KR100821584B1 - 라이트 트래이닝 기능을 갖는 반도체 메모리 장치 - Google Patents

라이트 트래이닝 기능을 갖는 반도체 메모리 장치 Download PDF

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Publication number
KR100821584B1
KR100821584B1 KR1020070023486A KR20070023486A KR100821584B1 KR 100821584 B1 KR100821584 B1 KR 100821584B1 KR 1020070023486 A KR1020070023486 A KR 1020070023486A KR 20070023486 A KR20070023486 A KR 20070023486A KR 100821584 B1 KR100821584 B1 KR 100821584B1
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South Korea
Prior art keywords
data
signal
write
output
memory cell
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KR1020070023486A
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English (en)
Korean (ko)
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윤상식
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주식회사 하이닉스반도체
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Priority to KR1020070023486A priority Critical patent/KR100821584B1/ko
Priority to US11/878,572 priority patent/US7692982B2/en
Priority to JP2007226808A priority patent/JP2008226423A/ja
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Publication of KR100821584B1 publication Critical patent/KR100821584B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2254—Calibration

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  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1020070023486A 2007-03-09 2007-03-09 라이트 트래이닝 기능을 갖는 반도체 메모리 장치 Active KR100821584B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020070023486A KR100821584B1 (ko) 2007-03-09 2007-03-09 라이트 트래이닝 기능을 갖는 반도체 메모리 장치
US11/878,572 US7692982B2 (en) 2007-03-09 2007-07-25 Semiconductor memory apparatus with write training function
JP2007226808A JP2008226423A (ja) 2007-03-09 2007-08-31 ライトトレーニング機能を持つ半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070023486A KR100821584B1 (ko) 2007-03-09 2007-03-09 라이트 트래이닝 기능을 갖는 반도체 메모리 장치

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KR100821584B1 true KR100821584B1 (ko) 2008-04-15

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KR1020070023486A Active KR100821584B1 (ko) 2007-03-09 2007-03-09 라이트 트래이닝 기능을 갖는 반도체 메모리 장치

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Country Link
US (1) US7692982B2 (https=)
JP (1) JP2008226423A (https=)
KR (1) KR100821584B1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10754563B2 (en) 2017-08-09 2020-08-25 Samsung Electronics Co., Ltd. Memory device for efficiently determining whether to perform re-training operation and memory system including the same
US11604714B2 (en) 2017-08-09 2023-03-14 Samsung Electronics Co, Ltd. Memory device for efficiently determining whether to perform re-training operation and memory system including the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100891301B1 (ko) 2007-09-03 2009-04-06 주식회사 하이닉스반도체 고속으로 데이터 송신할 수 있는 반도체 메모리 장치
KR100903368B1 (ko) * 2007-11-02 2009-06-23 주식회사 하이닉스반도체 고속으로 데이터 송신할 수 있는 반도체 메모리 장치
KR100903367B1 (ko) 2007-11-02 2009-06-23 주식회사 하이닉스반도체 고속으로 데이터 송신할 수 있는 반도체 메모리 장치 및 그를 포함하는 시스템
KR100942953B1 (ko) * 2008-06-30 2010-02-17 주식회사 하이닉스반도체 데이터 전달 회로 및 그를 포함하는 반도체 메모리 장치
US8578086B2 (en) * 2009-09-25 2013-11-05 Intel Corporation Memory link initialization
KR101791456B1 (ko) * 2010-10-11 2017-11-21 삼성전자주식회사 라이트 트레이닝 방법 및 이를 수행하는 반도체 장치
US9570182B1 (en) 2015-09-02 2017-02-14 Kabushiki Kaisha Toshiba Semiconductor memory device and memory system
KR102353027B1 (ko) * 2017-07-03 2022-01-20 삼성전자주식회사 스토리지 장치의 데이터 트레이닝 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100256466B1 (ko) 1995-12-19 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 동기형반도체기억장치
KR20050001152A (ko) * 2003-06-27 2005-01-06 주식회사 하이닉스반도체 지연 고정 루프 및 지연 고정 루프에서의 클럭 지연 고정방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2982875B2 (ja) * 1987-12-28 1999-11-29 株式会社日立製作所 スレーブ制御装置
JP2001337862A (ja) * 2000-05-29 2001-12-07 Fujitsu Ltd メモリシステム及びそのセットアップ方法
US7370170B2 (en) 2004-04-27 2008-05-06 Nvidia Corporation Data mask as write-training feedback flag
US20060253663A1 (en) * 2005-05-06 2006-11-09 Micron Technology, Inc. Memory device and method having a data bypass path to allow rapid testing and calibration
JP4763360B2 (ja) * 2005-06-30 2011-08-31 アラクサラネットワークス株式会社 半導体装置
US7783954B2 (en) * 2006-09-11 2010-08-24 Globalfoundries Inc. System for controlling high-speed bidirectional communication
US7411862B2 (en) * 2006-11-15 2008-08-12 Qimonda Ag Control signal training

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100256466B1 (ko) 1995-12-19 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 동기형반도체기억장치
KR20050001152A (ko) * 2003-06-27 2005-01-06 주식회사 하이닉스반도체 지연 고정 루프 및 지연 고정 루프에서의 클럭 지연 고정방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10754563B2 (en) 2017-08-09 2020-08-25 Samsung Electronics Co., Ltd. Memory device for efficiently determining whether to perform re-training operation and memory system including the same
US11604714B2 (en) 2017-08-09 2023-03-14 Samsung Electronics Co, Ltd. Memory device for efficiently determining whether to perform re-training operation and memory system including the same
US12079147B2 (en) 2017-08-09 2024-09-03 Samsung Electronics Co., Ltd. Memory device for efficiently determining whether to perform re-training operation and memory system including the same

Also Published As

Publication number Publication date
US7692982B2 (en) 2010-04-06
JP2008226423A (ja) 2008-09-25
US20080219064A1 (en) 2008-09-11

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