KR100747954B1 - 구리 연마에 사용되는 화학 기계 연마용 수계 분산체 - Google Patents

구리 연마에 사용되는 화학 기계 연마용 수계 분산체 Download PDF

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Publication number
KR100747954B1
KR100747954B1 KR1020010037921A KR20010037921A KR100747954B1 KR 100747954 B1 KR100747954 B1 KR 100747954B1 KR 1020010037921 A KR1020010037921 A KR 1020010037921A KR 20010037921 A KR20010037921 A KR 20010037921A KR 100747954 B1 KR100747954 B1 KR 100747954B1
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KR
South Korea
Prior art keywords
polishing
aqueous dispersion
chemical mechanical
mechanical polishing
copper
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020010037921A
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English (en)
Korean (ko)
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KR20020002285A (ko
Inventor
히로유끼 야노
가꾸 미나미하바
마사유끼 모또나리
마사유끼 핫또리
노부오 가와하시
Original Assignee
가부시끼가이샤 도시바
제이에스알 가부시끼가이샤
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Publication of KR20020002285A publication Critical patent/KR20020002285A/ko
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Publication of KR100747954B1 publication Critical patent/KR100747954B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
KR1020010037921A 2000-06-30 2001-06-29 구리 연마에 사용되는 화학 기계 연마용 수계 분산체 Expired - Lifetime KR100747954B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000199462A JP3837277B2 (ja) 2000-06-30 2000-06-30 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
JP2000-199462 2000-06-30

Publications (2)

Publication Number Publication Date
KR20020002285A KR20020002285A (ko) 2002-01-09
KR100747954B1 true KR100747954B1 (ko) 2007-08-08

Family

ID=18697476

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010037921A Expired - Lifetime KR100747954B1 (ko) 2000-06-30 2001-06-29 구리 연마에 사용되는 화학 기계 연마용 수계 분산체

Country Status (6)

Country Link
US (1) US6653267B2 (enExample)
EP (1) EP1167482B1 (enExample)
JP (1) JP3837277B2 (enExample)
KR (1) KR100747954B1 (enExample)
DE (1) DE60127206T2 (enExample)
TW (1) TW538113B (enExample)

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JP4187497B2 (ja) * 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
JP4688397B2 (ja) * 2002-03-27 2011-05-25 泰弘 谷 キャリア粒子の取扱い方法および研磨剤
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US20040162011A1 (en) * 2002-08-02 2004-08-19 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device
US20040175942A1 (en) * 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
JP2004247605A (ja) 2003-02-14 2004-09-02 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法
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EP1477538B1 (en) * 2003-05-12 2007-07-25 JSR Corporation Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same
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US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
EP1648974A4 (en) * 2003-07-30 2008-04-23 Climax Engineered Mat Llc AQUEOUS SUSPENSIONS AND METHODS FOR THE CHEMICAL MECHANICAL PLANARIZATION OF COPPER
JP4759219B2 (ja) * 2003-11-25 2011-08-31 株式会社フジミインコーポレーテッド 研磨用組成物
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JP2005116987A (ja) * 2003-10-10 2005-04-28 Fujimi Inc 研磨用組成物
EP1670047B1 (en) * 2003-09-30 2010-04-07 Fujimi Incorporated Polishing composition and polishing method
JP3892846B2 (ja) * 2003-11-27 2007-03-14 株式会社東芝 Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
US7287314B2 (en) * 2004-02-27 2007-10-30 Hitachi Global Storage Technologies Netherlands B.V. One step copper damascene CMP process and slurry
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2006114729A (ja) * 2004-10-15 2006-04-27 Jsr Corp 余剰の金属層の除去方法
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
KR100601740B1 (ko) * 2005-04-11 2006-07-18 테크노세미켐 주식회사 투명도전막 식각용액
JP2008547202A (ja) * 2005-06-13 2008-12-25 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法
US20060283095A1 (en) * 2005-06-15 2006-12-21 Planar Solutions, Llc Fumed silica to colloidal silica conversion process
JP5345397B2 (ja) 2005-09-26 2013-11-20 プラナー ソリューションズ エルエルシー 化学機械研磨応用で使用するための超純度コロイド状シリカ
US20070144075A1 (en) * 2005-12-09 2007-06-28 Industrial Technology Research Institute Chemical mechanical polishing particles and slurry and method of producing the same
US20080153731A1 (en) * 2006-12-21 2008-06-26 Mark Buehler Clean chemistry composition, method of manufacturing same, and system making use of same
CN101974297A (zh) * 2010-11-12 2011-02-16 大连三达奥克化学股份有限公司 核/壳型复合纳米磨料铜化学机械抛光液
CN102766406B (zh) * 2012-06-25 2014-12-10 深圳市力合材料有限公司 一种去除半导体硅片表面缺陷的抛光组合物及其制备方法
KR102734246B1 (ko) * 2017-11-22 2024-11-25 바스프 에스이 화학 기계적 연마 조성물
KR102698381B1 (ko) * 2018-11-23 2024-08-23 솔브레인 주식회사 연마용 조성물 및 이를 이용하는 연마 방법

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Also Published As

Publication number Publication date
DE60127206T2 (de) 2007-12-20
DE60127206D1 (de) 2007-04-26
KR20020002285A (ko) 2002-01-09
EP1167482A3 (en) 2003-09-03
US20020016275A1 (en) 2002-02-07
TW538113B (en) 2003-06-21
EP1167482A2 (en) 2002-01-02
JP3837277B2 (ja) 2006-10-25
US6653267B2 (en) 2003-11-25
EP1167482B1 (en) 2007-03-14
JP2002012854A (ja) 2002-01-15

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