JP5000597B2 - 半導体ウェーハの支持具 - Google Patents
半導体ウェーハの支持具 Download PDFInfo
- Publication number
- JP5000597B2 JP5000597B2 JP2008188290A JP2008188290A JP5000597B2 JP 5000597 B2 JP5000597 B2 JP 5000597B2 JP 2008188290 A JP2008188290 A JP 2008188290A JP 2008188290 A JP2008188290 A JP 2008188290A JP 5000597 B2 JP5000597 B2 JP 5000597B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- support
- semiconductor wafer
- support tool
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 128
- 238000005452 bending Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
10a 裏面部
15 正六角形
20 支持具
21 第1支持具
21a,22a 端部
21b,22b 頂点部
22 第2支持具
C 中心
L 配置間隔
R1,R2 内角
T1,T2 頂点
r 半径
Claims (4)
- 直径が450mmであり、かつ、厚みが800μm以上の半導体ウェーハの裏面部を下方から線接触して支持する半導体ウェーハの支持具であって、
前記支持具は、前記半導体ウェーハの中心に一致する中心を有する仮想の正六角形を構成する6つの辺のうち、対向する2組以上の辺の位置に配置される棒状部材からなり、
前記正六角形の頂点は、前記半導体ウェーハの中心から当該半導体ウェーハの半径の0.8〜0.9倍の領域内に配置されることを特徴とする半導体ウェーハの支持具。 - 前記支持具は、前記正六角形の一の内角を挟む二辺上に配置された第1支持具と、前記内角と対向する内角を挟む二辺上に配置された第2支持具と、からなることを特徴とする請求項1に記載の半導体ウェーハの支持具。
- 前記第1支持具及び前記第2支持具の両端部は、前記半導体ウェーハの外周部から突出して配置されることを特徴とする請求項2に記載の半導体ウェーハの支持具。
- 前記第1支持具及び前記第2支持具の断面形状が三角形であることを特徴とする請求項2又は3に記載の半導体ウェーハの支持具。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008188290A JP5000597B2 (ja) | 2008-07-22 | 2008-07-22 | 半導体ウェーハの支持具 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008188290A JP5000597B2 (ja) | 2008-07-22 | 2008-07-22 | 半導体ウェーハの支持具 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010027893A JP2010027893A (ja) | 2010-02-04 |
JP5000597B2 true JP5000597B2 (ja) | 2012-08-15 |
Family
ID=41733428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008188290A Active JP5000597B2 (ja) | 2008-07-22 | 2008-07-22 | 半導体ウェーハの支持具 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5000597B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016062942A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社ディスコ | ウェーハ搬送機構 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09298236A (ja) * | 1996-04-30 | 1997-11-18 | Shinetsu Quartz Prod Co Ltd | 基板支持治具及び基板支持手段 |
JPH113865A (ja) * | 1997-04-15 | 1999-01-06 | Sumitomo Metal Ind Ltd | ウエハー積載用ボート及びその製造方法 |
JPH11130181A (ja) * | 1997-10-24 | 1999-05-18 | Sumitomo Metal Ind Ltd | ウエハー積載用ボート |
JP2002033378A (ja) * | 2000-07-19 | 2002-01-31 | Mimasu Semiconductor Industry Co Ltd | ウェーハハンドリング装置 |
JP4133489B2 (ja) * | 2003-03-24 | 2008-08-13 | 大日本スクリーン製造株式会社 | 基板待機装置およびそれを備えた基板処理装置 |
CN100517612C (zh) * | 2003-04-02 | 2009-07-22 | 株式会社上睦可 | 半导体晶片用热处理夹具 |
JP2007281030A (ja) * | 2006-04-03 | 2007-10-25 | Sumco Corp | シリコンウェーハの保持方法 |
JP2007329173A (ja) * | 2006-06-06 | 2007-12-20 | Covalent Materials Corp | 縦型ウェーハボート |
-
2008
- 2008-07-22 JP JP2008188290A patent/JP5000597B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010027893A (ja) | 2010-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4622859B2 (ja) | 半導体基板用熱処理治具および半導体基板の熱処理方法 | |
JP6208588B2 (ja) | 支持機構及び基板処理装置 | |
KR100815574B1 (ko) | 침지 처리 시스템에서 한 세트의 반도체 웨이퍼를 핸들링하는 에지 파지장치 및 방법 | |
JP4707749B2 (ja) | 基板交換方法及び基板処理装置 | |
WO2009107254A1 (ja) | 裏面支持構造付きウエハ収納容器 | |
US20150270150A1 (en) | Boat | |
JP5000597B2 (ja) | 半導体ウェーハの支持具 | |
US11424146B2 (en) | Substrate processing apparatus and temperature measurement unit | |
JP2000150402A (ja) | 基板支持治具 | |
JP6290585B2 (ja) | バッチ式基板処理装置 | |
JP4571089B2 (ja) | 基板支持部材、基板焼成炉、基板搬送装置および基板処理方法 | |
JP5205737B2 (ja) | シリコンウェーハの保持方法および保持治具 | |
US9401295B2 (en) | Load port apparatus and clamping device to be used for the same | |
JP2010050130A (ja) | 半導体ウェーハの支持具 | |
KR20010062144A (ko) | 열처리용 기판 보유 지지구, 기판 열처리 장치 및 기판의열처리 방법 | |
JP4826070B2 (ja) | 半導体ウエーハの熱処理方法 | |
JP3507624B2 (ja) | 熱処理用ボ−ト及び熱処理装置 | |
JP5583516B2 (ja) | ワーク積載装置 | |
TW201201318A (en) | Wafer support ring | |
JP4029611B2 (ja) | ウェーハ支持具 | |
JP2007281030A (ja) | シリコンウェーハの保持方法 | |
JP2014175404A (ja) | 基板処理装置 | |
JP6276090B2 (ja) | 搬送装置、搬送システム | |
JP7347267B2 (ja) | 半導体製造装置 | |
JP2007184476A (ja) | 基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110628 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120511 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120515 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120516 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5000597 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150525 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |