JP2001356484A5 - - Google Patents
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- Publication number
- JP2001356484A5 JP2001356484A5 JP2000178538A JP2000178538A JP2001356484A5 JP 2001356484 A5 JP2001356484 A5 JP 2001356484A5 JP 2000178538 A JP2000178538 A JP 2000178538A JP 2000178538 A JP2000178538 A JP 2000178538A JP 2001356484 A5 JP2001356484 A5 JP 2001356484A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- following general
- polymer
- resist layer
- general formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229920000642 polymer Polymers 0.000 description 10
- 239000002253 acid Substances 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- 125000001424 substituent group Chemical group 0.000 description 6
- 125000005647 linker group Chemical group 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- -1 nitrogen-containing basic compound Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 125000005389 trialkylsiloxy group Chemical group 0.000 description 1
- 125000004665 trialkylsilyl group Chemical group 0.000 description 1
- 125000004953 trihalomethyl group Chemical group 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000178538A JP4253423B2 (ja) | 2000-06-14 | 2000-06-14 | ポジ型レジスト積層物 |
| US09/880,030 US6696219B2 (en) | 2000-06-14 | 2001-06-14 | Positive resist laminate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000178538A JP4253423B2 (ja) | 2000-06-14 | 2000-06-14 | ポジ型レジスト積層物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001356484A JP2001356484A (ja) | 2001-12-26 |
| JP2001356484A5 true JP2001356484A5 (enExample) | 2006-01-12 |
| JP4253423B2 JP4253423B2 (ja) | 2009-04-15 |
Family
ID=18679949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000178538A Expired - Fee Related JP4253423B2 (ja) | 2000-06-14 | 2000-06-14 | ポジ型レジスト積層物 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6696219B2 (enExample) |
| JP (1) | JP4253423B2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW565746B (en) * | 1999-10-29 | 2003-12-11 | Fuji Photo Film Co Ltd | Positive-type photoresist composition |
| US6444408B1 (en) * | 2000-02-28 | 2002-09-03 | International Business Machines Corporation | High silicon content monomers and polymers suitable for 193 nm bilayer resists |
| JP2003112321A (ja) * | 2001-10-02 | 2003-04-15 | Sony Corp | 加工用マスター基材及び同マスター基材の製造方法 |
| US7534498B2 (en) * | 2002-06-03 | 2009-05-19 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
| JP4565804B2 (ja) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
| JP3850772B2 (ja) * | 2002-08-21 | 2006-11-29 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法 |
| US6770419B2 (en) * | 2002-09-11 | 2004-08-03 | International Business Machines Corporation | Low silicon-outgassing resist for bilayer lithography |
| TWI295410B (en) * | 2002-11-29 | 2008-04-01 | Zeon Corp | Radiation-sensitive resin composition |
| US20050074688A1 (en) * | 2003-10-03 | 2005-04-07 | Toukhy Medhat A. | Bottom antireflective coatings |
| KR20070029157A (ko) * | 2004-03-12 | 2007-03-13 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 리소그래피 적용을 위한 열경화된 언더코트 |
| JP4872183B2 (ja) * | 2004-03-19 | 2012-02-08 | Ｊｓｒ株式会社 | 環状オレフィン系樹脂組成物、その成形品の処理方法、およびフィルムまたはシート |
| US7927778B2 (en) * | 2004-12-29 | 2011-04-19 | Tokyo Ohka Kogyo Co., Ltd. | Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal |
| US7951522B2 (en) * | 2004-12-29 | 2011-05-31 | Tokyo Ohka Kogyo Co., Ltd. | Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal |
| US20070231736A1 (en) * | 2006-03-28 | 2007-10-04 | Chen Kuang-Jung J | Bottom antireflective coating composition and method for use thereof |
| US20080014532A1 (en) * | 2006-07-14 | 2008-01-17 | 3M Innovative Properties Company | Laminate body, and method for manufacturing thin substrate using the laminate body |
| US8153346B2 (en) * | 2007-02-23 | 2012-04-10 | Fujifilm Electronic Materials, U.S.A., Inc. | Thermally cured underlayer for lithographic application |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2793251B2 (ja) | 1989-05-09 | 1998-09-03 | 株式会社東芝 | パターン形成方法 |
| JP2980149B2 (ja) | 1993-09-24 | 1999-11-22 | 富士通株式会社 | レジスト材料およびパターン形成方法 |
| JP3203995B2 (ja) * | 1993-12-24 | 2001-09-04 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
| JPH0862834A (ja) * | 1994-08-22 | 1996-03-08 | Mitsubishi Chem Corp | フォトレジスト組成物 |
| US6187504B1 (en) * | 1996-12-19 | 2001-02-13 | Jsr Corporation | Radiation sensitive resin composition |
| KR100230417B1 (ko) | 1997-04-10 | 1999-11-15 | 윤종용 | 실리콘을 함유하는 화학증폭형 레지스트 조성물 |
| US6159656A (en) * | 1998-06-26 | 2000-12-12 | Fuji Photo Film Co., Ltd. | Positive photosensitive resin |
| US20020102483A1 (en) * | 1998-09-15 | 2002-08-01 | Timothy Adams | Antireflective coating compositions |
| US6323287B1 (en) | 1999-03-12 | 2001-11-27 | Arch Specialty Chemicals, Inc. | Hydroxy-amino thermally cured undercoat for 193 NM lithography |
| US6165682A (en) * | 1999-09-22 | 2000-12-26 | Arch Specialty Chemicals, Inc. | Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof |
| JP2001125272A (ja) * | 1999-10-28 | 2001-05-11 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| US6444408B1 (en) * | 2000-02-28 | 2002-09-03 | International Business Machines Corporation | High silicon content monomers and polymers suitable for 193 nm bilayer resists |
-
2000
- 2000-06-14 JP JP2000178538A patent/JP4253423B2/ja not_active Expired - Fee Related
-
2001
- 2001-06-14 US US09/880,030 patent/US6696219B2/en not_active Expired - Lifetime