KR100933911B1 - 포지티브 레지스트 조성물 - Google Patents

포지티브 레지스트 조성물 Download PDF

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Publication number
KR100933911B1
KR100933911B1 KR1020030016097A KR20030016097A KR100933911B1 KR 100933911 B1 KR100933911 B1 KR 100933911B1 KR 1020030016097 A KR1020030016097 A KR 1020030016097A KR 20030016097 A KR20030016097 A KR 20030016097A KR 100933911 B1 KR100933911 B1 KR 100933911B1
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KR
South Korea
Prior art keywords
group
substituted
unsubstituted
atom
resin
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Expired - Fee Related
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KR1020030016097A
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English (en)
Korean (ko)
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KR20040002461A (ko
Inventor
후지모리토루
Original Assignee
후지필름 가부시키가이샤
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020030016097A 2002-03-18 2003-03-14 포지티브 레지스트 조성물 Expired - Fee Related KR100933911B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002074565A JP4025102B2 (ja) 2002-03-18 2002-03-18 ポジ型レジスト組成物
JPJP-P-2002-00074565 2002-03-18

Publications (2)

Publication Number Publication Date
KR20040002461A KR20040002461A (ko) 2004-01-07
KR100933911B1 true KR100933911B1 (ko) 2009-12-28

Family

ID=27785159

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030016097A Expired - Fee Related KR100933911B1 (ko) 2002-03-18 2003-03-14 포지티브 레지스트 조성물

Country Status (4)

Country Link
US (1) US7235341B2 (enExample)
EP (1) EP1347335A1 (enExample)
JP (1) JP4025102B2 (enExample)
KR (1) KR100933911B1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE446530T1 (de) * 2003-03-31 2009-11-15 Fujifilm Corp Positiv arbeitende resistzusammensetzung
US7906268B2 (en) 2004-03-18 2011-03-15 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4279237B2 (ja) * 2004-05-28 2009-06-17 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
EP1621927B1 (en) 2004-07-07 2018-05-23 FUJIFILM Corporation Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4740666B2 (ja) * 2004-07-07 2011-08-03 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4524154B2 (ja) 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
JP4511383B2 (ja) 2005-02-23 2010-07-28 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7622240B2 (en) * 2005-02-28 2009-11-24 International Business Machines Corporation Low blur molecular resist
US7615329B2 (en) * 2006-03-02 2009-11-10 Intel Corporation Branching self-assembling photoresist with decomposable backbone
US20110269071A1 (en) * 2010-04-28 2011-11-03 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, chemical amplification resist composition, and resist film and pattern forming method using the composition
US8932799B2 (en) * 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000076585A (ko) * 1999-02-02 2000-12-26 미우라 아끼라 방사선 민감성 수지 조성물
JP2002006492A (ja) * 2000-06-09 2002-01-09 Shipley Co Llc 感放射線性樹脂組成物

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US5369095A (en) * 1990-02-14 1994-11-29 Alcon Laboratories, Inc. Compositions and method comprising substituted glycosides as mucus membrane permeation enhancers
JPH07225480A (ja) 1993-11-10 1995-08-22 Hitachi Ltd パタン形成材料及びそれを用いたパタン形成方法
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
KR19990076735A (ko) * 1996-01-26 1999-10-15 나카노 카쯔히코 레지스트 조성물
JP3692595B2 (ja) 1996-02-16 2005-09-07 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6071670A (en) * 1996-10-11 2000-06-06 Kabushiki Kaisha Toshiba Transparent resin, photosensitive composition, and method of forming a pattern
KR100382960B1 (ko) * 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
JP4480835B2 (ja) 1999-02-12 2010-06-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポジ型感放射線性樹脂組成物
BR0009520A (pt) * 1999-04-01 2002-06-11 Esperion Therapeutics Inc Composto, método para sintetizar o mesmo, composição, metódos para o tratramento ou prevenção, em um paciente, de doença cardiovascular, dislipidemia, dislipoproteinemia, distúrbio de metabolismo de glucose, doença de alzheimer, sìndrome x ou sìndrome metabólica, septicemia, distúrbio trombótico, distúrbio associado com receptor ativado por proliferador de peroxissoma, obesidade, pancreatite, hipertensão, doença renal, câncer, inflamação, impotência, para reduzir o teor de gordura de carne de gado bovino, e, para reduzir o teor de colesterol de ovos de aves
JP2001083709A (ja) 1999-09-09 2001-03-30 Fuji Photo Film Co Ltd ポジ型感放射線性樹脂組成物
JP3755571B2 (ja) 1999-11-12 2006-03-15 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
TWI228203B (en) 2000-03-22 2005-02-21 Shinetsu Chemical Co Chemical amplification positive resist material and method for forming pattern
JP4460727B2 (ja) 2000-06-27 2010-05-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 感放射線性樹脂組成物

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
KR20000076585A (ko) * 1999-02-02 2000-12-26 미우라 아끼라 방사선 민감성 수지 조성물
JP2002006492A (ja) * 2000-06-09 2002-01-09 Shipley Co Llc 感放射線性樹脂組成物

Also Published As

Publication number Publication date
US20030224287A1 (en) 2003-12-04
KR20040002461A (ko) 2004-01-07
JP4025102B2 (ja) 2007-12-19
EP1347335A1 (en) 2003-09-24
JP2003270791A (ja) 2003-09-25
US7235341B2 (en) 2007-06-26

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