JP2002278068A5 - - Google Patents
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- Publication number
- JP2002278068A5 JP2002278068A5 JP2001080858A JP2001080858A JP2002278068A5 JP 2002278068 A5 JP2002278068 A5 JP 2002278068A5 JP 2001080858 A JP2001080858 A JP 2001080858A JP 2001080858 A JP2001080858 A JP 2001080858A JP 2002278068 A5 JP2002278068 A5 JP 2002278068A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- electron beam
- resin
- ray
- resist composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 4
- 125000003710 aryl alkyl group Chemical group 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 125000004450 alkenylene group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 125000000732 arylene group Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 125000002993 cycloalkylene group Chemical group 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 0 CC(*(C)(C1)CC1C(C)(C)C)N Chemical compound CC(*(C)(C1)CC1C(C)(C)C)N 0.000 description 1
- 150000007945 N-acyl ureas Chemical group 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005196 alkyl carbonyloxy group Chemical group 0.000 description 1
- 125000005278 alkyl sulfonyloxy group Chemical group 0.000 description 1
- 150000001408 amides Chemical group 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 150000002148 esters Chemical group 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001080858A JP4092083B2 (ja) | 2001-03-21 | 2001-03-21 | 電子線又はｘ線用ネガ型レジスト組成物 |
| TW091105074A TWI251121B (en) | 2001-03-21 | 2002-03-18 | Negative-working resist composition for electron beams or X-rays |
| US10/101,178 US6887647B2 (en) | 2001-03-21 | 2002-03-20 | Negative-working resist composition for electron beams or x-rays |
| KR1020020015120A KR100891133B1 (ko) | 2001-03-21 | 2002-03-20 | 전자선 또는 엑스선용 네거티브 레지스트 조성물 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001080858A JP4092083B2 (ja) | 2001-03-21 | 2001-03-21 | 電子線又はｘ線用ネガ型レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002278068A JP2002278068A (ja) | 2002-09-27 |
| JP2002278068A5 true JP2002278068A5 (enExample) | 2006-01-19 |
| JP4092083B2 JP4092083B2 (ja) | 2008-05-28 |
Family
ID=18937063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001080858A Expired - Fee Related JP4092083B2 (ja) | 2001-03-21 | 2001-03-21 | 電子線又はｘ線用ネガ型レジスト組成物 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6887647B2 (enExample) |
| JP (1) | JP4092083B2 (enExample) |
| KR (1) | KR100891133B1 (enExample) |
| TW (1) | TWI251121B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6872504B2 (en) * | 2002-12-10 | 2005-03-29 | Massachusetts Institute Of Technology | High sensitivity X-ray photoresist |
| US20100178611A1 (en) * | 2006-04-13 | 2010-07-15 | Nuflare Technology, Inc. | Lithography method of electron beam |
| US20080241745A1 (en) * | 2007-03-29 | 2008-10-02 | Fujifilm Corporation | Negative resist composition and pattern forming method using the same |
| JP4678383B2 (ja) * | 2007-03-29 | 2011-04-27 | 信越化学工業株式会社 | 化学増幅ネガ型レジスト組成物及びパターン形成方法 |
| JP4958821B2 (ja) * | 2007-03-29 | 2012-06-20 | 富士フイルム株式会社 | ネガ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP5537920B2 (ja) * | 2009-03-26 | 2014-07-02 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法 |
| JP2011059531A (ja) * | 2009-09-11 | 2011-03-24 | Jsr Corp | 感放射線性樹脂組成物及びパターン形成方法 |
| CN102781911B (zh) | 2010-02-24 | 2015-07-22 | 巴斯夫欧洲公司 | 潜酸及其用途 |
| JP6010564B2 (ja) | 2014-01-10 | 2016-10-19 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト組成物及びパターン形成方法 |
| JP7702806B2 (ja) * | 2020-05-15 | 2025-07-04 | 住友化学株式会社 | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3573358B2 (ja) * | 1994-02-25 | 2004-10-06 | クラリアント インターナショナル リミテッド | 放射線感応性組成物 |
| JP3506817B2 (ja) | 1995-07-26 | 2004-03-15 | クラリアント インターナショナル リミテッド | 放射線感応性組成物 |
| KR100551653B1 (ko) * | 1997-08-18 | 2006-05-25 | 제이에스알 가부시끼가이샤 | 감방사선성수지조성물 |
| JP3991462B2 (ja) * | 1997-08-18 | 2007-10-17 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| US6291129B1 (en) * | 1997-08-29 | 2001-09-18 | Kabushiki Kaisha Toshiba | Monomer, high molecular compound and photosensitive composition |
| US6455223B1 (en) * | 1999-03-26 | 2002-09-24 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
| JP2000310857A (ja) * | 1999-04-28 | 2000-11-07 | Fuji Photo Film Co Ltd | ネガ型電子線又はｘ線レジスト組成物 |
| JP3929653B2 (ja) * | 1999-08-11 | 2007-06-13 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
| JP3982958B2 (ja) * | 1999-08-30 | 2007-09-26 | 富士フイルム株式会社 | ポジ型感光性組成物 |
-
2001
- 2001-03-21 JP JP2001080858A patent/JP4092083B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-18 TW TW091105074A patent/TWI251121B/zh not_active IP Right Cessation
- 2002-03-20 KR KR1020020015120A patent/KR100891133B1/ko not_active Expired - Fee Related
- 2002-03-20 US US10/101,178 patent/US6887647B2/en not_active Expired - Fee Related