JP4025102B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

Info

Publication number
JP4025102B2
JP4025102B2 JP2002074565A JP2002074565A JP4025102B2 JP 4025102 B2 JP4025102 B2 JP 4025102B2 JP 2002074565 A JP2002074565 A JP 2002074565A JP 2002074565 A JP2002074565 A JP 2002074565A JP 4025102 B2 JP4025102 B2 JP 4025102B2
Authority
JP
Japan
Prior art keywords
group
carbon atoms
alicyclic hydrocarbon
resist composition
examples
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002074565A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003270791A (ja
JP2003270791A5 (enExample
Inventor
亨 藤森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002074565A priority Critical patent/JP4025102B2/ja
Priority to KR1020030016097A priority patent/KR100933911B1/ko
Priority to US10/388,408 priority patent/US7235341B2/en
Priority to EP03006122A priority patent/EP1347335A1/en
Publication of JP2003270791A publication Critical patent/JP2003270791A/ja
Publication of JP2003270791A5 publication Critical patent/JP2003270791A5/ja
Application granted granted Critical
Publication of JP4025102B2 publication Critical patent/JP4025102B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002074565A 2002-03-18 2002-03-18 ポジ型レジスト組成物 Expired - Fee Related JP4025102B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002074565A JP4025102B2 (ja) 2002-03-18 2002-03-18 ポジ型レジスト組成物
KR1020030016097A KR100933911B1 (ko) 2002-03-18 2003-03-14 포지티브 레지스트 조성물
US10/388,408 US7235341B2 (en) 2002-03-18 2003-03-17 Positive resist composition
EP03006122A EP1347335A1 (en) 2002-03-18 2003-03-18 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002074565A JP4025102B2 (ja) 2002-03-18 2002-03-18 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003270791A JP2003270791A (ja) 2003-09-25
JP2003270791A5 JP2003270791A5 (enExample) 2005-04-07
JP4025102B2 true JP4025102B2 (ja) 2007-12-19

Family

ID=27785159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002074565A Expired - Fee Related JP4025102B2 (ja) 2002-03-18 2002-03-18 ポジ型レジスト組成物

Country Status (4)

Country Link
US (1) US7235341B2 (enExample)
EP (1) EP1347335A1 (enExample)
JP (1) JP4025102B2 (enExample)
KR (1) KR100933911B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1465010B1 (en) * 2003-03-31 2009-10-21 FUJIFILM Corporation Positive resist composition
US7906268B2 (en) 2004-03-18 2011-03-15 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4279237B2 (ja) * 2004-05-28 2009-06-17 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP4740666B2 (ja) * 2004-07-07 2011-08-03 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
EP1621927B1 (en) 2004-07-07 2018-05-23 FUJIFILM Corporation Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4524154B2 (ja) 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
JP4511383B2 (ja) 2005-02-23 2010-07-28 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7622240B2 (en) 2005-02-28 2009-11-24 International Business Machines Corporation Low blur molecular resist
US7615329B2 (en) * 2006-03-02 2009-11-10 Intel Corporation Branching self-assembling photoresist with decomposable backbone
US20110269071A1 (en) * 2010-04-28 2011-11-03 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, chemical amplification resist composition, and resist film and pattern forming method using the composition
US8932799B2 (en) * 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369095A (en) * 1990-02-14 1994-11-29 Alcon Laboratories, Inc. Compositions and method comprising substituted glycosides as mucus membrane permeation enhancers
JPH07225480A (ja) 1993-11-10 1995-08-22 Hitachi Ltd パタン形成材料及びそれを用いたパタン形成方法
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
EP0877294A4 (en) * 1996-01-26 1999-09-29 Nippon Zeon Co COMPOSITION OF RESIST
JP3692595B2 (ja) 1996-02-16 2005-09-07 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6071670A (en) * 1996-10-11 2000-06-06 Kabushiki Kaisha Toshiba Transparent resin, photosensitive composition, and method of forming a pattern
WO2000001684A1 (en) * 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
KR20000076585A (ko) * 1999-02-02 2000-12-26 미우라 아끼라 방사선 민감성 수지 조성물
JP4480835B2 (ja) 1999-02-12 2010-06-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポジ型感放射線性樹脂組成物
ATE384035T1 (de) * 1999-04-01 2008-02-15 Esperion Therapeutics Inc Ether-verbindungen, zusammensetzungen und ihre verwendung
JP2001083709A (ja) 1999-09-09 2001-03-30 Fuji Photo Film Co Ltd ポジ型感放射線性樹脂組成物
JP3755571B2 (ja) 1999-11-12 2006-03-15 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
EP1136885B1 (en) 2000-03-22 2007-05-09 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and patterning method
JP2002006492A (ja) * 2000-06-09 2002-01-09 Shipley Co Llc 感放射線性樹脂組成物
JP4460727B2 (ja) 2000-06-27 2010-05-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 感放射線性樹脂組成物

Also Published As

Publication number Publication date
EP1347335A1 (en) 2003-09-24
US20030224287A1 (en) 2003-12-04
KR100933911B1 (ko) 2009-12-28
KR20040002461A (ko) 2004-01-07
JP2003270791A (ja) 2003-09-25
US7235341B2 (en) 2007-06-26

Similar Documents

Publication Publication Date Title
JP4083053B2 (ja) ポジ型レジスト組成物
JP4025074B2 (ja) ポジ型レジスト組成物
JP4411042B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4360957B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4612999B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4025102B2 (ja) ポジ型レジスト組成物
JP3907167B2 (ja) ポジ型レジスト組成物
JP2005077738A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4621806B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
KR101049070B1 (ko) 포지티브 레지스트 조성물 및 이것을 사용한 패턴형성방법
JP4313965B2 (ja) ポジ型感光性組成物
JP4360955B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4226808B2 (ja) ポジ型レジスト組成物
JP2003149815A (ja) ポジ型レジスト組成物
JP4048535B2 (ja) ポジ型レジスト組成物
JP2004045856A (ja) ポジ型レジスト組成物
JP4712077B2 (ja) ポジ型感光性組成物
JP2003122010A (ja) ポジ型レジスト組成物
JP2005025150A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4324496B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4190168B2 (ja) ポジ型感光性組成物
JP4705975B2 (ja) ポジ型感光性組成物
JP4070642B2 (ja) ポジ型レジスト組成物
JP2004279576A (ja) ポジ型レジスト組成物
JP2005099275A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040527

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040527

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060324

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060404

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060412

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060606

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060823

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061012

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061124

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070926

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071004

R150 Certificate of patent or registration of utility model

Ref document number: 4025102

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101012

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111012

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121012

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121012

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131012

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees