KR100891133B1 - 전자선 또는 엑스선용 네거티브 레지스트 조성물 - Google Patents

전자선 또는 엑스선용 네거티브 레지스트 조성물 Download PDF

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Publication number
KR100891133B1
KR100891133B1 KR1020020015120A KR20020015120A KR100891133B1 KR 100891133 B1 KR100891133 B1 KR 100891133B1 KR 1020020015120 A KR1020020015120 A KR 1020020015120A KR 20020015120 A KR20020015120 A KR 20020015120A KR 100891133 B1 KR100891133 B1 KR 100891133B1
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KR
South Korea
Prior art keywords
group
compound
resin
resist composition
alkyl
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Expired - Fee Related
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KR1020020015120A
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English (en)
Korean (ko)
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KR20020075264A (ko
Inventor
야스나미쇼이치로
시라카와코지
아데가와유타카
Original Assignee
후지필름 가부시키가이샤
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Publication of KR20020075264A publication Critical patent/KR20020075264A/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020020015120A 2001-03-21 2002-03-20 전자선 또는 엑스선용 네거티브 레지스트 조성물 Expired - Fee Related KR100891133B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001080858A JP4092083B2 (ja) 2001-03-21 2001-03-21 電子線又はｘ線用ネガ型レジスト組成物
JPJP-P-2001-00080858 2001-03-21

Publications (2)

Publication Number Publication Date
KR20020075264A KR20020075264A (ko) 2002-10-04
KR100891133B1 true KR100891133B1 (ko) 2009-04-06

Family

ID=18937063

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020015120A Expired - Fee Related KR100891133B1 (ko) 2001-03-21 2002-03-20 전자선 또는 엑스선용 네거티브 레지스트 조성물

Country Status (4)

Country Link
US (1) US6887647B2 (enExample)
JP (1) JP4092083B2 (enExample)
KR (1) KR100891133B1 (enExample)
TW (1) TWI251121B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872504B2 (en) * 2002-12-10 2005-03-29 Massachusetts Institute Of Technology High sensitivity X-ray photoresist
US20100178611A1 (en) * 2006-04-13 2010-07-15 Nuflare Technology, Inc. Lithography method of electron beam
US20080241745A1 (en) * 2007-03-29 2008-10-02 Fujifilm Corporation Negative resist composition and pattern forming method using the same
JP4678383B2 (ja) * 2007-03-29 2011-04-27 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
JP4958821B2 (ja) * 2007-03-29 2012-06-20 富士フイルム株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP5537920B2 (ja) * 2009-03-26 2014-07-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法
JP2011059531A (ja) * 2009-09-11 2011-03-24 Jsr Corp 感放射線性樹脂組成物及びパターン形成方法
CN102781911B (zh) 2010-02-24 2015-07-22 巴斯夫欧洲公司 潜酸及其用途
JP6010564B2 (ja) 2014-01-10 2016-10-19 信越化学工業株式会社 化学増幅型ネガ型レジスト組成物及びパターン形成方法
JP7702806B2 (ja) * 2020-05-15 2025-07-04 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5595855A (en) * 1994-02-25 1997-01-21 Hoechst Japan Limited Radiation sensitive composition
JPH11125907A (ja) * 1997-08-18 1999-05-11 Jsr Corp 感放射線性樹脂組成物
US6136500A (en) * 1997-08-18 2000-10-24 Jsr Corporation Radiation sensitive resin composition
KR20000077062A (ko) * 1999-04-28 2000-12-26 무네유키 가코우 네거티브 전자선 또는 엑스선 레지스트 조성물
KR20000076961A (ko) * 1999-03-26 2000-12-26 카나가와 치히로 레지스트 재료 및 패턴 형성 방법
KR20010021256A (ko) * 1999-08-11 2001-03-15 무네유키 가코우 네거티브 레지스트 조성물
JP2001066779A (ja) * 1999-08-30 2001-03-16 Fuji Photo Film Co Ltd ポジ型感光性組成物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3506817B2 (ja) 1995-07-26 2004-03-15 クラリアント インターナショナル リミテッド 放射線感応性組成物
US6291129B1 (en) * 1997-08-29 2001-09-18 Kabushiki Kaisha Toshiba Monomer, high molecular compound and photosensitive composition

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5595855A (en) * 1994-02-25 1997-01-21 Hoechst Japan Limited Radiation sensitive composition
JPH11125907A (ja) * 1997-08-18 1999-05-11 Jsr Corp 感放射線性樹脂組成物
US6136500A (en) * 1997-08-18 2000-10-24 Jsr Corporation Radiation sensitive resin composition
KR20000076961A (ko) * 1999-03-26 2000-12-26 카나가와 치히로 레지스트 재료 및 패턴 형성 방법
KR20000077062A (ko) * 1999-04-28 2000-12-26 무네유키 가코우 네거티브 전자선 또는 엑스선 레지스트 조성물
KR20010021256A (ko) * 1999-08-11 2001-03-15 무네유키 가코우 네거티브 레지스트 조성물
JP2001066779A (ja) * 1999-08-30 2001-03-16 Fuji Photo Film Co Ltd ポジ型感光性組成物

Also Published As

Publication number Publication date
JP4092083B2 (ja) 2008-05-28
KR20020075264A (ko) 2002-10-04
TWI251121B (en) 2006-03-11
US20020192592A1 (en) 2002-12-19
US6887647B2 (en) 2005-05-03
JP2002278068A (ja) 2002-09-27

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