KR100758965B1 - 반도체 웨이퍼용 열처리 치구 - Google Patents
반도체 웨이퍼용 열처리 치구 Download PDFInfo
- Publication number
- KR100758965B1 KR100758965B1 KR1020057018427A KR20057018427A KR100758965B1 KR 100758965 B1 KR100758965 B1 KR 100758965B1 KR 1020057018427 A KR1020057018427 A KR 1020057018427A KR 20057018427 A KR20057018427 A KR 20057018427A KR 100758965 B1 KR100758965 B1 KR 100758965B1
- Authority
- KR
- South Korea
- Prior art keywords
- heat treatment
- semiconductor wafer
- treatment jig
- diameter
- jig
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- 238000010438 heat treatment Methods 0.000 claims abstract description 190
- 230000003746 surface roughness Effects 0.000 claims abstract description 50
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 31
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021426 porous silicon Inorganic materials 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 abstract description 32
- 238000005259 measurement Methods 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 153
- 230000035882 stress Effects 0.000 description 17
- 238000005422 blasting Methods 0.000 description 13
- 230000001105 regulatory effect Effects 0.000 description 8
- 238000011282 treatment Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (13)
- 반도체 웨이퍼를 그 상면에 탑재하여 열처리하는 원판형상의 열처리 치구(治具)에 있어서,원판형상의 직경은 탑재되는 반도체 웨이퍼의 직경의 60% 이상으로 되고,그 두께는 1.0mm 이상, 10mm 이하이고,상기 반도체 웨이퍼와 접촉하는 면의 표면조도(Ra값)는 0.1㎛ 이상, 100㎛ 이하이며,그 평탄도는, 동심원 방향의 평탄도로서 0.1mm 이하이고, 또한 직경 방향의 평탄도로서 0.2mm 이하이고,또한, 상기 반도체 웨이퍼와 접촉하는 면에 복수의 돌출부 영역을 설치하고, 중심에 대하여 점대칭으로 배치한 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제1항에 있어서,상기 반도체 웨이퍼와 접촉하는 면의 직경은 그 반도체 웨이퍼의 직경의 60% 이상인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제1항에 있어서,상기 반도체 웨이퍼와 접촉하는 면은 링(ring) 형상이며, 그 외경은 상기 반도체 웨이퍼의 직경의 60% 이상인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 삭제
- 제1항에 있어서,상기 복수의 돌출부 영역의 평면형상은, 직경이 5.Omm 이상, 30.Omm 이하의 원형인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제1항에 있어서,기재재료(基材材料)가 실리콘 함침 실리콘 카바이드, 실리콘 카바이드, 다공질 실리콘 카바이드, 석영, 실리콘, 그래파이트 및 글래시 카본 중 어느 하나로 이루어지는 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제6항에 있어서,상기 기재재료에 막 두께가 10㎛ 이상, 150㎛ 이하의 실리콘 카바이드(SiC)를 더 코팅하는 것을 특징으로 하는 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 반도체 웨이퍼를 그 상면에 탑재하여 열처리하는 원판형상의 열처리 치구에 있어서,원판형상의 직경은 탑재되는 반도체 웨이퍼의 직경의 60% 이상이고,그 두께는 1.Omm 이상, 10mm 이하이고,상기 반도체 웨이퍼와 접촉하는 면의 표면조도(Ra값)는 0.05㎛ 이상, 100㎛ 이하이며,상기 반도체 웨이퍼와 접촉하는 표면을 다수영역으로 분할하고, 영역마다 최대 높이를 측정하고, 각 영역의 최대 높이와 상기 측정값으로부터 구해진 가상평균값 면과의 차이가 50㎛ 이하인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제8항에 있어서,상기 반도체 웨이퍼와 접촉하는 면의 직경은 그 반도체 웨이퍼의 직경의 60% 이상인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제8항에 있어서,상기 반도체 웨이퍼와 접촉하는 면은 링 형상이며, 그 외경은 상기 반도체 웨이퍼의 직경의 60% 이상인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제8항 또는 제9항에 있어서,기재재료는 실리콘 함침 실리콘 카바이드, 실리콘 카바이드, 다공질 실리콘 카바이드, 석영, 실리콘, 그래파이트 및 글래시 카본 중 어느 하나로 이루어지는 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제11항에 있어서,상기 기재재료에 막 두께가 10㎛ 이상, 150㎛ 이하의 실리콘 카바이드(SiC)를 더 코팅하는 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제10항에 있어서,기재재료는 실리콘 함침 실리콘 카바이드, 실리콘 카바이드, 다공질 실리콘 카바이드, 석영, 실리콘, 그래파이트 및 글래시 카본 중 어느 하나로 이루어지는 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00099709 | 2003-04-02 | ||
JP2003099709 | 2003-04-02 | ||
PCT/JP2004/003442 WO2004090967A1 (ja) | 2003-04-02 | 2004-03-15 | 半導体ウェーハ用熱処理治具 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050115939A KR20050115939A (ko) | 2005-12-08 |
KR100758965B1 true KR100758965B1 (ko) | 2007-09-14 |
Family
ID=33156706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057018427A KR100758965B1 (ko) | 2003-04-02 | 2004-03-15 | 반도체 웨이퍼용 열처리 치구 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7331780B2 (ko) |
EP (1) | EP1615261B8 (ko) |
JP (1) | JPWO2004090967A1 (ko) |
KR (1) | KR100758965B1 (ko) |
CN (1) | CN100517612C (ko) |
TW (1) | TWI242831B (ko) |
WO (1) | WO2004090967A1 (ko) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4534619B2 (ja) * | 2004-06-21 | 2010-09-01 | 株式会社Sumco | 半導体シリコン基板用熱処理治具 |
US7891975B2 (en) * | 2004-08-06 | 2011-02-22 | Hitachi Kokusai Electric, Inc. | Heat treatment apparatus and method of manufacturing substrate |
US7625205B2 (en) * | 2004-09-30 | 2009-12-01 | Hitachi Kokusai Electric Inc. | Heat treatment apparatus and method of manufacturing substrates |
WO2006043531A1 (ja) * | 2004-10-19 | 2006-04-27 | Canon Anelva Corporation | 基板支持・搬送用トレイ |
US20060144337A1 (en) * | 2005-01-06 | 2006-07-06 | Hsien-Che Teng | Heater for heating a wafer and method for preventing contamination of the heater |
DE102005013831B4 (de) | 2005-03-24 | 2008-10-16 | Siltronic Ag | Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe |
JP5050363B2 (ja) * | 2005-08-12 | 2012-10-17 | 株式会社Sumco | 半導体シリコン基板用熱処理治具およびその製作方法 |
US7622803B2 (en) * | 2005-08-30 | 2009-11-24 | Cree, Inc. | Heat sink assembly and related methods for semiconductor vacuum processing systems |
EP1772901B1 (en) * | 2005-10-07 | 2012-07-25 | Rohm and Haas Electronic Materials, L.L.C. | Wafer holding article and method for semiconductor processing |
JP2007201417A (ja) * | 2005-12-28 | 2007-08-09 | Tokyo Electron Ltd | 熱処理用ボート及び縦型熱処理装置 |
JP2007281030A (ja) * | 2006-04-03 | 2007-10-25 | Sumco Corp | シリコンウェーハの保持方法 |
JP2008021888A (ja) * | 2006-07-14 | 2008-01-31 | Nec Electronics Corp | 治具装置 |
JP2008108926A (ja) * | 2006-10-26 | 2008-05-08 | Bridgestone Corp | ウェハ熱処理用治具 |
JP4864757B2 (ja) * | 2007-02-14 | 2012-02-01 | 東京エレクトロン株式会社 | 基板載置台及びその表面処理方法 |
CN101978473B (zh) * | 2008-03-20 | 2015-11-25 | 应用材料公司 | 具有滚轧成型表面的基座和制造所述基座的方法 |
US8042697B2 (en) * | 2008-06-30 | 2011-10-25 | Memc Electronic Materials, Inc. | Low thermal mass semiconductor wafer support |
JP5000597B2 (ja) * | 2008-07-22 | 2012-08-15 | Sumco Techxiv株式会社 | 半導体ウェーハの支持具 |
EP2562290A3 (en) * | 2008-08-29 | 2016-10-19 | Veeco Instruments Inc. | Wafer carrier with varying thermal resistance |
JP5498678B2 (ja) * | 2008-09-25 | 2014-05-21 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの製造方法 |
US8486726B2 (en) * | 2009-12-02 | 2013-07-16 | Veeco Instruments Inc. | Method for improving performance of a substrate carrier |
US8420554B2 (en) | 2010-05-03 | 2013-04-16 | Memc Electronic Materials, Inc. | Wafer support ring |
US9227295B2 (en) | 2011-05-27 | 2016-01-05 | Corning Incorporated | Non-polished glass wafer, thinning system and method for using the non-polished glass wafer to thin a semiconductor wafer |
US9464362B2 (en) * | 2012-07-18 | 2016-10-11 | Deca Technologies Inc. | Magnetically sealed wafer plating jig system and method |
US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
TWI602779B (zh) * | 2013-03-28 | 2017-10-21 | 三菱綜合材料股份有限公司 | 矽構材及矽構材之製造方法 |
JP5991284B2 (ja) * | 2013-08-23 | 2016-09-14 | 信越半導体株式会社 | シリコンウェーハの熱処理方法 |
CN111584396B (zh) * | 2013-11-06 | 2023-09-01 | 应用材料公司 | 溶胶凝胶涂布的支撑环 |
CN103743239B (zh) | 2013-12-27 | 2015-05-20 | 深圳市华星光电技术有限公司 | 石英卡夹装置及其制作方法与带该石英卡夹装置的oled高温炉 |
JP6335587B2 (ja) * | 2014-03-31 | 2018-05-30 | 株式会社荏原製作所 | 基板保持機構、基板搬送装置、半導体製造装置 |
JP6601493B2 (ja) * | 2015-05-28 | 2019-11-06 | Agc株式会社 | ガラス基板、および積層基板 |
JP2017126717A (ja) * | 2016-01-15 | 2017-07-20 | 東京エレクトロン株式会社 | 載置台の表面処理方法、載置台及びプラズマ処理装置 |
JP7030604B2 (ja) * | 2018-04-19 | 2022-03-07 | 三菱電機株式会社 | ウエハボートおよびその製造方法 |
CN111942882B (zh) * | 2020-08-13 | 2022-06-10 | 长春中科长光时空光电技术有限公司 | 一种晶圆卸取设备 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321543A (ja) * | 1997-05-20 | 1998-12-04 | Sumitomo Metal Ind Ltd | ウェハ支持体及び縦型ボート |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5242501A (en) * | 1982-09-10 | 1993-09-07 | Lam Research Corporation | Susceptor in chemical vapor deposition reactors |
DE8321679U1 (de) * | 1983-07-27 | 1983-12-01 | Norton Co., 01606 Worcester, Mass. | Platte aus feuerfestem material |
NL9300389A (nl) * | 1993-03-04 | 1994-10-03 | Xycarb Bv | Substraatdrager. |
US5514439A (en) * | 1994-10-14 | 1996-05-07 | Sibley; Thomas | Wafer support fixtures for rapid thermal processing |
US5761023A (en) * | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
US6001183A (en) * | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
JP3692697B2 (ja) * | 1997-03-25 | 2005-09-07 | 三菱住友シリコン株式会社 | ウェハ支持体及び縦型ボート |
JPH113865A (ja) | 1997-04-15 | 1999-01-06 | Sumitomo Metal Ind Ltd | ウエハー積載用ボート及びその製造方法 |
US6264467B1 (en) * | 1999-04-14 | 2001-07-24 | Applied Materials, Inc. | Micro grooved support surface for reducing substrate wear and slip formation |
KR100427916B1 (ko) * | 1999-09-03 | 2004-04-28 | 미쯔이 죠센 가부시키가이샤 | 웨이퍼 보유 지지구 |
JP2001284275A (ja) * | 2000-03-29 | 2001-10-12 | Toshiba Ceramics Co Ltd | CVD−SiC膜被覆半導体熱処理用部材 |
US6634882B2 (en) * | 2000-12-22 | 2003-10-21 | Asm America, Inc. | Susceptor pocket profile to improve process performance |
US6896738B2 (en) * | 2001-10-30 | 2005-05-24 | Cree, Inc. | Induction heating devices and methods for controllably heating an article |
JP2003197722A (ja) | 2001-12-26 | 2003-07-11 | Toshiba Ceramics Co Ltd | 半導体ウェーハ熱処理用治具及びこれを用いた熱処理用装置並びに半導体ウェーハ熱処理用治具の製造方法 |
US7256375B2 (en) * | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
US6709267B1 (en) * | 2002-12-27 | 2004-03-23 | Asm America, Inc. | Substrate holder with deep annular groove to prevent edge heat loss |
JP4534619B2 (ja) * | 2004-06-21 | 2010-09-01 | 株式会社Sumco | 半導体シリコン基板用熱処理治具 |
-
2004
- 2004-03-15 KR KR1020057018427A patent/KR100758965B1/ko active IP Right Grant
- 2004-03-15 JP JP2005505180A patent/JPWO2004090967A1/ja active Pending
- 2004-03-15 WO PCT/JP2004/003442 patent/WO2004090967A1/ja active Application Filing
- 2004-03-15 CN CNB2004800093087A patent/CN100517612C/zh not_active Expired - Lifetime
- 2004-03-15 EP EP04720720.4A patent/EP1615261B8/en not_active Expired - Lifetime
- 2004-03-24 TW TW093107988A patent/TWI242831B/zh not_active IP Right Cessation
-
2005
- 2005-09-30 US US11/239,096 patent/US7331780B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321543A (ja) * | 1997-05-20 | 1998-12-04 | Sumitomo Metal Ind Ltd | ウェハ支持体及び縦型ボート |
Also Published As
Publication number | Publication date |
---|---|
WO2004090967A1 (ja) | 2004-10-21 |
US20060078839A1 (en) | 2006-04-13 |
EP1615261A4 (en) | 2010-05-19 |
US7331780B2 (en) | 2008-02-19 |
EP1615261A1 (en) | 2006-01-11 |
EP1615261B1 (en) | 2019-05-08 |
CN100517612C (zh) | 2009-07-22 |
TW200426969A (en) | 2004-12-01 |
EP1615261B8 (en) | 2019-09-18 |
CN1771588A (zh) | 2006-05-10 |
JPWO2004090967A1 (ja) | 2006-07-06 |
TWI242831B (en) | 2005-11-01 |
KR20050115939A (ko) | 2005-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100758965B1 (ko) | 반도체 웨이퍼용 열처리 치구 | |
JP4534619B2 (ja) | 半導体シリコン基板用熱処理治具 | |
KR100816180B1 (ko) | 반도체 기판용 열처리 치구 및 반도체 기판의 열처리 방법 | |
US7256375B2 (en) | Susceptor plate for high temperature heat treatment | |
US7163393B2 (en) | Heat treatment jig for semiconductor silicon substrate | |
US7582166B2 (en) | Holder for supporting wafers during semiconductor manufacture | |
KR101347696B1 (ko) | 종형 열처리용 보트 및 이것을 이용한 반도체 웨이퍼의 열처리 방법 | |
TWI471970B (zh) | A wafer-supporting jig and a method for manufacturing a crystal tube for a vertical type heat treatment and a wafer support | |
US8003918B2 (en) | Vertical heat treatment boat and heat treatment method for semiconductor wafer | |
KR100607890B1 (ko) | 막두께 측정용 모니터 웨이퍼 | |
KR20010062144A (ko) | 열처리용 기판 보유 지지구, 기판 열처리 장치 및 기판의열처리 방법 | |
KR100841196B1 (ko) | 반도체 실리콘 기판용 열처리 지그 | |
JP3909720B2 (ja) | 半導体熱処理用ガラス状カーボン製ダミーウエハ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
G170 | Re-publication after modification of scope of protection [patent] | ||
FPAY | Annual fee payment |
Payment date: 20120831 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20130830 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140901 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150828 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160902 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170901 Year of fee payment: 11 |