KR100869296B1 - 압전 박막 디바이스의 제조 방법 - Google Patents
압전 박막 디바이스의 제조 방법 Download PDFInfo
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- KR100869296B1 KR100869296B1 KR20070018726A KR20070018726A KR100869296B1 KR 100869296 B1 KR100869296 B1 KR 100869296B1 KR 20070018726 A KR20070018726 A KR 20070018726A KR 20070018726 A KR20070018726 A KR 20070018726A KR 100869296 B1 KR100869296 B1 KR 100869296B1
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- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02039—Characteristics of piezoelectric layers, e.g. cutting angles consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
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- H03H9/02047—Treatment of substrates
- H03H9/02055—Treatment of substrates of the surface including the back surface
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
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- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
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- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (9)
- 단수 또는 복수의 압전 박막 공진자를 포함하는 압전 박막 디바이스의 제조 방법으로서,압전체 기판을 포함하는 소정의 부재를 제작하는 제작 공정;상기 부재를 지지체에 접착하는 접착 공정; 및상기 부재를 상기 지지체에 접착한 상태를 유지한 채로 상기 압전체 기판을 제거 가공함으로써 압전체 박막을 얻는 제거 가공 공정을 포함하는 것을 특징으로 하는 압전 박막 디바이스의 제조 방법.
- 제1항에 있어서, 상기 제거 가공 공정은 상기 압전체 기판을 연삭 가공하는 연삭 가공 공정을 포함하는 것을 특징으로 하는 압전 박막 디바이스의 제조 방법.
- 제1항에 있어서, 상기 제거 가공 공정은 상기 압전체 기판을 연마 가공하는 연마 가공 공정을 포함하는 것을 특징으로 하는 압전 박막 디바이스의 제조 방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 접착 공정은 접착제에 의해 상기 부재를 상기 지지체에 접착하는 것을 특징으로 하는 압전 박막 디바이스의 제조 방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 제작 공정은 상기 압전체 박막의 여진 영역을 상기 지지체로부터 이격시키는 막을, 상기 압전체 박막에 있어서 비여진 영역이 되는 상기 압전체 기판의 소정 영역에 형성하는 막 형성 공정을 포함하는 것을 특징으로 하는 압전 박막 디바이스의 제조 방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 제작 공정은 상기 압전체 박막의 여진 영역을 상기 지지체로부터 이격시키는 함몰부를, 상기 압전체 박막에 있어서 여진 영역이 되는 상기 압전체 기판의 소정 영역에 형성하는 함몰부 형성 공정을 포함하는 것을 특징으로 하는 압전 박막 디바이스의 제조 방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 접착 공정에 앞서 상기 압전체 박막의 여진 영역을 상기 지지체로부터 이격시키는 함몰부를, 상기 압전체 박막의 여진 영역과 대향하는 상기 지지체의 소정 영역에 형성하는 함몰부 형성 공정을 포함하는 것을 특징으로 하는 압전 박막 디바이스의 제조 방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 압전체 박막의 열팽창율이 상기 지지체의 열팽창율과 동일한 것을 특징으로 하는 압전 박막 디바이스의 제조 방법.
- 단수 또는 복수의 압전 박막 공진자를 포함하는 압전 박막 디바이스의 제조 방법으로서,압전체 기판을 포함하는 소정의 부재를 제작하는 제작 공정;상기 부재를 지지체에 접착하는 접착 공정; 및상기 부재를 상기 지지체에 접착한 상태를 유지한 채로 상기 압전체 기판을 제거 가공함으로써 압전체 박막을 얻는 제거 가공 공정을 포함하고,상기 제거 가공 공정은 연삭 또는 연마 가공 공정이고,상기 접착 공정은 접착제에 의해 상기 부재를 상기 지지체에 접착하고,상기 제작 공정은 상기 압전체 박막의 여진 영역을 상기 지지체로부터 이격시키는 막을, 상기 압전체 박막에 있어서 비여진 영역이 되는 상기 압전체 기판의 소정 영역에 형성하는 막 형성 공정을 포함하고,상기 압전체 박막의 열팽창율이 상기 지지체의 열팽창율과 동일한 것을 특징으로 하는 압전 박막 디바이스의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2006-00047821 | 2006-02-24 | ||
JP2006047821A JP4627269B2 (ja) | 2006-02-24 | 2006-02-24 | 圧電薄膜デバイスの製造方法 |
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KR20070088396A KR20070088396A (ko) | 2007-08-29 |
KR100869296B1 true KR100869296B1 (ko) | 2008-11-18 |
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KR20070018726A KR100869296B1 (ko) | 2006-02-24 | 2007-02-23 | 압전 박막 디바이스의 제조 방법 |
Country Status (5)
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US (1) | US7854049B2 (ko) |
JP (1) | JP4627269B2 (ko) |
KR (1) | KR100869296B1 (ko) |
CN (1) | CN101026365B (ko) |
DE (1) | DE102007000101B4 (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5072047B2 (ja) * | 2007-08-23 | 2012-11-14 | 太陽誘電株式会社 | 弾性波フィルタ、それを用いたデュプレクサおよびそのデュプレクサを用いた通信機 |
JP4582235B2 (ja) * | 2008-10-31 | 2010-11-17 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
JP5433367B2 (ja) | 2008-11-19 | 2014-03-05 | 日本碍子株式会社 | ラム波装置 |
JP5384313B2 (ja) | 2008-12-24 | 2014-01-08 | 日本碍子株式会社 | 複合基板の製造方法及び複合基板 |
JP2010187373A (ja) | 2009-01-19 | 2010-08-26 | Ngk Insulators Ltd | 複合基板及びそれを用いた弾性波デバイス |
WO2010087226A1 (ja) | 2009-01-29 | 2010-08-05 | 株式会社村田製作所 | 複合基板の製造方法 |
JP5367612B2 (ja) * | 2009-02-17 | 2013-12-11 | 日本碍子株式会社 | ラム波装置 |
DE112010002662B4 (de) | 2009-06-09 | 2021-01-14 | Murata Manufacturing Co., Ltd. | Verfahren zur Herstellung eines piezoelektrischen Bauelements |
JP5637136B2 (ja) | 2009-07-07 | 2014-12-10 | 株式会社村田製作所 | 弾性波デバイスおよび弾性波デバイスの製造方法 |
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