JP2003270791A5 - - Google Patents

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Publication number
JP2003270791A5
JP2003270791A5 JP2002074565A JP2002074565A JP2003270791A5 JP 2003270791 A5 JP2003270791 A5 JP 2003270791A5 JP 2002074565 A JP2002074565 A JP 2002074565A JP 2002074565 A JP2002074565 A JP 2002074565A JP 2003270791 A5 JP2003270791 A5 JP 2003270791A5
Authority
JP
Japan
Prior art keywords
acid
hydroxyl groups
resist film
alkali
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002074565A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003270791A (ja
JP4025102B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002074565A priority Critical patent/JP4025102B2/ja
Priority claimed from JP2002074565A external-priority patent/JP4025102B2/ja
Priority to KR1020030016097A priority patent/KR100933911B1/ko
Priority to US10/388,408 priority patent/US7235341B2/en
Priority to EP03006122A priority patent/EP1347335A1/en
Publication of JP2003270791A publication Critical patent/JP2003270791A/ja
Publication of JP2003270791A5 publication Critical patent/JP2003270791A5/ja
Application granted granted Critical
Publication of JP4025102B2 publication Critical patent/JP4025102B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002074565A 2002-03-18 2002-03-18 ポジ型レジスト組成物 Expired - Fee Related JP4025102B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002074565A JP4025102B2 (ja) 2002-03-18 2002-03-18 ポジ型レジスト組成物
KR1020030016097A KR100933911B1 (ko) 2002-03-18 2003-03-14 포지티브 레지스트 조성물
US10/388,408 US7235341B2 (en) 2002-03-18 2003-03-17 Positive resist composition
EP03006122A EP1347335A1 (en) 2002-03-18 2003-03-18 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002074565A JP4025102B2 (ja) 2002-03-18 2002-03-18 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003270791A JP2003270791A (ja) 2003-09-25
JP2003270791A5 true JP2003270791A5 (enExample) 2005-04-07
JP4025102B2 JP4025102B2 (ja) 2007-12-19

Family

ID=27785159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002074565A Expired - Fee Related JP4025102B2 (ja) 2002-03-18 2002-03-18 ポジ型レジスト組成物

Country Status (4)

Country Link
US (1) US7235341B2 (enExample)
EP (1) EP1347335A1 (enExample)
JP (1) JP4025102B2 (enExample)
KR (1) KR100933911B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1465010B1 (en) * 2003-03-31 2009-10-21 FUJIFILM Corporation Positive resist composition
US7906268B2 (en) 2004-03-18 2011-03-15 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4279237B2 (ja) * 2004-05-28 2009-06-17 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP4740666B2 (ja) * 2004-07-07 2011-08-03 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
EP1621927B1 (en) 2004-07-07 2018-05-23 FUJIFILM Corporation Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4524154B2 (ja) 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
JP4511383B2 (ja) 2005-02-23 2010-07-28 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7622240B2 (en) 2005-02-28 2009-11-24 International Business Machines Corporation Low blur molecular resist
US7615329B2 (en) * 2006-03-02 2009-11-10 Intel Corporation Branching self-assembling photoresist with decomposable backbone
US20110269071A1 (en) * 2010-04-28 2011-11-03 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, chemical amplification resist composition, and resist film and pattern forming method using the composition
US8932799B2 (en) * 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369095A (en) * 1990-02-14 1994-11-29 Alcon Laboratories, Inc. Compositions and method comprising substituted glycosides as mucus membrane permeation enhancers
JPH07225480A (ja) 1993-11-10 1995-08-22 Hitachi Ltd パタン形成材料及びそれを用いたパタン形成方法
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
EP0877294A4 (en) * 1996-01-26 1999-09-29 Nippon Zeon Co COMPOSITION OF RESIST
JP3692595B2 (ja) 1996-02-16 2005-09-07 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6071670A (en) * 1996-10-11 2000-06-06 Kabushiki Kaisha Toshiba Transparent resin, photosensitive composition, and method of forming a pattern
WO2000001684A1 (en) * 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
KR20000076585A (ko) * 1999-02-02 2000-12-26 미우라 아끼라 방사선 민감성 수지 조성물
JP4480835B2 (ja) 1999-02-12 2010-06-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポジ型感放射線性樹脂組成物
ATE384035T1 (de) * 1999-04-01 2008-02-15 Esperion Therapeutics Inc Ether-verbindungen, zusammensetzungen und ihre verwendung
JP2001083709A (ja) 1999-09-09 2001-03-30 Fuji Photo Film Co Ltd ポジ型感放射線性樹脂組成物
JP3755571B2 (ja) 1999-11-12 2006-03-15 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
EP1136885B1 (en) 2000-03-22 2007-05-09 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and patterning method
JP2002006492A (ja) * 2000-06-09 2002-01-09 Shipley Co Llc 感放射線性樹脂組成物
JP4460727B2 (ja) 2000-06-27 2010-05-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 感放射線性樹脂組成物

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