CN101145068B - 带隙参考电路和使用该带隙参考电路的温度信息输出装置 - Google Patents

带隙参考电路和使用该带隙参考电路的温度信息输出装置 Download PDF

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CN101145068B
CN101145068B CN2007100902744A CN200710090274A CN101145068B CN 101145068 B CN101145068 B CN 101145068B CN 2007100902744 A CN2007100902744 A CN 2007100902744A CN 200710090274 A CN200710090274 A CN 200710090274A CN 101145068 B CN101145068 B CN 101145068B
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current
temperature
voltage
proportional
transistors
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CN101145068A (zh
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郑椿锡
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Mimi Ip Co ltd
SK Hynix Inc
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Hynix Semiconductor Inc
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Read Only Memory (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
CN2007100902744A 2006-09-13 2007-04-17 带隙参考电路和使用该带隙参考电路的温度信息输出装置 Active CN101145068B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2006-0088739 2006-09-13
KR1020060088739A KR100795013B1 (ko) 2006-09-13 2006-09-13 밴드 갭 레퍼런스 회로와 이를 이용한 온도 정보 출력장치
KR1020060088739 2006-09-13

Publications (2)

Publication Number Publication Date
CN101145068A CN101145068A (zh) 2008-03-19
CN101145068B true CN101145068B (zh) 2010-09-01

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Country Status (5)

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US (1) US7692418B2 (enExample)
JP (1) JP2008071335A (enExample)
KR (1) KR100795013B1 (enExample)
CN (1) CN101145068B (enExample)
TW (1) TWI336477B (enExample)

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KR100807594B1 (ko) * 2006-09-28 2008-02-28 주식회사 하이닉스반도체 온도 정보 출력장치 및 그를 구비하는 반도체소자
JP5361182B2 (ja) * 2007-12-21 2013-12-04 株式会社東芝 半導体記憶装置
KR100950486B1 (ko) * 2008-10-02 2010-03-31 주식회사 하이닉스반도체 내부전압 생성회로
KR101043044B1 (ko) 2009-01-23 2011-06-21 (주)카이로넷 공급 전압의 변화에 무관한 기준 전압을 제공할 수 있는 기준 전압 발생기
JP2011188224A (ja) * 2010-03-09 2011-09-22 Sony Corp 温度情報出力装置、撮像装置、温度情報出力方法
JP2012084034A (ja) * 2010-10-14 2012-04-26 Toshiba Corp 定電圧定電流発生回路
TWI453894B (zh) * 2011-11-23 2014-09-21 Ncku Res & Dev Foundation 低電壓能階參考位準電路
US8698479B2 (en) * 2012-03-30 2014-04-15 Elite Semiconductor Memory Technology Inc. Bandgap reference circuit for providing reference voltage
KR102033790B1 (ko) * 2013-09-30 2019-11-08 에스케이하이닉스 주식회사 온도센서
KR101937263B1 (ko) * 2017-07-28 2019-04-09 현대오트론 주식회사 차량용 카메라를 위한 신호 처리 장치 및 그것의 동작 방법
KR20190029896A (ko) * 2017-09-13 2019-03-21 에스케이하이닉스 주식회사 온도 센싱 회로
KR102533348B1 (ko) * 2018-01-24 2023-05-19 삼성전자주식회사 온도 감지 장치 및 온도-전압 변환기
JP2019215944A (ja) 2018-06-12 2019-12-19 東芝メモリ株式会社 半導体集積回路および検査方法
US11127437B2 (en) 2019-10-01 2021-09-21 Macronix International Co., Ltd. Managing startups of bandgap reference circuits in memory systems
CN111399581B (zh) * 2020-03-12 2022-06-24 成都微光集电科技有限公司 一种具有相关双采样功能的高精度温度传感器
US12061493B2 (en) 2020-09-25 2024-08-13 Intel Corporation Low power hybrid reverse bandgap reference and digital temperature sensor

Citations (2)

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US6720755B1 (en) * 2002-05-16 2004-04-13 Lattice Semiconductor Corporation Band gap reference circuit
US7078958B2 (en) * 2003-02-10 2006-07-18 Exar Corporation CMOS bandgap reference with low voltage operation

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US5784328A (en) 1996-12-23 1998-07-21 Lsi Logic Corporation Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array
US6281760B1 (en) 1998-07-23 2001-08-28 Texas Instruments Incorporated On-chip temperature sensor and oscillator for reduced self-refresh current for dynamic random access memory
US6181121B1 (en) 1999-03-04 2001-01-30 Cypress Semiconductor Corp. Low supply voltage BICMOS self-biased bandgap reference using a current summing architecture
KR100338103B1 (ko) 1999-06-23 2002-05-24 박종섭 펌핑 전압 레귤레이션 회로
US6788041B2 (en) * 2001-12-06 2004-09-07 Skyworks Solutions Inc Low power bandgap circuit
US6921199B2 (en) * 2002-03-22 2005-07-26 Ricoh Company, Ltd. Temperature sensor
US6891358B2 (en) * 2002-12-27 2005-05-10 Analog Devices, Inc. Bandgap voltage reference circuit with high power supply rejection ratio (PSRR) and curvature correction
US6828847B1 (en) * 2003-02-27 2004-12-07 Analog Devices, Inc. Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference
JP2004318235A (ja) * 2003-04-11 2004-11-11 Renesas Technology Corp 基準電圧発生回路
US7009904B2 (en) 2003-11-19 2006-03-07 Infineon Technologies Ag Back-bias voltage generator with temperature control
JP4380343B2 (ja) 2004-01-30 2009-12-09 ソニー株式会社 バンドギャップレファレンス回路及び同回路を有する半導体装置
JP4517062B2 (ja) * 2004-02-24 2010-08-04 泰博 杉本 定電圧発生回路
KR100596978B1 (ko) 2004-11-15 2006-07-05 삼성전자주식회사 온도-비례 전류 제공회로, 온도-반비례 전류 제공회로 및이를 이용한 기준전류 제공회로
US7127368B2 (en) 2004-11-19 2006-10-24 Stmicroelectronics Asia Pacific Pte. Ltd. On-chip temperature sensor for low voltage operation
US7138823B2 (en) * 2005-01-20 2006-11-21 Micron Technology, Inc. Apparatus and method for independent control of on-die termination for output buffers of a memory device
US7413342B2 (en) * 2005-02-22 2008-08-19 Micron Technology, Inc. DRAM temperature measurement system

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US6720755B1 (en) * 2002-05-16 2004-04-13 Lattice Semiconductor Corporation Band gap reference circuit
US7078958B2 (en) * 2003-02-10 2006-07-18 Exar Corporation CMOS bandgap reference with low voltage operation

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JP特开2006-59001A 2006.03.02
US 2003/0006831 A1,全文.

Also Published As

Publication number Publication date
JP2008071335A (ja) 2008-03-27
TWI336477B (en) 2011-01-21
CN101145068A (zh) 2008-03-19
KR100795013B1 (ko) 2008-01-16
TW200814079A (en) 2008-03-16
US7692418B2 (en) 2010-04-06
US20080061760A1 (en) 2008-03-13

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Address after: Gyeonggi Do Lichuan City, South Korea

Patentee after: Sk Hynix Inc.

Country or region after: Republic of Korea

Address before: Gyeonggi Do Lichuan City, South Korea

Patentee before: HYNIX SEMICONDUCTOR Inc.

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Effective date of registration: 20240611

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Patentee after: Mimi IP Co.,Ltd.

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Address before: Gyeonggi Do Lichuan City, South Korea

Patentee before: Sk Hynix Inc.

Country or region before: Republic of Korea