KR100833029B1 - 포토마스크의 제조 방법 및 포토마스크 - Google Patents

포토마스크의 제조 방법 및 포토마스크 Download PDF

Info

Publication number
KR100833029B1
KR100833029B1 KR1020010040670A KR20010040670A KR100833029B1 KR 100833029 B1 KR100833029 B1 KR 100833029B1 KR 1020010040670 A KR1020010040670 A KR 1020010040670A KR 20010040670 A KR20010040670 A KR 20010040670A KR 100833029 B1 KR100833029 B1 KR 100833029B1
Authority
KR
South Korea
Prior art keywords
pattern
mask
light shielding
resist film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010040670A
Other languages
English (en)
Korean (ko)
Other versions
KR20020005502A (ko
Inventor
하세가와노리오
다나까도시히꼬
오까다죠지
모리가즈따까
미야자끼고
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히타치세이사쿠쇼 filed Critical 가부시키가이샤 히타치세이사쿠쇼
Publication of KR20020005502A publication Critical patent/KR20020005502A/ko
Application granted granted Critical
Publication of KR100833029B1 publication Critical patent/KR100833029B1/ko
Assigned to 르네사스 일렉트로닉스 가부시키가이샤 reassignment 르네사스 일렉트로닉스 가부시키가이샤 권리의 전부이전등록 Assignors: 가부시키가이샤 히타치세이사쿠쇼
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020010040670A 2000-07-07 2001-07-07 포토마스크의 제조 방법 및 포토마스크 Expired - Fee Related KR100833029B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00206729 2000-07-07
JP2000206729A JP3760086B2 (ja) 2000-07-07 2000-07-07 フォトマスクの製造方法

Publications (2)

Publication Number Publication Date
KR20020005502A KR20020005502A (ko) 2002-01-17
KR100833029B1 true KR100833029B1 (ko) 2008-05-27

Family

ID=18703610

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010040670A Expired - Fee Related KR100833029B1 (ko) 2000-07-07 2001-07-07 포토마스크의 제조 방법 및 포토마스크

Country Status (4)

Country Link
US (2) US6656644B2 (https=)
JP (1) JP3760086B2 (https=)
KR (1) KR100833029B1 (https=)
TW (2) TW594869B (https=)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6898773B1 (en) 2002-01-22 2005-05-24 Cadence Design Systems, Inc. Method and apparatus for producing multi-layer topological routes
TW498435B (en) * 2000-08-15 2002-08-11 Hitachi Ltd Method of producing semiconductor integrated circuit device and method of producing multi-chip module
US20020170887A1 (en) * 2001-03-01 2002-11-21 Konica Corporation Optical element producing method, base material drawing method and base material drawing apparatus
KR100399597B1 (ko) * 2001-03-08 2003-09-26 삼성전자주식회사 오버레이 키 및 그의 제조방법과 이를 이용한 오버레이측정방법
US7107564B1 (en) 2001-06-03 2006-09-12 Cadence Design Systems, Inc. Method and apparatus for routing a set of nets
US6957408B1 (en) 2002-01-22 2005-10-18 Cadence Design Systems, Inc. Method and apparatus for routing nets in an integrated circuit layout
US7069530B1 (en) 2001-06-03 2006-06-27 Cadence Design Systems, Inc. Method and apparatus for routing groups of paths
US6957411B1 (en) 2001-06-03 2005-10-18 Cadence Design Systems, Inc. Gridless IC layout and method and apparatus for generating such a layout
JP3827544B2 (ja) 2001-08-31 2006-09-27 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US7013451B1 (en) 2002-01-22 2006-03-14 Cadence Design Systems, Inc. Method and apparatus for performing routability checking
US6938234B1 (en) 2002-01-22 2005-08-30 Cadence Design Systems, Inc. Method and apparatus for defining vias
US7089524B1 (en) 2002-01-22 2006-08-08 Cadence Design Systems, Inc. Topological vias route wherein the topological via does not have a coordinate within the region
US6944841B1 (en) 2002-01-22 2005-09-13 Cadence Design Systems, Inc. Method and apparatus for proportionate costing of vias
US7036105B1 (en) 2002-01-22 2006-04-25 Cadence Design Systems, Inc. Integrated circuits with at least one layer that has more than one preferred interconnect direction, and method for manufacturing such IC's
US7096449B1 (en) 2002-01-22 2006-08-22 Cadence Design Systems, Inc. Layouts with routes with different widths in different directions on the same layer, and method and apparatus for generating such layouts
US7080329B1 (en) 2002-01-22 2006-07-18 Cadence Design Systems, Inc. Method and apparatus for identifying optimized via locations
US7117468B1 (en) 2002-01-22 2006-10-03 Cadence Design Systems, Inc. Layouts with routes with different spacings in different directions on the same layer, and method and apparatus for generating such layouts
JP2003307856A (ja) * 2002-04-12 2003-10-31 Dainippon Printing Co Ltd レジストパターンの製造方法
TWI288443B (en) 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
US7051298B1 (en) 2002-06-04 2006-05-23 Cadence Design Systems, Inc. Method and apparatus for specifying a distance between an external state and a set of states in space
US7047512B1 (en) 2002-06-04 2006-05-16 Cadence Design Systems, Inc. Method and apparatus for specifying a cost function that represents the estimated distance between an external state and a set of states in a space
US7069531B1 (en) 2002-07-15 2006-06-27 Cadence Design Systems, Inc. Method and apparatus for identifying a path between source and target states in a space with more than two dimensions
US7073151B1 (en) 2002-06-04 2006-07-04 Cadence Design Systems, Inc. Method and apparatus for identifying a path between a set of source states and a set of target states in a triangulated space
JP2004144975A (ja) * 2002-10-24 2004-05-20 Renesas Technology Corp パターン転写マスク、半導体装置の製造方法、及び、マスクパターン作成用コンピュータプログラム
US7093221B2 (en) 2002-11-18 2006-08-15 Cadence Design Systems, Inc. Method and apparatus for identifying a group of routes for a set of nets
US6892369B2 (en) 2002-11-18 2005-05-10 Cadence Design Systems, Inc. Method and apparatus for costing routes of nets
US7216308B2 (en) 2002-11-18 2007-05-08 Cadence Design Systems, Inc. Method and apparatus for solving an optimization problem in an integrated circuit layout
US7263677B1 (en) * 2002-12-31 2007-08-28 Cadence Design Systems, Inc. Method and apparatus for creating efficient vias between metal layers in semiconductor designs and layouts
JP2004226717A (ja) 2003-01-23 2004-08-12 Renesas Technology Corp マスクの製造方法および半導体集積回路装置の製造方法
US6924070B2 (en) * 2003-03-19 2005-08-02 Intel Corporation Composite patterning integration
WO2004088419A1 (ja) * 2003-03-31 2004-10-14 Hoya Corporation マスクブランクス製造方法及びマスク製造方法
DE10324502B3 (de) * 2003-05-26 2005-04-21 Infineon Technologies Ag Photomaske, sowie Verfahren zur Herstellung von Halbleiter-Bauelementen
JP2005121788A (ja) * 2003-10-15 2005-05-12 Semiconductor Leading Edge Technologies Inc 欠陥検査用マスク及び欠陥検査用マスクの製造方法
KR100808799B1 (ko) * 2003-12-31 2008-02-29 동부일렉트로닉스 주식회사 파티클 크기 측정용 표준시료 제작 방법
KR100692872B1 (ko) * 2004-02-04 2007-03-12 엘지전자 주식회사 마스크 및 그 제조방법과 그를 이용한 유기 전계 발광소자의 제조방법
US7794897B2 (en) * 2004-03-02 2010-09-14 Kabushiki Kaisha Toshiba Mask pattern correcting method, mask pattern inspecting method, photo mask manufacturing method, and semiconductor device manufacturing method
KR100634437B1 (ko) * 2004-10-05 2006-10-16 삼성전자주식회사 반도체 소자 제조용 마스크 및 그 제조방법
US7494748B2 (en) * 2004-11-03 2009-02-24 International Business Machines Corporation Method for correction of defects in lithography masks
CN100595671C (zh) * 2004-11-08 2010-03-24 Hoya株式会社 掩模坯件的制造方法
JP5180433B2 (ja) * 2004-11-08 2013-04-10 Ｈｏｙａ株式会社 マスクブランクの製造方法、マスクの製造方法、及び、マスクブランクの再生方法
US7790334B2 (en) * 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
JP4450743B2 (ja) * 2005-02-08 2010-04-14 富士通マイクロエレクトロニクス株式会社 フォトマスク、フォトマスクの製造方法及び半導体装置の製造方法
US7460209B2 (en) * 2005-03-28 2008-12-02 Intel Corporation Advanced mask patterning with patterning layer
JP2007086368A (ja) * 2005-09-21 2007-04-05 Fujitsu Ltd フォトマスク、フォトマスクの製造方法および半導体装置の製造方法
TWI400758B (zh) * 2005-12-28 2013-07-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP4936515B2 (ja) * 2006-05-18 2012-05-23 Ｈｏｙａ株式会社 フォトマスクの製造方法、およびハーフトーン型位相シフトマスクの製造方法
US7955516B2 (en) * 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
US20080172517A1 (en) * 2007-01-11 2008-07-17 Guobiao Zhang Mask-Programmable Memory with Reserved Space
KR100928505B1 (ko) * 2007-10-22 2009-11-26 주식회사 동부하이텍 반도체 소자 제작 방법 및 장치
CN103676466B (zh) * 2012-09-14 2016-06-29 世禾科技股份有限公司 金属塑料复层式光罩的制造方法
KR102004399B1 (ko) 2012-11-05 2019-07-29 삼성디스플레이 주식회사 패턴 형성용 광 마스크
KR102239728B1 (ko) * 2013-08-28 2021-04-12 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
JP5850196B2 (ja) 2014-06-06 2016-02-03 大日本印刷株式会社 蒸着マスク、フレーム付き蒸着マスク、蒸着マスク準備体、及び有機半導体素子の製造方法
CN110344003B (zh) * 2014-06-06 2022-03-15 大日本印刷株式会社 蒸镀掩模及其前体、以及有机半导体元件的制造方法
CN111033768A (zh) * 2017-08-23 2020-04-17 日本碍子株式会社 透明密封构件及光学部件
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
CN114895522B (zh) * 2022-07-13 2023-06-09 上海传芯半导体有限公司 用于duv光刻的光掩模版结构及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53106574A (en) * 1977-02-28 1978-09-16 Nec Corp Production of photoetching mask for production of semiconductor device
JPS6085525A (ja) * 1983-10-18 1985-05-15 Seiko Instr & Electronics Ltd マスクリペア−方法
JPS6488550A (en) * 1987-09-30 1989-04-03 Sharp Kk Photomask
JPH05107745A (ja) * 1991-10-18 1993-04-30 Seiko Epson Corp フオトマスク及び半導体装置の製造方法
JPH07325383A (ja) * 1994-05-31 1995-12-12 Sony Corp ハーフトーン型位相シフトマスク、ハーフトーン型位相シフトマスクの作製に用いる半透明部形成材料、及びハーフトーン型位相シフトマスクの作製方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5483377A (en) 1977-12-16 1979-07-03 Fujitsu Ltd Correction method of pattern of photo mask
US4301997A (en) 1978-06-30 1981-11-24 Southwire Company Continuous copper melting furnace
JPS5522864A (en) 1978-08-07 1980-02-18 Nec Corp Mask for lithography and its manufacturing method
JPS5630129A (en) 1979-08-21 1981-03-26 Agency Of Ind Science & Technol Manufacture of photomask
FR2488947B1 (fr) * 1980-08-20 1985-10-04 Unite Hermetique Dispositif d'amortissement des vibrations produites par un compresseur hermetique, et pompes a chaleur munies d'un tel dispositif
US4684971A (en) * 1981-03-13 1987-08-04 American Telephone And Telegraph Company, At&T Bell Laboratories Ion implanted CMOS devices
JPS5922050A (ja) 1982-07-28 1984-02-04 Victor Co Of Japan Ltd ホトマスク
JPH02103547A (ja) * 1988-10-13 1990-04-16 Fujitsu Ltd 導電性層の形成方法
JP2566048B2 (ja) * 1990-04-19 1996-12-25 シャープ株式会社 光露光用マスク及びその製造方法
EP0464614B1 (en) * 1990-06-25 1999-09-29 Matsushita Electronics Corporation A composition having sensitivity to light or radiation
JP3105234B2 (ja) 1990-09-28 2000-10-30 株式会社日立製作所 半導体装置の製造方法
JP3120474B2 (ja) * 1991-06-10 2000-12-25 株式会社日立製作所 半導体集積回路装置の製造方法
JPH05289307A (ja) 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
US5556724A (en) * 1992-11-10 1996-09-17 Dai Nippon Printing Co., Ltd. Phase shift photomask and method of producing same
US5376483A (en) * 1993-10-07 1994-12-27 Micron Semiconductor, Inc. Method of making masks for phase shifting lithography
KR0170686B1 (ko) * 1995-09-13 1999-03-20 김광호 하프톤 위상반전마스크의 제조방법
KR100189741B1 (ko) * 1996-07-19 1999-06-01 구본준 위상반전마스크 및 그의 제조방법
US5948572A (en) * 1997-11-26 1999-09-07 United Microelectronics Corp. Mixed mode photomask for nikon stepper
US5989760A (en) * 1998-03-18 1999-11-23 Motorola, Inc. Method of processing a substrate utilizing specific chuck

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53106574A (en) * 1977-02-28 1978-09-16 Nec Corp Production of photoetching mask for production of semiconductor device
JPS6085525A (ja) * 1983-10-18 1985-05-15 Seiko Instr & Electronics Ltd マスクリペア−方法
JPS6488550A (en) * 1987-09-30 1989-04-03 Sharp Kk Photomask
JPH05107745A (ja) * 1991-10-18 1993-04-30 Seiko Epson Corp フオトマスク及び半導体装置の製造方法
JPH07325383A (ja) * 1994-05-31 1995-12-12 Sony Corp ハーフトーン型位相シフトマスク、ハーフトーン型位相シフトマスクの作製に用いる半透明部形成材料、及びハーフトーン型位相シフトマスクの作製方法

Also Published As

Publication number Publication date
US20020006555A1 (en) 2002-01-17
KR20020005502A (ko) 2002-01-17
JP2002023340A (ja) 2002-01-23
TW200302517A (en) 2003-08-01
US6846598B2 (en) 2005-01-25
TW594869B (en) 2004-06-21
JP3760086B2 (ja) 2006-03-29
US20040086789A1 (en) 2004-05-06
TW535228B (en) 2003-06-01
US6656644B2 (en) 2003-12-02

Similar Documents

Publication Publication Date Title
KR100833029B1 (ko) 포토마스크의 제조 방법 및 포토마스크
KR100798569B1 (ko) 반도체 집적 회로 장치의 제조 방법
US6653052B2 (en) Electron device manufacturing method, a pattern forming method, and a photomask used for those methods
JPWO2002005032A1 (ja) 半導体集積回路装置の製造方法
JP4223215B2 (ja) 半導体集積回路装置の製造方法、これに用いる光学マスク
KR20030068468A (ko) 반도체 집적 회로 장치의 제조 방법
KR100429314B1 (ko) 반도체 집적회로장치의 제조방법 및 멀티칩 모듈의 제조방법
JPWO2001002908A1 (ja) 半導体集積回路装置の製造方法、これに用いる光学マスク及びその製造方法、並びにそれに用いるマスクブランクス
KR20020027257A (ko) 반도체 집적 회로 장치의 제조 방법
KR20020033040A (ko) 반도체장치의 제조방법
KR20020047008A (ko) 반도체 집적 회로 장치의 제조 방법
US6706452B2 (en) Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device
US6656646B2 (en) Fabrication method of semiconductor integrated circuit device
JP2004226995A (ja) フォトマスクの製造方法およびフォトマスク
US20050084771A1 (en) Phase shift mask

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20130503

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20140502

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20150416

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160522

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160522

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000