KR100795013B1 - 밴드 갭 레퍼런스 회로와 이를 이용한 온도 정보 출력장치 - Google Patents

밴드 갭 레퍼런스 회로와 이를 이용한 온도 정보 출력장치 Download PDF

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Publication number
KR100795013B1
KR100795013B1 KR1020060088739A KR20060088739A KR100795013B1 KR 100795013 B1 KR100795013 B1 KR 100795013B1 KR 1020060088739 A KR1020060088739 A KR 1020060088739A KR 20060088739 A KR20060088739 A KR 20060088739A KR 100795013 B1 KR100795013 B1 KR 100795013B1
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South Korea
Prior art keywords
current
temperature
voltage
generator
transistors
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KR1020060088739A
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English (en)
Korean (ko)
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정춘석
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주식회사 하이닉스반도체
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Priority to KR1020060088739A priority Critical patent/KR100795013B1/ko
Priority to US11/647,485 priority patent/US7692418B2/en
Priority to TW096111879A priority patent/TWI336477B/zh
Priority to CN2007100902744A priority patent/CN101145068B/zh
Priority to JP2007171934A priority patent/JP2008071335A/ja
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Read Only Memory (AREA)
KR1020060088739A 2006-09-13 2006-09-13 밴드 갭 레퍼런스 회로와 이를 이용한 온도 정보 출력장치 Active KR100795013B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020060088739A KR100795013B1 (ko) 2006-09-13 2006-09-13 밴드 갭 레퍼런스 회로와 이를 이용한 온도 정보 출력장치
US11/647,485 US7692418B2 (en) 2006-09-13 2006-12-29 Band gap reference circuit and temperature information output apparatus using the same
TW096111879A TWI336477B (en) 2006-09-13 2007-04-03 Band gap reference circuit and temperature information output apparatus using the same
CN2007100902744A CN101145068B (zh) 2006-09-13 2007-04-17 带隙参考电路和使用该带隙参考电路的温度信息输出装置
JP2007171934A JP2008071335A (ja) 2006-09-13 2007-06-29 バンドギャップレファレンス回路とこれを利用した温度情報出力装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060088739A KR100795013B1 (ko) 2006-09-13 2006-09-13 밴드 갭 레퍼런스 회로와 이를 이용한 온도 정보 출력장치

Publications (1)

Publication Number Publication Date
KR100795013B1 true KR100795013B1 (ko) 2008-01-16

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Family Applications (1)

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KR1020060088739A Active KR100795013B1 (ko) 2006-09-13 2006-09-13 밴드 갭 레퍼런스 회로와 이를 이용한 온도 정보 출력장치

Country Status (5)

Country Link
US (1) US7692418B2 (enExample)
JP (1) JP2008071335A (enExample)
KR (1) KR100795013B1 (enExample)
CN (1) CN101145068B (enExample)
TW (1) TWI336477B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190090223A (ko) * 2018-01-24 2019-08-01 삼성전자주식회사 온도 감지 장치 및 온도-전압 변환기

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* Cited by examiner, † Cited by third party
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KR100807594B1 (ko) * 2006-09-28 2008-02-28 주식회사 하이닉스반도체 온도 정보 출력장치 및 그를 구비하는 반도체소자
JP5361182B2 (ja) * 2007-12-21 2013-12-04 株式会社東芝 半導体記憶装置
KR100950486B1 (ko) * 2008-10-02 2010-03-31 주식회사 하이닉스반도체 내부전압 생성회로
KR101043044B1 (ko) 2009-01-23 2011-06-21 (주)카이로넷 공급 전압의 변화에 무관한 기준 전압을 제공할 수 있는 기준 전압 발생기
JP2011188224A (ja) * 2010-03-09 2011-09-22 Sony Corp 温度情報出力装置、撮像装置、温度情報出力方法
JP2012084034A (ja) * 2010-10-14 2012-04-26 Toshiba Corp 定電圧定電流発生回路
TWI453894B (zh) * 2011-11-23 2014-09-21 Ncku Res & Dev Foundation 低電壓能階參考位準電路
US8698479B2 (en) * 2012-03-30 2014-04-15 Elite Semiconductor Memory Technology Inc. Bandgap reference circuit for providing reference voltage
KR102033790B1 (ko) * 2013-09-30 2019-11-08 에스케이하이닉스 주식회사 온도센서
KR101937263B1 (ko) * 2017-07-28 2019-04-09 현대오트론 주식회사 차량용 카메라를 위한 신호 처리 장치 및 그것의 동작 방법
KR20190029896A (ko) * 2017-09-13 2019-03-21 에스케이하이닉스 주식회사 온도 센싱 회로
JP2019215944A (ja) 2018-06-12 2019-12-19 東芝メモリ株式会社 半導体集積回路および検査方法
US11127437B2 (en) * 2019-10-01 2021-09-21 Macronix International Co., Ltd. Managing startups of bandgap reference circuits in memory systems
CN111399581B (zh) * 2020-03-12 2022-06-24 成都微光集电科技有限公司 一种具有相关双采样功能的高精度温度传感器
US12061493B2 (en) 2020-09-25 2024-08-13 Intel Corporation Low power hybrid reverse bandgap reference and digital temperature sensor

Citations (2)

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US6181121B1 (en) 1999-03-04 2001-01-30 Cypress Semiconductor Corp. Low supply voltage BICMOS self-biased bandgap reference using a current summing architecture
US20060103455A1 (en) 2004-11-15 2006-05-18 Samsung Electronics Co., Ltd. Resistorless bias current generation circuit

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US5784328A (en) * 1996-12-23 1998-07-21 Lsi Logic Corporation Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array
US6281760B1 (en) * 1998-07-23 2001-08-28 Texas Instruments Incorporated On-chip temperature sensor and oscillator for reduced self-refresh current for dynamic random access memory
KR100338103B1 (ko) 1999-06-23 2002-05-24 박종섭 펌핑 전압 레귤레이션 회로
US6788041B2 (en) * 2001-12-06 2004-09-07 Skyworks Solutions Inc Low power bandgap circuit
US6921199B2 (en) * 2002-03-22 2005-07-26 Ricoh Company, Ltd. Temperature sensor
US6720755B1 (en) * 2002-05-16 2004-04-13 Lattice Semiconductor Corporation Band gap reference circuit
US6891358B2 (en) * 2002-12-27 2005-05-10 Analog Devices, Inc. Bandgap voltage reference circuit with high power supply rejection ratio (PSRR) and curvature correction
US7078958B2 (en) * 2003-02-10 2006-07-18 Exar Corporation CMOS bandgap reference with low voltage operation
US6828847B1 (en) * 2003-02-27 2004-12-07 Analog Devices, Inc. Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference
JP2004318235A (ja) * 2003-04-11 2004-11-11 Renesas Technology Corp 基準電圧発生回路
US7009904B2 (en) * 2003-11-19 2006-03-07 Infineon Technologies Ag Back-bias voltage generator with temperature control
JP4380343B2 (ja) 2004-01-30 2009-12-09 ソニー株式会社 バンドギャップレファレンス回路及び同回路を有する半導体装置
JP4517062B2 (ja) * 2004-02-24 2010-08-04 泰博 杉本 定電圧発生回路
US7127368B2 (en) * 2004-11-19 2006-10-24 Stmicroelectronics Asia Pacific Pte. Ltd. On-chip temperature sensor for low voltage operation
US7138823B2 (en) * 2005-01-20 2006-11-21 Micron Technology, Inc. Apparatus and method for independent control of on-die termination for output buffers of a memory device
US7413342B2 (en) * 2005-02-22 2008-08-19 Micron Technology, Inc. DRAM temperature measurement system

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US6181121B1 (en) 1999-03-04 2001-01-30 Cypress Semiconductor Corp. Low supply voltage BICMOS self-biased bandgap reference using a current summing architecture
US20060103455A1 (en) 2004-11-15 2006-05-18 Samsung Electronics Co., Ltd. Resistorless bias current generation circuit
KR20060053414A (ko) * 2004-11-15 2006-05-22 삼성전자주식회사 온도-비례 전류 제공회로, 온도-반비례 전류 제공회로 및이를 이용한 기준전류 제공회로

Non-Patent Citations (1)

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Title
KRKR1020010003402 A

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190090223A (ko) * 2018-01-24 2019-08-01 삼성전자주식회사 온도 감지 장치 및 온도-전압 변환기
KR102533348B1 (ko) * 2018-01-24 2023-05-19 삼성전자주식회사 온도 감지 장치 및 온도-전압 변환기

Also Published As

Publication number Publication date
US20080061760A1 (en) 2008-03-13
TWI336477B (en) 2011-01-21
CN101145068A (zh) 2008-03-19
JP2008071335A (ja) 2008-03-27
TW200814079A (en) 2008-03-16
US7692418B2 (en) 2010-04-06
CN101145068B (zh) 2010-09-01

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