KR100805360B1 - 코팅층을 갖는 반사 마스크 기판 - Google Patents

코팅층을 갖는 반사 마스크 기판 Download PDF

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Publication number
KR100805360B1
KR100805360B1 KR1020017014245A KR20017014245A KR100805360B1 KR 100805360 B1 KR100805360 B1 KR 100805360B1 KR 1020017014245 A KR1020017014245 A KR 1020017014245A KR 20017014245 A KR20017014245 A KR 20017014245A KR 100805360 B1 KR100805360 B1 KR 100805360B1
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South Korea
Prior art keywords
substrate
silicon
material layer
thermal expansion
mask substrate
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Expired - Lifetime
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KR1020017014245A
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Korean (ko)
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KR20020010912A (ko
Inventor
윌리엄만-와이 텅
존 테일러
스콧디 헥터
파비터제이에스 망가트
앨런알 스티버스
패트릭지 코프론
매튜에이 톰슨
Original Assignee
더 리전트 오브 더 유니버시티 오브 캘리포니아
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Publication of KR20020010912A publication Critical patent/KR20020010912A/ko
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Publication of KR100805360B1 publication Critical patent/KR100805360B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020017014245A 1999-06-07 2000-06-06 코팅층을 갖는 반사 마스크 기판 Expired - Lifetime KR100805360B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13815899P 1999-06-07 1999-06-07
US60/138,158 1999-06-07

Publications (2)

Publication Number Publication Date
KR20020010912A KR20020010912A (ko) 2002-02-06
KR100805360B1 true KR100805360B1 (ko) 2008-02-20

Family

ID=22480708

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017014245A Expired - Lifetime KR100805360B1 (ko) 1999-06-07 2000-06-06 코팅층을 갖는 반사 마스크 기판

Country Status (6)

Country Link
US (1) US6352803B1 (enExample)
EP (1) EP1190276A2 (enExample)
JP (1) JP4959080B2 (enExample)
KR (1) KR100805360B1 (enExample)
AU (1) AU5597000A (enExample)
WO (1) WO2000075727A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015153774A1 (en) * 2014-04-02 2015-10-08 Zygo Corporation Photo-masks for lithography

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FR2797060B1 (fr) * 1999-07-29 2001-09-14 Commissariat Energie Atomique Structure pour masque de lithographie en reflexion et procede pour sa realisation
US6319635B1 (en) * 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
US6368942B1 (en) * 2000-03-31 2002-04-09 Euv Llc Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer
US6524881B1 (en) * 2000-08-25 2003-02-25 Micron Technology, Inc. Method and apparatus for marking a bare semiconductor die
US6821682B1 (en) * 2000-09-26 2004-11-23 The Euv Llc Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography
JP3939132B2 (ja) * 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
US6737201B2 (en) * 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
US6749973B2 (en) * 2001-02-14 2004-06-15 Hoya Corporation Reflection type mask blank for EUV exposure and reflection type mask for EUV exposure as well as method of producing the mask
JP2002299228A (ja) * 2001-04-03 2002-10-11 Nikon Corp レチクル、それを用いた露光装置及び露光方法
DE10164112A1 (de) * 2001-12-24 2003-07-03 Inst Oberflaechenmodifizierung Verfahren zur Defektanalyse an reflektiven Optiken
US7169685B2 (en) * 2002-02-25 2007-01-30 Micron Technology, Inc. Wafer back side coating to balance stress from passivation layer on front of wafer and be used as die attach adhesive
KR100455383B1 (ko) * 2002-04-18 2004-11-06 삼성전자주식회사 반사 포토마스크, 반사 포토마스크의 제조방법 및 이를이용한 집적회로 제조방법
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US7129010B2 (en) * 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
US7056627B2 (en) * 2002-08-23 2006-06-06 Hoya Corporation Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask
DE10255605B4 (de) * 2002-11-28 2005-07-07 Infineon Technologies Ag Reflektionsmaske zur Projektion einer Struktur auf einen Halbleiterwafer sowie Verfahren zu deren Herstellung
DE10302342A1 (de) * 2003-01-17 2004-08-05 Schott Glas Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür
DE10317792A1 (de) * 2003-04-16 2004-11-11 Schott Glas Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung
JP4232018B2 (ja) * 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
US7075103B2 (en) 2003-12-19 2006-07-11 General Electric Company Multilayer device and method of making
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
JP2005210093A (ja) * 2003-12-25 2005-08-04 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
US7198872B2 (en) * 2004-05-25 2007-04-03 International Business Machines Corporation Light scattering EUVL mask
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US20060008749A1 (en) * 2004-07-08 2006-01-12 Frank Sobel Method for manufacturing of a mask blank for EUV photolithography and mask blank
US7407729B2 (en) * 2004-08-05 2008-08-05 Infineon Technologies Ag EUV magnetic contrast lithography mask and manufacture thereof
DE102004038548A1 (de) * 2004-08-06 2006-03-16 Schott Ag Verfahren zur Herstellung eines Maskenblank für photolithographische Anwendungen und Maskenblank
JP4604140B2 (ja) * 2004-09-13 2010-12-22 マニー株式会社 医療用針又は刃物
JP5042456B2 (ja) * 2005-03-03 2012-10-03 凸版印刷株式会社 ステンシルマスクの製造方法
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KR100755395B1 (ko) 2006-08-31 2007-09-04 삼성전자주식회사 반사 마스크, 반사 마스크 고정 장치 및 방법
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US10539884B2 (en) 2018-02-22 2020-01-21 International Business Machines Corporation Post-lithography defect inspection using an e-beam inspection tool
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JP7318607B2 (ja) 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
KR20240036124A (ko) 2021-02-16 2024-03-19 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그것들의 제조 방법
KR102852953B1 (ko) 2022-04-28 2025-09-02 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크의 제조 방법
WO2025226454A1 (en) * 2024-04-26 2025-10-30 Lam Research Corporation Methods to enhance glass substrate handling in semiconductor processing

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JPH10144584A (ja) * 1996-11-08 1998-05-29 Shin Etsu Chem Co Ltd Ｘ線リソグラフィ用マスクメンブレン
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
WO2015153774A1 (en) * 2014-04-02 2015-10-08 Zygo Corporation Photo-masks for lithography
US9411222B2 (en) 2014-04-02 2016-08-09 Zygo Corporation Photo-masks for lithography

Also Published As

Publication number Publication date
EP1190276A2 (en) 2002-03-27
WO2000075727A2 (en) 2000-12-14
WO2000075727A3 (en) 2001-05-17
KR20020010912A (ko) 2002-02-06
US6352803B1 (en) 2002-03-05
AU5597000A (en) 2000-12-28
JP2003501823A (ja) 2003-01-14
JP4959080B2 (ja) 2012-06-20

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