EP1648974A4 - Slurries and methods for chemical-mechanical planarization of copper - Google Patents
Slurries and methods for chemical-mechanical planarization of copperInfo
- Publication number
- EP1648974A4 EP1648974A4 EP04779276A EP04779276A EP1648974A4 EP 1648974 A4 EP1648974 A4 EP 1648974A4 EP 04779276 A EP04779276 A EP 04779276A EP 04779276 A EP04779276 A EP 04779276A EP 1648974 A4 EP1648974 A4 EP 1648974A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- slurries
- copper
- chemical
- methods
- mechanical planarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10009005A EP2256171A1 (en) | 2003-07-30 | 2004-07-27 | Methods for chemical-mechanical planarization of copper |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/631,698 US20050022456A1 (en) | 2003-07-30 | 2003-07-30 | Polishing slurry and method for chemical-mechanical polishing of copper |
US10/846,718 US20050026444A1 (en) | 2003-07-30 | 2004-05-13 | Slurry and method for chemical-mechanical planarization of copper |
PCT/US2004/024143 WO2005012451A2 (en) | 2003-07-30 | 2004-07-27 | Slurries and methods for chemical-mechanical planarization of copper |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1648974A2 EP1648974A2 (en) | 2006-04-26 |
EP1648974A4 true EP1648974A4 (en) | 2008-04-23 |
Family
ID=34119220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04779276A Withdrawn EP1648974A4 (en) | 2003-07-30 | 2004-07-27 | Slurries and methods for chemical-mechanical planarization of copper |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1648974A4 (en) |
JP (1) | JP2007500943A (en) |
KR (1) | KR20060118396A (en) |
WO (1) | WO2005012451A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
US8017524B2 (en) * | 2008-05-23 | 2011-09-13 | Cabot Microelectronics Corporation | Stable, high rate silicon slurry |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001032799A1 (en) * | 1999-11-04 | 2001-05-10 | Nanogram Corporation | Particle dispersions |
EP1167482A2 (en) * | 2000-06-30 | 2002-01-02 | Kabushiki Kaisha Toshiba | Aqueous dispersion for chemical mechanical polishing used for polishing of copper |
US6551172B1 (en) * | 1997-10-31 | 2003-04-22 | Canon Kabushiki Kaisha | Polishing apparatus and polishing method |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6330321A (en) * | 1986-07-19 | 1988-02-09 | Tokyo Tungsten Co Ltd | Molybdenum dioxide powder and its production |
US6290735B1 (en) * | 1997-10-31 | 2001-09-18 | Nanogram Corporation | Abrasive particles for surface polishing |
US20090255189A1 (en) * | 1998-08-19 | 2009-10-15 | Nanogram Corporation | Aluminum oxide particles |
JP2000158331A (en) * | 1997-12-10 | 2000-06-13 | Canon Inc | Precise polishing method and device for substrate |
JPH11204474A (en) * | 1998-01-09 | 1999-07-30 | Sony Corp | Polishing of fluorine-containing film |
JP2000108004A (en) * | 1998-10-07 | 2000-04-18 | Canon Inc | Grinding device |
JP4273475B2 (en) * | 1999-09-21 | 2009-06-03 | 株式会社フジミインコーポレーテッド | Polishing composition |
WO2001021724A1 (en) * | 1999-09-23 | 2001-03-29 | Rodel Holdings, Inc. | Slurry solution for polishing copper or tungsten |
US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
JP3490038B2 (en) * | 1999-12-28 | 2004-01-26 | Necエレクトロニクス株式会社 | Metal wiring formation method |
JP3945964B2 (en) * | 2000-06-01 | 2007-07-18 | 株式会社ルネサステクノロジ | Abrasive, polishing method and method for manufacturing semiconductor device |
US6569222B2 (en) * | 2000-06-09 | 2003-05-27 | Harper International Corporation | Continuous single stage process for the production of molybdenum metal |
JP4743941B2 (en) * | 2000-06-30 | 2011-08-10 | Jsr株式会社 | Aqueous dispersion for chemical mechanical polishing |
JP2002184734A (en) * | 2000-12-19 | 2002-06-28 | Tokuyama Corp | Manufacturing method of semiconductor device |
JP3507794B2 (en) * | 2000-12-25 | 2004-03-15 | 日本電気株式会社 | Method for manufacturing semiconductor device |
-
2004
- 2004-07-27 JP JP2006521994A patent/JP2007500943A/en active Pending
- 2004-07-27 WO PCT/US2004/024143 patent/WO2005012451A2/en active Application Filing
- 2004-07-27 EP EP04779276A patent/EP1648974A4/en not_active Withdrawn
- 2004-07-27 KR KR1020067000223A patent/KR20060118396A/en not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6551172B1 (en) * | 1997-10-31 | 2003-04-22 | Canon Kabushiki Kaisha | Polishing apparatus and polishing method |
WO2001032799A1 (en) * | 1999-11-04 | 2001-05-10 | Nanogram Corporation | Particle dispersions |
EP1167482A2 (en) * | 2000-06-30 | 2002-01-02 | Kabushiki Kaisha Toshiba | Aqueous dispersion for chemical mechanical polishing used for polishing of copper |
Non-Patent Citations (3)
Title |
---|
ABCR GMBH&CO ET AL: "AVOCADO/ABCR Catalogue 2000-2001 : Chemicals for Research and Development", AVOCADO/ABCR CATALOGUE, XX, XX, 2001, pages 774, XP002337567 * |
FAYOLLE M ET AL: "Copper CMP evaluation: planarization issues", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 37-38, 1 November 1997 (1997-11-01), pages 135 - 141, XP004103556, ISSN: 0167-9317, DOI: 10.1016/S0167-9317(97)00104-4 * |
LEE E H ET AL: "The oxidative-dissolution behaviors of fission products in a Na2CO3â H2O2 solution", JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, KLUWER ACADEMIC PUBLISHERS, DO, vol. 281, no. 3, 2 July 2009 (2009-07-02), pages 339 - 346, XP019751193, ISSN: 1588-2780, DOI: 10.1007/S10967-009-0018-6 * |
Also Published As
Publication number | Publication date |
---|---|
WO2005012451A2 (en) | 2005-02-10 |
EP1648974A2 (en) | 2006-04-26 |
KR20060118396A (en) | 2006-11-23 |
WO2005012451A3 (en) | 2006-05-18 |
JP2007500943A (en) | 2007-01-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20051227 |
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AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL HR LT LV MK |
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PUAK | Availability of information related to the publication of the international search report |
Free format text: ORIGINAL CODE: 0009015 |
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A4 | Supplementary search report drawn up and despatched |
Effective date: 20080320 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/321 20060101ALI20080314BHEP Ipc: C23F 3/04 20060101ALI20080314BHEP Ipc: C01G 39/02 20060101ALI20080314BHEP Ipc: B24B 1/00 20060101ALI20080314BHEP Ipc: C09G 1/04 20060101ALI20080314BHEP Ipc: C09G 1/02 20060101AFI20050215BHEP |
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17Q | First examination report despatched |
Effective date: 20090915 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20130201 |