TWI298116B - Positive photoresist composition - Google Patents

Positive photoresist composition Download PDF

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Publication number
TWI298116B
TWI298116B TW091106854A TW91106854A TWI298116B TW I298116 B TWI298116 B TW I298116B TW 091106854 A TW091106854 A TW 091106854A TW 91106854 A TW91106854 A TW 91106854A TW I298116 B TWI298116 B TW I298116B
Authority
TW
Taiwan
Prior art keywords
group
compound
positive
alkyl
photoresist composition
Prior art date
Application number
TW091106854A
Other languages
English (en)
Chinese (zh)
Inventor
Toru Fujimori
Kunihiko Kodama
Kenichiro Sato
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of TWI298116B publication Critical patent/TWI298116B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • H10P76/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW091106854A 2001-04-06 2002-04-04 Positive photoresist composition TWI298116B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001108627A JP4255100B2 (ja) 2001-04-06 2001-04-06 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法

Publications (1)

Publication Number Publication Date
TWI298116B true TWI298116B (en) 2008-06-21

Family

ID=18960727

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091106854A TWI298116B (en) 2001-04-06 2002-04-04 Positive photoresist composition

Country Status (4)

Country Link
US (1) US6692884B2 (enExample)
JP (1) JP4255100B2 (enExample)
KR (1) KR100885691B1 (enExample)
TW (1) TWI298116B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2809829B1 (fr) * 2000-06-05 2002-07-26 Rhodia Chimie Sa Nouvelle composition photosensible pour la fabrication de photoresist
KR100795109B1 (ko) * 2001-02-23 2008-01-17 후지필름 가부시키가이샤 포지티브 감광성 조성물
TW565748B (en) * 2001-05-17 2003-12-11 Fuji Photo Film Co Ltd Positive radiation-sensitive composition
US7510822B2 (en) * 2002-04-10 2009-03-31 Fujifilm Corporation Stimulation sensitive composition and compound
JP4281326B2 (ja) * 2002-07-25 2009-06-17 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4067359B2 (ja) * 2002-08-08 2008-03-26 富士フイルム株式会社 ポジ型レジスト組成物
JP3986927B2 (ja) * 2002-08-22 2007-10-03 富士通株式会社 半導体装置の製造方法
JP2004233953A (ja) * 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP4434762B2 (ja) * 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
KR20050098957A (ko) * 2003-02-25 2005-10-12 도오꾜오까고오교 가부시끼가이샤 포토레지스트 조성물 및 레지스트 패턴의 형성 방법
JP2005099646A (ja) 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
US20050058933A1 (en) * 2003-09-17 2005-03-17 Meagley Robert P. Quantum efficient photoacid generators for photolithographic processes
US7427463B2 (en) * 2003-10-14 2008-09-23 Intel Corporation Photoresists with reduced outgassing for extreme ultraviolet lithography
JP4365235B2 (ja) * 2004-02-20 2009-11-18 富士フイルム株式会社 液浸露光用レジスト組成物及びそれを用いたパターン形成方法
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
JP4687878B2 (ja) * 2005-05-27 2011-05-25 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
KR100833706B1 (ko) 2007-02-01 2008-05-29 삼성전자주식회사 감광성 폴리이미드 조성물, 폴리이미드 필름 및 이를 이용한 반도체 소자
US7803521B2 (en) * 2007-11-19 2010-09-28 International Business Machines Corporation Photoresist compositions and process for multiple exposures with multiple layer photoresist systems
CN109991811A (zh) * 2019-02-27 2019-07-09 江苏南大光电材料股份有限公司 一种酸扩散抑制剂及其制备方法与光刻胶组合物

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792680A (ja) * 1993-06-29 1995-04-07 Nippon Zeon Co Ltd レジスト組成物
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3712218B2 (ja) 1997-01-24 2005-11-02 東京応化工業株式会社 化学増幅型ホトレジスト組成物
JP3546679B2 (ja) 1997-01-29 2004-07-28 住友化学工業株式会社 化学増幅型ポジ型レジスト組成物
JP3832780B2 (ja) 1997-02-27 2006-10-11 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3902835B2 (ja) * 1997-06-27 2007-04-11 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3847454B2 (ja) * 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
TWI232855B (en) * 1998-05-19 2005-05-21 Jsr Corp Diazodisulfone compound and radiation-sensitive resin composition
JP3642228B2 (ja) * 1999-05-19 2005-04-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
US6787283B1 (en) * 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
CN1210623C (zh) * 2000-04-04 2005-07-13 住友化学工业株式会社 化学放大型正光刻胶组合物
TWI286664B (en) * 2000-06-23 2007-09-11 Sumitomo Chemical Co Chemical amplification type positive resist composition and sulfonium salt
TW538056B (en) * 2000-07-11 2003-06-21 Samsung Electronics Co Ltd Resist composition comprising photosensitive polymer having lactone in its backbone
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
KR100750267B1 (ko) * 2001-04-03 2007-08-17 후지필름 가부시키가이샤 포지티브 포토레지스트 조성물

Also Published As

Publication number Publication date
JP2002303980A (ja) 2002-10-18
KR100885691B1 (ko) 2009-02-26
US20030044715A1 (en) 2003-03-06
KR20020079483A (ko) 2002-10-19
JP4255100B2 (ja) 2009-04-15
US6692884B2 (en) 2004-02-17

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