JP2002303980A5 - - Google Patents
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- Publication number
- JP2002303980A5 JP2002303980A5 JP2001108627A JP2001108627A JP2002303980A5 JP 2002303980 A5 JP2002303980 A5 JP 2002303980A5 JP 2001108627 A JP2001108627 A JP 2001108627A JP 2001108627 A JP2001108627 A JP 2001108627A JP 2002303980 A5 JP2002303980 A5 JP 2002303980A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- alicyclic hydrocarbon
- photoresist composition
- positive photoresist
- composition according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 125000002723 alicyclic group Chemical group 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- -1 sulfonate compound Chemical class 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001108627A JP4255100B2 (ja) | 2001-04-06 | 2001-04-06 | ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 |
| TW091106854A TWI298116B (en) | 2001-04-06 | 2002-04-04 | Positive photoresist composition |
| KR1020020018519A KR100885691B1 (ko) | 2001-04-06 | 2002-04-04 | 포지티브 포토레지스트 조성물 및 패턴형성방법 |
| US10/116,137 US6692884B2 (en) | 2001-04-06 | 2002-04-05 | Positive photoresist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001108627A JP4255100B2 (ja) | 2001-04-06 | 2001-04-06 | ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002303980A JP2002303980A (ja) | 2002-10-18 |
| JP2002303980A5 true JP2002303980A5 (enExample) | 2006-01-19 |
| JP4255100B2 JP4255100B2 (ja) | 2009-04-15 |
Family
ID=18960727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001108627A Expired - Fee Related JP4255100B2 (ja) | 2001-04-06 | 2001-04-06 | ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6692884B2 (enExample) |
| JP (1) | JP4255100B2 (enExample) |
| KR (1) | KR100885691B1 (enExample) |
| TW (1) | TWI298116B (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2809829B1 (fr) * | 2000-06-05 | 2002-07-26 | Rhodia Chimie Sa | Nouvelle composition photosensible pour la fabrication de photoresist |
| KR100795109B1 (ko) * | 2001-02-23 | 2008-01-17 | 후지필름 가부시키가이샤 | 포지티브 감광성 조성물 |
| TW565748B (en) * | 2001-05-17 | 2003-12-11 | Fuji Photo Film Co Ltd | Positive radiation-sensitive composition |
| US7510822B2 (en) * | 2002-04-10 | 2009-03-31 | Fujifilm Corporation | Stimulation sensitive composition and compound |
| JP4281326B2 (ja) * | 2002-07-25 | 2009-06-17 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| JP4067359B2 (ja) * | 2002-08-08 | 2008-03-26 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JP3986927B2 (ja) * | 2002-08-22 | 2007-10-03 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2004233953A (ja) * | 2002-12-02 | 2004-08-19 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物 |
| JP4434762B2 (ja) * | 2003-01-31 | 2010-03-17 | 東京応化工業株式会社 | レジスト組成物 |
| TWI308993B (en) * | 2003-02-25 | 2009-04-21 | Tokyo Ohka Kogyo Co Ltd | Photoresist composition and method of forming the same |
| JP2005099646A (ja) | 2003-03-28 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法 |
| JP4083053B2 (ja) * | 2003-03-31 | 2008-04-30 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| US20050058933A1 (en) * | 2003-09-17 | 2005-03-17 | Meagley Robert P. | Quantum efficient photoacid generators for photolithographic processes |
| US7427463B2 (en) * | 2003-10-14 | 2008-09-23 | Intel Corporation | Photoresists with reduced outgassing for extreme ultraviolet lithography |
| JP4365235B2 (ja) * | 2004-02-20 | 2009-11-18 | 富士フイルム株式会社 | 液浸露光用レジスト組成物及びそれを用いたパターン形成方法 |
| KR100574495B1 (ko) * | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
| JP4687878B2 (ja) * | 2005-05-27 | 2011-05-25 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| KR100833706B1 (ko) | 2007-02-01 | 2008-05-29 | 삼성전자주식회사 | 감광성 폴리이미드 조성물, 폴리이미드 필름 및 이를 이용한 반도체 소자 |
| US7803521B2 (en) * | 2007-11-19 | 2010-09-28 | International Business Machines Corporation | Photoresist compositions and process for multiple exposures with multiple layer photoresist systems |
| CN109991811A (zh) * | 2019-02-27 | 2019-07-09 | 江苏南大光电材料股份有限公司 | 一种酸扩散抑制剂及其制备方法与光刻胶组合物 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0792680A (ja) * | 1993-06-29 | 1995-04-07 | Nippon Zeon Co Ltd | レジスト組成物 |
| JP3297272B2 (ja) | 1995-07-14 | 2002-07-02 | 富士通株式会社 | レジスト組成物及びレジストパターンの形成方法 |
| JP3751065B2 (ja) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
| JP3712218B2 (ja) | 1997-01-24 | 2005-11-02 | 東京応化工業株式会社 | 化学増幅型ホトレジスト組成物 |
| JP3546679B2 (ja) | 1997-01-29 | 2004-07-28 | 住友化学工業株式会社 | 化学増幅型ポジ型レジスト組成物 |
| JP3832780B2 (ja) | 1997-02-27 | 2006-10-11 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
| JP3902835B2 (ja) * | 1997-06-27 | 2007-04-11 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
| JP3847454B2 (ja) * | 1998-03-20 | 2006-11-22 | 富士写真フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法 |
| TWI232855B (en) * | 1998-05-19 | 2005-05-21 | Jsr Corp | Diazodisulfone compound and radiation-sensitive resin composition |
| JP3642228B2 (ja) * | 1999-05-19 | 2005-04-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| US6787283B1 (en) * | 1999-07-22 | 2004-09-07 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for far ultraviolet exposure |
| CN1210623C (zh) * | 2000-04-04 | 2005-07-13 | 住友化学工业株式会社 | 化学放大型正光刻胶组合物 |
| TWI286664B (en) * | 2000-06-23 | 2007-09-11 | Sumitomo Chemical Co | Chemical amplification type positive resist composition and sulfonium salt |
| TW538056B (en) * | 2000-07-11 | 2003-06-21 | Samsung Electronics Co Ltd | Resist composition comprising photosensitive polymer having lactone in its backbone |
| EP1179750B1 (en) * | 2000-08-08 | 2012-07-25 | FUJIFILM Corporation | Positive photosensitive composition and method for producing a precision integrated circuit element using the same |
| KR100750267B1 (ko) * | 2001-04-03 | 2007-08-17 | 후지필름 가부시키가이샤 | 포지티브 포토레지스트 조성물 |
-
2001
- 2001-04-06 JP JP2001108627A patent/JP4255100B2/ja not_active Expired - Fee Related
-
2002
- 2002-04-04 KR KR1020020018519A patent/KR100885691B1/ko not_active Expired - Fee Related
- 2002-04-04 TW TW091106854A patent/TWI298116B/zh not_active IP Right Cessation
- 2002-04-05 US US10/116,137 patent/US6692884B2/en not_active Expired - Lifetime