JP4092083B2 - 電子線又はｘ線用ネガ型レジスト組成物 - Google Patents

電子線又はｘ線用ネガ型レジスト組成物 Download PDF

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Publication number
JP4092083B2
JP4092083B2 JP2001080858A JP2001080858A JP4092083B2 JP 4092083 B2 JP4092083 B2 JP 4092083B2 JP 2001080858 A JP2001080858 A JP 2001080858A JP 2001080858 A JP2001080858 A JP 2001080858A JP 4092083 B2 JP4092083 B2 JP 4092083B2
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Japan
Prior art keywords
group
electron beam
ray
substituent
resin
Prior art date
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Expired - Fee Related
Application number
JP2001080858A
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English (en)
Japanese (ja)
Other versions
JP2002278068A5 (enExample
JP2002278068A (ja
Inventor
昭一郎 安波
浩司 白川
豊 阿出川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001080858A priority Critical patent/JP4092083B2/ja
Priority to TW091105074A priority patent/TWI251121B/zh
Priority to US10/101,178 priority patent/US6887647B2/en
Priority to KR1020020015120A priority patent/KR100891133B1/ko
Publication of JP2002278068A publication Critical patent/JP2002278068A/ja
Publication of JP2002278068A5 publication Critical patent/JP2002278068A5/ja
Application granted granted Critical
Publication of JP4092083B2 publication Critical patent/JP4092083B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2001080858A 2001-03-21 2001-03-21 電子線又はｘ線用ネガ型レジスト組成物 Expired - Fee Related JP4092083B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001080858A JP4092083B2 (ja) 2001-03-21 2001-03-21 電子線又はｘ線用ネガ型レジスト組成物
TW091105074A TWI251121B (en) 2001-03-21 2002-03-18 Negative-working resist composition for electron beams or X-rays
US10/101,178 US6887647B2 (en) 2001-03-21 2002-03-20 Negative-working resist composition for electron beams or x-rays
KR1020020015120A KR100891133B1 (ko) 2001-03-21 2002-03-20 전자선 또는 엑스선용 네거티브 레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001080858A JP4092083B2 (ja) 2001-03-21 2001-03-21 電子線又はｘ線用ネガ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2002278068A JP2002278068A (ja) 2002-09-27
JP2002278068A5 JP2002278068A5 (enExample) 2006-01-19
JP4092083B2 true JP4092083B2 (ja) 2008-05-28

Family

ID=18937063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001080858A Expired - Fee Related JP4092083B2 (ja) 2001-03-21 2001-03-21 電子線又はｘ線用ネガ型レジスト組成物

Country Status (4)

Country Link
US (1) US6887647B2 (enExample)
JP (1) JP4092083B2 (enExample)
KR (1) KR100891133B1 (enExample)
TW (1) TWI251121B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872504B2 (en) * 2002-12-10 2005-03-29 Massachusetts Institute Of Technology High sensitivity X-ray photoresist
US20100178611A1 (en) * 2006-04-13 2010-07-15 Nuflare Technology, Inc. Lithography method of electron beam
US20080241745A1 (en) * 2007-03-29 2008-10-02 Fujifilm Corporation Negative resist composition and pattern forming method using the same
JP4678383B2 (ja) * 2007-03-29 2011-04-27 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
JP4958821B2 (ja) * 2007-03-29 2012-06-20 富士フイルム株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP5537920B2 (ja) * 2009-03-26 2014-07-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法
JP2011059531A (ja) * 2009-09-11 2011-03-24 Jsr Corp 感放射線性樹脂組成物及びパターン形成方法
CN102781911B (zh) 2010-02-24 2015-07-22 巴斯夫欧洲公司 潜酸及其用途
JP6010564B2 (ja) 2014-01-10 2016-10-19 信越化学工業株式会社 化学増幅型ネガ型レジスト組成物及びパターン形成方法
JP7702806B2 (ja) * 2020-05-15 2025-07-04 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3573358B2 (ja) * 1994-02-25 2004-10-06 クラリアント インターナショナル リミテッド 放射線感応性組成物
JP3506817B2 (ja) 1995-07-26 2004-03-15 クラリアント インターナショナル リミテッド 放射線感応性組成物
KR100551653B1 (ko) * 1997-08-18 2006-05-25 제이에스알 가부시끼가이샤 감방사선성수지조성물
JP3991462B2 (ja) * 1997-08-18 2007-10-17 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6291129B1 (en) * 1997-08-29 2001-09-18 Kabushiki Kaisha Toshiba Monomer, high molecular compound and photosensitive composition
US6455223B1 (en) * 1999-03-26 2002-09-24 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
JP2000310857A (ja) * 1999-04-28 2000-11-07 Fuji Photo Film Co Ltd ネガ型電子線又はｘ線レジスト組成物
JP3929653B2 (ja) * 1999-08-11 2007-06-13 富士フイルム株式会社 ネガ型レジスト組成物
JP3982958B2 (ja) * 1999-08-30 2007-09-26 富士フイルム株式会社 ポジ型感光性組成物

Also Published As

Publication number Publication date
KR20020075264A (ko) 2002-10-04
TWI251121B (en) 2006-03-11
KR100891133B1 (ko) 2009-04-06
US20020192592A1 (en) 2002-12-19
US6887647B2 (en) 2005-05-03
JP2002278068A (ja) 2002-09-27

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