JP2004334107A5 - - Google Patents
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- Publication number
- JP2004334107A5 JP2004334107A5 JP2003133194A JP2003133194A JP2004334107A5 JP 2004334107 A5 JP2004334107 A5 JP 2004334107A5 JP 2003133194 A JP2003133194 A JP 2003133194A JP 2003133194 A JP2003133194 A JP 2003133194A JP 2004334107 A5 JP2004334107 A5 JP 2004334107A5
- Authority
- JP
- Japan
- Prior art keywords
- resist composition
- group
- acid
- positive resist
- composition according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002253 acid Substances 0.000 description 3
- -1 Polysiloxane Polymers 0.000 description 2
- 150000007514 bases Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 125000005647 linker group Chemical group 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 125000002993 cycloalkylene group Chemical group 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003133194A JP4262516B2 (ja) | 2003-05-12 | 2003-05-12 | ポジ型レジスト組成物 |
| US10/840,624 US7217493B2 (en) | 2003-05-12 | 2004-05-07 | Positive resist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003133194A JP4262516B2 (ja) | 2003-05-12 | 2003-05-12 | ポジ型レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004334107A JP2004334107A (ja) | 2004-11-25 |
| JP2004334107A5 true JP2004334107A5 (enExample) | 2006-06-29 |
| JP4262516B2 JP4262516B2 (ja) | 2009-05-13 |
Family
ID=33410641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003133194A Expired - Fee Related JP4262516B2 (ja) | 2003-05-12 | 2003-05-12 | ポジ型レジスト組成物 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7217493B2 (enExample) |
| JP (1) | JP4262516B2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7833690B2 (en) * | 2001-11-05 | 2010-11-16 | The University Of North Carolina At Charlotte | Photoacid generators and lithographic resists comprising the same |
| JP4494060B2 (ja) * | 2004-03-30 | 2010-06-30 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
| JP4494061B2 (ja) * | 2004-03-30 | 2010-06-30 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
| US7318992B2 (en) * | 2004-03-31 | 2008-01-15 | Tokyo Ohka Kogyo Co., Ltd. | Lift-off positive resist composition |
| US7320855B2 (en) * | 2004-11-03 | 2008-01-22 | International Business Machines Corporation | Silicon containing TARC/barrier layer |
| JP2007133185A (ja) | 2005-11-10 | 2007-05-31 | Tokyo Ohka Kogyo Co Ltd | 感光性樹脂組成物及びパターン形成方法 |
| JP2007225647A (ja) | 2006-02-21 | 2007-09-06 | Tokyo Ohka Kogyo Co Ltd | 超臨界現像プロセス用レジスト組成物 |
| TWI391781B (zh) * | 2007-11-19 | 2013-04-01 | Tokyo Ohka Kogyo Co Ltd | 光阻組成物，光阻圖型之形成方法，新穎化合物及酸產生劑 |
| JP2009286980A (ja) * | 2008-06-02 | 2009-12-10 | Nissan Chem Ind Ltd | アルカリ可溶性樹脂及び感光性樹脂組成物 |
| US8685616B2 (en) * | 2008-06-10 | 2014-04-01 | University Of North Carolina At Charlotte | Photoacid generators and lithographic resists comprising the same |
| JP2014065864A (ja) * | 2012-09-27 | 2014-04-17 | Dic Corp | ポリシロキサン樹脂組成物、表示装置及び半導体デバイス |
| KR102307208B1 (ko) * | 2012-10-31 | 2021-10-01 | 닛산 가가쿠 가부시키가이샤 | 에스테르기를 갖는 실리콘함유 레지스트 하층막 형성조성물 |
| WO2015122293A1 (ja) * | 2014-02-13 | 2015-08-20 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機ｅｌ表示装置、タッチパネル表示装置 |
| KR20160095879A (ko) * | 2015-02-04 | 2016-08-12 | 동우 화인켐 주식회사 | 감광성 수지 조성물, 이로 형성되는 광경화 패턴 및 이를 포함하는 화상 표시 장치 |
| JP6826361B2 (ja) * | 2015-05-13 | 2021-02-03 | 東京応化工業株式会社 | 絶縁膜形成用感光性組成物、及び絶縁膜パターンの形成方法 |
| JP7101932B2 (ja) * | 2017-03-23 | 2022-07-19 | Jsr株式会社 | Ｅｕｖリソグラフィー用ケイ素含有膜形成組成物、ｅｕｖリソグラフィー用ケイ素含有膜及びパターン形成方法 |
| CN112180682A (zh) * | 2020-08-14 | 2021-01-05 | 陕西彩虹新材料有限公司 | 一种表面性能优越的正性光刻胶添加剂 |
| KR102515739B1 (ko) * | 2022-12-07 | 2023-03-30 | 타코마테크놀러지 주식회사 | 감광성 수지 및 이를 포함하는 포토레지스트 조성물 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5338818A (en) | 1992-09-10 | 1994-08-16 | International Business Machines Corporation | Silicon containing positive resist for DUV lithography |
| JP3235388B2 (ja) | 1994-12-09 | 2001-12-04 | 信越化学工業株式会社 | ポジ型レジスト材料 |
| JP3518158B2 (ja) | 1996-04-02 | 2004-04-12 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
| JP4557328B2 (ja) * | 1999-02-01 | 2010-10-06 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
| JP2001109150A (ja) | 1999-10-05 | 2001-04-20 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| TW565746B (en) * | 1999-10-29 | 2003-12-11 | Fuji Photo Film Co Ltd | Positive-type photoresist composition |
| JP3967051B2 (ja) | 1999-11-22 | 2007-08-29 | 富士フイルム株式会社 | ポジ型レジスト積層物 |
| US6531260B2 (en) * | 2000-04-07 | 2003-03-11 | Jsr Corporation | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition |
| JP4235344B2 (ja) | 2000-05-22 | 2009-03-11 | 富士フイルム株式会社 | ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法 |
| JP4217369B2 (ja) | 2000-06-22 | 2009-01-28 | 富士フイルム株式会社 | ２層レジスト |
| US6420084B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Mask-making using resist having SIO bond-containing polymer |
| JP3826777B2 (ja) * | 2001-12-05 | 2006-09-27 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| US6939664B2 (en) * | 2003-10-24 | 2005-09-06 | International Business Machines Corporation | Low-activation energy silicon-containing resist system |
| US20050106494A1 (en) * | 2003-11-19 | 2005-05-19 | International Business Machines Corporation | Silicon-containing resist systems with cyclic ketal protecting groups |
-
2003
- 2003-05-12 JP JP2003133194A patent/JP4262516B2/ja not_active Expired - Fee Related
-
2004
- 2004-05-07 US US10/840,624 patent/US7217493B2/en not_active Expired - Lifetime
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