003107710A5 publication Critical patent/JP2003107710A5/ja
Application granted granted Critical
Publication of JP4149154B2 publication Critical patent/JP4149154B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2001301795A 2001-09-28 2001-09-28 ポジ型レジスト組成物 Expired - Fee Related JP4149154B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001301795A JP4149154B2 (ja) 2001-09-28 2001-09-28 ポジ型レジスト組成物
KR1020020058089A KR100896000B1 (ko) 2001-09-28 2002-09-25 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법
US10/253,484 US6787282B2 (en) 2001-09-28 2002-09-25 Positive resist composition
TW091122424A TWI248557B (en) 2001-09-28 2002-09-27 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001301795A JP4149154B2 (ja) 2001-09-28 2001-09-28 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003107710A JP2003107710A (ja) 2003-04-09
JP2003107710A5 JP2003107710A5 (enExample) 2006-01-19
JP4149154B2 true JP4149154B2 (ja) 2008-09-10

Family

ID=19122152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001301795A Expired - Fee Related JP4149154B2 (ja) 2001-09-28 2001-09-28 ポジ型レジスト組成物

Country Status (4)

Country Link
US (1) US6787282B2 (enExample)
JP (1) JP4149154B2 (enExample)
KR (1) KR100896000B1 (enExample)
TW (1) TWI248557B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000001684A1 (en) 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
US6844133B2 (en) * 2001-08-31 2005-01-18 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
WO2004059392A1 (ja) 2002-12-26 2004-07-15 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法
US7338740B2 (en) * 2003-03-27 2008-03-04 Fujifilm Corporation Positive resist composition
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
JP2004333548A (ja) 2003-04-30 2004-11-25 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびレジストパターン形成方法
JP4360836B2 (ja) 2003-06-04 2009-11-11 富士フイルム株式会社 ポジ型レジスト組成物
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP4152810B2 (ja) * 2003-06-13 2008-09-17 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US7250475B2 (en) * 2003-06-26 2007-07-31 Symyx Technologies, Inc. Synthesis of photoresist polymers
CN100549051C (zh) * 2003-06-26 2009-10-14 捷时雅株式会社 光刻胶聚合物组合物
JP4411042B2 (ja) * 2003-09-19 2010-02-10 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
JP4188265B2 (ja) * 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4448705B2 (ja) * 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4365236B2 (ja) * 2004-02-20 2009-11-18 富士フイルム株式会社 液浸露光用レジスト組成物及びそれを用いたパターン形成方法
JP4347130B2 (ja) 2004-04-28 2009-10-21 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法及びイオンインプランテーション方法
JP2006208546A (ja) * 2005-01-26 2006-08-10 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法
TWI430030B (zh) * 2005-11-08 2014-03-11 Fujifilm Corp 正型光阻組成物及使用此正型光阻組成物之圖案形成方法
JP4668048B2 (ja) * 2005-12-02 2011-04-13 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4288518B2 (ja) * 2006-07-28 2009-07-01 信越化学工業株式会社 ラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
JP4839253B2 (ja) * 2007-03-28 2011-12-21 富士フイルム株式会社 ポジ型レジスト組成物およびパターン形成方法
WO2008149701A1 (ja) * 2007-06-05 2008-12-11 Jsr Corporation 感放射線性樹脂組成物
JP5806800B2 (ja) * 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5655563B2 (ja) * 2010-12-28 2015-01-21 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法
RU2692678C1 (ru) * 2019-01-30 2019-06-26 Общество с ограниченной ответственностью "Поликетон" Фоторезистивная композиция высокочувствительного позитивного электронорезиста

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2741540B2 (ja) 1989-07-10 1998-04-22 キヤノン株式会社 カラー画像形成装置
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3380128B2 (ja) 1996-11-29 2003-02-24 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3948795B2 (ja) 1997-09-30 2007-07-25 ダイセル化学工業株式会社 放射線感光材料及びそれを用いたパターン形成方法
JP3676918B2 (ja) 1997-10-09 2005-07-27 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3237605B2 (ja) * 1998-04-06 2001-12-10 日本電気株式会社 １，２−ジオール構造を有する脂環式（メタ）アクリレート誘導体、およびその重合体
JP3042618B2 (ja) * 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
JP3963602B2 (ja) * 1999-01-27 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6596458B1 (en) * 1999-05-07 2003-07-22 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP4562829B2 (ja) * 1999-09-01 2010-10-13 ダイセル化学工業株式会社 ４−オキサトリシクロ［４．３．１．１３，８］ウンデカン−５−オン誘導体
JP3948506B2 (ja) * 1999-11-11 2007-07-25 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP2001215703A (ja) * 2000-02-01 2001-08-10 Daicel Chem Ind Ltd フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
TW573225B (en) * 2000-02-28 2004-01-21 Sumitomo Chemical Co Chemically amplified positive resist composition
US6703178B2 (en) * 2002-05-28 2004-03-09 Everlight Usa, Inc. Chemical amplified photoresist compositions

Also Published As

Publication number Publication date
US20030108809A1 (en) 2003-06-12
TWI248557B (en) 2006-02-01
JP2003107710A (ja) 2003-04-09
KR100896000B1 (ko) 2009-05-07
US6787282B2 (en) 2004-09-07
KR20030051187A (ko) 2003-06-25

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