JP4253423B2 - ポジ型レジスト積層物 - Google Patents

ポジ型レジスト積層物 Download PDF

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Publication number
JP4253423B2
JP4253423B2 JP2000178538A JP2000178538A JP4253423B2 JP 4253423 B2 JP4253423 B2 JP 4253423B2 JP 2000178538 A JP2000178538 A JP 2000178538A JP 2000178538 A JP2000178538 A JP 2000178538A JP 4253423 B2 JP4253423 B2 JP 4253423B2
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JP
Japan
Prior art keywords
group
acid
polymer
general formula
repeating unit
Prior art date
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Expired - Fee Related
Application number
JP2000178538A
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English (en)
Japanese (ja)
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JP2001356484A5 (enExample
JP2001356484A (ja
Inventor
昭一郎 安波
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2000178538A priority Critical patent/JP4253423B2/ja
Priority to US09/880,030 priority patent/US6696219B2/en
Publication of JP2001356484A publication Critical patent/JP2001356484A/ja
Publication of JP2001356484A5 publication Critical patent/JP2001356484A5/ja
Application granted granted Critical
Publication of JP4253423B2 publication Critical patent/JP4253423B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2000178538A 2000-06-14 2000-06-14 ポジ型レジスト積層物 Expired - Fee Related JP4253423B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000178538A JP4253423B2 (ja) 2000-06-14 2000-06-14 ポジ型レジスト積層物
US09/880,030 US6696219B2 (en) 2000-06-14 2001-06-14 Positive resist laminate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000178538A JP4253423B2 (ja) 2000-06-14 2000-06-14 ポジ型レジスト積層物

Publications (3)

Publication Number Publication Date
JP2001356484A JP2001356484A (ja) 2001-12-26
JP2001356484A5 JP2001356484A5 (enExample) 2006-01-12
JP4253423B2 true JP4253423B2 (ja) 2009-04-15

Family

ID=18679949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000178538A Expired - Fee Related JP4253423B2 (ja) 2000-06-14 2000-06-14 ポジ型レジスト積層物

Country Status (2)

Country Link
US (1) US6696219B2 (enExample)
JP (1) JP4253423B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW565746B (en) * 1999-10-29 2003-12-11 Fuji Photo Film Co Ltd Positive-type photoresist composition
US6444408B1 (en) * 2000-02-28 2002-09-03 International Business Machines Corporation High silicon content monomers and polymers suitable for 193 nm bilayer resists
JP2003112321A (ja) * 2001-10-02 2003-04-15 Sony Corp 加工用マスター基材及び同マスター基材の製造方法
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
JP3850772B2 (ja) * 2002-08-21 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法
US6770419B2 (en) * 2002-09-11 2004-08-03 International Business Machines Corporation Low silicon-outgassing resist for bilayer lithography
TWI295410B (en) * 2002-11-29 2008-04-01 Zeon Corp Radiation-sensitive resin composition
US20050074688A1 (en) * 2003-10-03 2005-04-07 Toukhy Medhat A. Bottom antireflective coatings
KR20070029157A (ko) * 2004-03-12 2007-03-13 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 리소그래피 적용을 위한 열경화된 언더코트
JP4872183B2 (ja) * 2004-03-19 2012-02-08 Ｊｓｒ株式会社 環状オレフィン系樹脂組成物、その成形品の処理方法、およびフィルムまたはシート
US7927778B2 (en) * 2004-12-29 2011-04-19 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
US7951522B2 (en) * 2004-12-29 2011-05-31 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
US20070231736A1 (en) * 2006-03-28 2007-10-04 Chen Kuang-Jung J Bottom antireflective coating composition and method for use thereof
US20080014532A1 (en) * 2006-07-14 2008-01-17 3M Innovative Properties Company Laminate body, and method for manufacturing thin substrate using the laminate body
US8153346B2 (en) * 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2793251B2 (ja) 1989-05-09 1998-09-03 株式会社東芝 パターン形成方法
JP2980149B2 (ja) 1993-09-24 1999-11-22 富士通株式会社 レジスト材料およびパターン形成方法
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
JPH0862834A (ja) * 1994-08-22 1996-03-08 Mitsubishi Chem Corp フォトレジスト組成物
US6187504B1 (en) * 1996-12-19 2001-02-13 Jsr Corporation Radiation sensitive resin composition
KR100230417B1 (ko) 1997-04-10 1999-11-15 윤종용 실리콘을 함유하는 화학증폭형 레지스트 조성물
US6159656A (en) * 1998-06-26 2000-12-12 Fuji Photo Film Co., Ltd. Positive photosensitive resin
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
US6323287B1 (en) 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
US6165682A (en) * 1999-09-22 2000-12-26 Arch Specialty Chemicals, Inc. Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof
JP2001125272A (ja) * 1999-10-28 2001-05-11 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US6444408B1 (en) * 2000-02-28 2002-09-03 International Business Machines Corporation High silicon content monomers and polymers suitable for 193 nm bilayer resists

Also Published As

Publication number Publication date
JP2001356484A (ja) 2001-12-26
US6696219B2 (en) 2004-02-24
US20020028409A1 (en) 2002-03-07

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