KR100766262B1 - 탄성표면파 장치의 제조방법 및 탄성표면파 장치 - Google Patents
탄성표면파 장치의 제조방법 및 탄성표면파 장치 Download PDFInfo
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- KR100766262B1 KR100766262B1 KR1020040078234A KR20040078234A KR100766262B1 KR 100766262 B1 KR100766262 B1 KR 100766262B1 KR 1020040078234 A KR1020040078234 A KR 1020040078234A KR 20040078234 A KR20040078234 A KR 20040078234A KR 100766262 B1 KR100766262 B1 KR 100766262B1
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- acoustic wave
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- 238000000034 method Methods 0.000 title claims abstract description 45
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- 238000000059 patterning Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims description 48
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 14
- 230000001965 increasing effect Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 abstract description 5
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
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- 230000006866 deterioration Effects 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
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- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (8)
- 압전기판상에, 인터디지탈 전극(interdigital electrode)과, 인터디지탈 전극에 연결된 배선전극과, 배선전극에 접속된 전극패드를 갖는 전극이 형성되어 있으며, 적어도 전극패드가 복수의 전극층을 적층한 구조를 갖고 있고, 상기 전극패드에 범프가 접합되어 있는 탄성표면파 장치의 제조방법으로서,압전기판상에 적어도 상기 인터디지탈 전극, 배선전극 및 전극패드를 구성하기 위하여 제 1 전극막을 형성하는 공정과,상기 제 1 전극막을 덮도록 압전기판상에 절연막을 형성하는 공정과,상기 절연막을 패터닝하여, 상기 제 1 전극막 중, 제 2 전극막이 적층되는 부분상의 절연막을 제거하는 공정과,상기 절연막이 제거되어 있는 제 1 전극막상 부분에, 제 2 전극막을 형성하는 공정과,상기 제 2 전극막상에 범프를 접합하는 공정을 구비하고,상기 제 2 전극막이 적층되는 부분이 상기 전극패드, 배선전극 및 인터디지탈 전극의 버스바(bus bar) 부분인 것을 특징으로 하는 탄성표면파 장치의 제조방법.
- 삭제
- 압전기판상에, 인터디지탈 전극과, 인터디지탈 전극에 연결된 배선전극과, 배선전극에 접속된 전극패드를 갖는 전극이 형성되어 있으며, 적어도 전극패드가 복수의 전극층을 적층한 구조를 갖고 있고, 상기 전극패드에 범프가 접합되어 있는 탄성표면파 장치의 제조방법으로서,압전기판상에 적어도 상기 인터디지탈 전극 및 배선전극을 구성하기 위하여 제 1 전극막을 형성하는 공정과,상기 제 1 전극막을 덮도록 압전기판상에 절연막을 형성하는 공정과,상기 절연막을 패터닝하여, 상기 제 1 전극막 중, 제 2 전극막이 적층되는 부분상의 절연막과, 상기 압전기판 중, 전극패드를 구성하기 위한 제 2 전극막이 형성되는 부분상의 절연막을 제거하는 공정과,상기 절연막이 제거되어 있는 제 1 전극막상 부분 및 압전기판상의 제 2 전극막이 형성되는 부분에 제 2 전극막을 형성하는 공정과,상기 전극패드를 구성하고 있는 상기 제 2 전극막상에 범프를 접합하는 공정을 구비하는 것을 특징으로 하는 탄성표면파 장치의 제조방법.
- 제 1 항 또는 제 3 항에 있어서, 상기 절연막의 패터닝을 행한 후에, 절연막의 두께를 얇게 하도록 해서 주파수 조정을 행하는 공정을 더 구비하는 것을 특징으로 하는 탄성표면파 장치의 제조방법.
- 제 1 항에 있어서, 상기 절연막으로서, SiO2막 또는 SiN막을 형성하는 것을 특징으로 하는 탄성표면파 장치의 제조방법.
- 제 1 항에 있어서, 상기 제 1 전극막의 언더라이닝(underlying)에, 상기 압전기판과 전극의 밀착성을 높이기 위한 언더라이닝 전극층(underlying electrode layer)을 형성하는 공정을 더 구비하고, 상기 언더라이닝 전극층상에 상기 제 1 전극막이 형성되는 것을 특징으로 하는 탄성표면파 장치의 제조방법.
- 제 1 항에 있어서, 상기 제 2 전극막의 언더라이닝에, 상기 제 1 전극막과 제 2 전극막의 밀착성을 높이기 위한 밀착 전극층을 형성하는 공정을 더 구비하고, 상기 밀착 전극층상에 상기 제 2 전극막이 형성되는 것을 특징으로 하는 탄성표면파 장치의 제조방법.
- 압전기판과,압전기판상에 형성되어 있으며, 인터디지탈 전극, 상기 인터디지탈 전극에 접속되도록 형성된 배선전극 및 전극패드를 갖는 전극과,상기 전극패드에 접합된 범프를 구비하고,상기 전극패드, 배선전극, 및 인터디지탈 전극의 버스바 부분을 포함하는 전극부분이 복수의 전극막을 적층한 구조를 가지며, 상기 복수의 전극막을 적층한 구조를 갖는 전극부분 이외를 덮도록 형성된 절연막을 더 구비하는 것을 특징으로 하는 탄성표면파 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2003-00345779 | 2003-10-03 | ||
JP2003345779A JP2005117151A (ja) | 2003-10-03 | 2003-10-03 | 弾性表面波装置の製造方法及び弾性表面波装置 |
Publications (2)
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KR20050033444A KR20050033444A (ko) | 2005-04-12 |
KR100766262B1 true KR100766262B1 (ko) | 2007-10-15 |
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KR1020040078234A KR100766262B1 (ko) | 2003-10-03 | 2004-10-01 | 탄성표면파 장치의 제조방법 및 탄성표면파 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7205700B2 (ko) |
EP (1) | EP1521362B1 (ko) |
JP (1) | JP2005117151A (ko) |
KR (1) | KR100766262B1 (ko) |
CN (1) | CN1604467A (ko) |
AT (1) | ATE422111T1 (ko) |
DE (1) | DE602004019265D1 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2005091500A1 (ja) * | 2004-03-18 | 2007-08-09 | 株式会社村田製作所 | 弾性表面波装置 |
JP2006287881A (ja) * | 2005-04-05 | 2006-10-19 | Alps Electric Co Ltd | 表面弾性波ディバイスの製造方法 |
US7454974B2 (en) * | 2006-09-29 | 2008-11-25 | General Electric Company | Probe system, ultrasound system and method of generating ultrasound |
US7605595B2 (en) * | 2006-09-29 | 2009-10-20 | General Electric Company | System for clearance measurement and method of operating the same |
JP4898396B2 (ja) * | 2006-11-17 | 2012-03-14 | 太陽誘電株式会社 | 弾性波デバイス |
JP5115184B2 (ja) * | 2007-12-25 | 2013-01-09 | パナソニック株式会社 | 弾性境界波デバイス、及びそれを用いたフィルタ、アンテナ共用器 |
JP2011244065A (ja) * | 2010-05-14 | 2011-12-01 | Murata Mfg Co Ltd | 弾性表面波装置の製造方法 |
JP5182437B2 (ja) | 2010-11-10 | 2013-04-17 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
CN104040887B (zh) | 2012-02-06 | 2016-08-17 | 株式会社村田制作所 | 滤波器装置 |
WO2015008351A1 (ja) | 2013-07-17 | 2015-01-22 | 株式会社村田製作所 | 電子部品及びその製造方法 |
DE112014003731B4 (de) | 2013-08-14 | 2022-07-28 | Murata Manufacturing Co., Ltd. | Bauelement für elastische Oberflächenwellen und elektronische Komponente |
JP6385690B2 (ja) * | 2014-03-05 | 2018-09-05 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
JP7037333B2 (ja) | 2017-11-13 | 2022-03-16 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ |
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- 2003-10-03 JP JP2003345779A patent/JP2005117151A/ja active Pending
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- 2004-08-30 US US10/930,231 patent/US7205700B2/en active Active
- 2004-10-01 EP EP04292343A patent/EP1521362B1/en active Active
- 2004-10-01 KR KR1020040078234A patent/KR100766262B1/ko active IP Right Grant
- 2004-10-01 AT AT04292343T patent/ATE422111T1/de not_active IP Right Cessation
- 2004-10-01 DE DE602004019265T patent/DE602004019265D1/de active Active
- 2004-10-08 CN CNA2004100849753A patent/CN1604467A/zh active Pending
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JPH08307197A (ja) * | 1995-05-08 | 1996-11-22 | Matsushita Electric Ind Co Ltd | 弾性表面波装置及びその製造方法 |
JPH09172341A (ja) * | 1995-12-19 | 1997-06-30 | Toshiba Corp | 弾性表面波デバイスおよびその製造方法 |
JP3435639B2 (ja) | 2000-04-13 | 2003-08-11 | 株式会社村田製作所 | 弾性表面波装置の製造方法及び弾性表面波装置 |
US20030174028A1 (en) * | 2000-10-23 | 2003-09-18 | Ryoichi Takayama | Surface acoustic wave filter |
JP2003078388A (ja) | 2001-08-30 | 2003-03-14 | Kyocera Corp | 弾性波装置及びその製造方法 |
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EP1521362A2 (en) | 2005-04-06 |
CN1604467A (zh) | 2005-04-06 |
JP2005117151A (ja) | 2005-04-28 |
DE602004019265D1 (de) | 2009-03-19 |
US20050071971A1 (en) | 2005-04-07 |
EP1521362B1 (en) | 2009-01-28 |
EP1521362A3 (en) | 2005-10-26 |
US7205700B2 (en) | 2007-04-17 |
ATE422111T1 (de) | 2009-02-15 |
KR20050033444A (ko) | 2005-04-12 |
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