KR100854799B1 - 소정의 물질로 된 블록을 절단하는 방법 및 박막을형성하는 방법 - Google Patents
소정의 물질로 된 블록을 절단하는 방법 및 박막을형성하는 방법 Download PDFInfo
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- KR100854799B1 KR100854799B1 KR1020037000449A KR20037000449A KR100854799B1 KR 100854799 B1 KR100854799 B1 KR 100854799B1 KR 1020037000449 A KR1020037000449 A KR 1020037000449A KR 20037000449 A KR20037000449 A KR 20037000449A KR 100854799 B1 KR100854799 B1 KR 100854799B1
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
- B81C2201/0192—Transfer of a layer from a carrier wafer to a device wafer by cleaving the carrier wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
- Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
- Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
- Y10T156/1184—Piercing layer during delaminating [e.g., cutting, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
- Y10T156/1967—Cutting delaminating means
Abstract
Description
Claims (13)
- 물질로 된 블록(10)을 절단하는 방법에 있어서,(a) 상기 블록 내에 한 단계 이상의 이온 주입에 의하여 취성화된 매몰 영역(12)(이하 "취성 영역"이라 함)을 형성하는 단계로서, 상기 매몰 영역은 하나 이상의 상기 블록의 표면부(14)를 한정하는 매몰 영역을 형성하는 단계,(b) 도구를 집어넣는 방법, 유체를 주입하는 방법, 열 처리 방법 및 이전 단계에서 주입된 이온과 다른 종류의 이온을 주입하는 방법 중에서 선택된 제1 분리 수단을 사용함으로써 상기 취성 영역이 위치하는 곳에 하나 이상의 분리 이니시에이터(30, 36)를 형성하는 단계, 및(c) 상기 제1 분리 수단과는 다르며 열처리 방법 및 상기 표면부 및 상기 취성 영역 사이에 기계적인 힘을 가하는 방법 중에서 선택된 제2 수단을 사용하여 상기 취성 영역이 위치하는 곳에서 상기 분리 이니시에이터(30, 36)에서부터, 잔류부(16)(이하 "주요부"라 함)로부터 상기 블록의 표면부(14)를 분리하는 단계를 포함하고,상기 매몰 영역의 취성화를 증가시키기 위해 상기 (a) 단계와 상기 (b) 단계 사이에 열처리가 가해지는 단계를 더 포함하는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제1항에 있어서, 상기 분리 이니시에이터는 상기 블록의 표면부(14)에 수직한 방향으로 보았을 때 상기 블록의 외주를 형성하는 상기 블록의 가장자리의 전부 또는 일부에 또는 상기 블록의 국부적인 내부 영역에 형성하는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제1항에 있어서, 표면 박막의 형태로 표면부를 상기 블록 내에 한정하기 위하여 상기 취성 영역은 상기한 블록의 평탄한 면에 평행하게 연장되도록 형성되어 있는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 상기 (a)단계 및 상기 (b)단계가 동시에 수행되는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 상기 (b)단계 및 상기 (c)단계가 동시에 수행되는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 상기 분리 이니시에이터(36)는 국부적으로 증가된 이온 도즈로 국부적인 이온 주입을 실시함으로써 형성하는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 상기 (c)단계에서 상기 블록의 외부로부터 가해지는 힘 또는 상기 블록 내에 존재하는 내부 스트레스 형태로 기계적인 힘이 가해지는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제3항에 있어서, 상기 (c)단계 이전에, 상기 표면 박막이 보강재에 접착되는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제8항에 있어서, 상기 보강재를 형성하는 하나 이상의 물질층이 상기 표면 박막 상에 증착되어 있는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제8항에 있어서, 상기 표면 박막은 접착제 또는 분자성 접촉 접착에 의하여 보강재와 결합되어 있는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 상기 (c) 단계 이후에, 상기 물질로 된 블록의 상기 주요부(16)는 새로운 표면부를 절단하는데 다시 사용하는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 상기 (c) 단계 이후에, 상기 물질로 된 블록의 상기 주요부(16)는 다른 블록의 표면부를 위한 보강재로서 다시 사용하는 것을 특징으로 하는 물질로 된 블록을 절단하는 방법.
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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FR00/09129 | 2000-07-12 | ||
FR0009129A FR2811807B1 (fr) | 2000-07-12 | 2000-07-12 | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
PCT/FR2001/002239 WO2002005344A1 (fr) | 2000-07-12 | 2001-07-11 | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
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Publication Number | Publication Date |
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KR20030015384A KR20030015384A (ko) | 2003-02-20 |
KR100854799B1 true KR100854799B1 (ko) | 2008-08-27 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020037000449A KR100854799B1 (ko) | 2000-07-12 | 2001-07-11 | 소정의 물질로 된 블록을 절단하는 방법 및 박막을형성하는 방법 |
Country Status (11)
Country | Link |
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US (2) | US7029548B2 (ko) |
EP (1) | EP1299905B1 (ko) |
JP (2) | JP5111713B2 (ko) |
KR (1) | KR100854799B1 (ko) |
AT (1) | ATE392711T1 (ko) |
AU (1) | AU2001276432A1 (ko) |
DE (1) | DE60133649T2 (ko) |
FR (1) | FR2811807B1 (ko) |
MY (1) | MY137543A (ko) |
TW (1) | TW505962B (ko) |
WO (1) | WO2002005344A1 (ko) |
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FR3083004B1 (fr) * | 2018-06-22 | 2021-01-15 | Commissariat Energie Atomique | Dispositif transducteur piezoelectrique et procede de realisation d'un tel dispositif |
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- 2001-07-11 EP EP01954078A patent/EP1299905B1/fr not_active Expired - Lifetime
- 2001-07-11 WO PCT/FR2001/002239 patent/WO2002005344A1/fr active IP Right Grant
- 2001-07-11 MY MYPI20013297A patent/MY137543A/en unknown
- 2001-07-11 TW TW090116949A patent/TW505962B/zh not_active IP Right Cessation
- 2001-07-11 KR KR1020037000449A patent/KR100854799B1/ko active IP Right Grant
- 2001-07-11 DE DE60133649T patent/DE60133649T2/de not_active Expired - Lifetime
- 2001-07-11 AU AU2001276432A patent/AU2001276432A1/en not_active Abandoned
- 2001-07-11 AT AT01954078T patent/ATE392711T1/de not_active IP Right Cessation
- 2001-07-11 JP JP2002509103A patent/JP5111713B2/ja not_active Expired - Lifetime
-
2006
- 2006-03-10 US US11/372,542 patent/US20060191627A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
TW505962B (en) | 2002-10-11 |
KR20030015384A (ko) | 2003-02-20 |
MY137543A (en) | 2009-02-27 |
DE60133649D1 (de) | 2008-05-29 |
EP1299905A1 (fr) | 2003-04-09 |
JP5111713B2 (ja) | 2013-01-09 |
DE60133649T2 (de) | 2009-05-20 |
ATE392711T1 (de) | 2008-05-15 |
JP2004503111A (ja) | 2004-01-29 |
WO2002005344A1 (fr) | 2002-01-17 |
EP1299905B1 (fr) | 2008-04-16 |
JP2012160754A (ja) | 2012-08-23 |
US7029548B2 (en) | 2006-04-18 |
US20030234075A1 (en) | 2003-12-25 |
US20060191627A1 (en) | 2006-08-31 |
AU2001276432A1 (en) | 2002-01-21 |
FR2811807A1 (fr) | 2002-01-18 |
FR2811807B1 (fr) | 2003-07-04 |
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