AU2001296997A1 - Slurry for chemical-mechanical polishing copper damascene structures - Google Patents

Slurry for chemical-mechanical polishing copper damascene structures

Info

Publication number
AU2001296997A1
AU2001296997A1 AU2001296997A AU9699701A AU2001296997A1 AU 2001296997 A1 AU2001296997 A1 AU 2001296997A1 AU 2001296997 A AU2001296997 A AU 2001296997A AU 9699701 A AU9699701 A AU 9699701A AU 2001296997 A1 AU2001296997 A1 AU 2001296997A1
Authority
AU
Australia
Prior art keywords
slurry
chemical
mechanical polishing
damascene structures
copper damascene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001296997A
Inventor
Jason Keleher
Yuzhuo Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vibrantz Corp
Original Assignee
Ferro Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferro Corp filed Critical Ferro Corp
Publication of AU2001296997A1 publication Critical patent/AU2001296997A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AU2001296997A 2000-10-19 2001-10-05 Slurry for chemical-mechanical polishing copper damascene structures Abandoned AU2001296997A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/692,729 US6508953B1 (en) 2000-10-19 2000-10-19 Slurry for chemical-mechanical polishing copper damascene structures
US09692729 2000-10-19
PCT/US2001/042524 WO2002033023A1 (en) 2000-10-19 2001-10-05 Slurry for chemical-mechanical polishing copper damascene structures

Publications (1)

Publication Number Publication Date
AU2001296997A1 true AU2001296997A1 (en) 2002-04-29

Family

ID=24781768

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001296997A Abandoned AU2001296997A1 (en) 2000-10-19 2001-10-05 Slurry for chemical-mechanical polishing copper damascene structures

Country Status (7)

Country Link
US (2) US6508953B1 (en)
EP (1) EP1337601A4 (en)
JP (1) JP4068453B2 (en)
KR (1) KR20030048058A (en)
CN (1) CN100355858C (en)
AU (1) AU2001296997A1 (en)
WO (1) WO2002033023A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4637398B2 (en) * 2001-04-18 2011-02-23 株式会社フジミインコーポレーテッド Polishing composition and polishing method using the same
JP4707864B2 (en) * 2001-04-18 2011-06-22 株式会社フジミインコーポレーテッド Polishing composition and polishing method using the same
JP2003338469A (en) * 2002-05-21 2003-11-28 Fujitsu Ltd Abrasive, polishing method, and cleaning method
WO2005066325A2 (en) * 2003-12-31 2005-07-21 Ekc Technology, Inc. Cleaner compositions containing free radical quenchers
US7287314B2 (en) * 2004-02-27 2007-10-30 Hitachi Global Storage Technologies Netherlands B.V. One step copper damascene CMP process and slurry
KR20060016498A (en) * 2004-08-18 2006-02-22 삼성전자주식회사 Slurry composition, method for forming the slurry composition and method for polishing an object using the slurry composition
US7476620B2 (en) * 2005-03-25 2009-01-13 Dupont Air Products Nanomaterials Llc Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
US7161795B1 (en) 2005-09-26 2007-01-09 Ferro Corporation COG dielectric composition for use with copper electrodes
ATE553223T1 (en) * 2006-02-28 2012-04-15 Advanced Interconnect Materials Llc SEMICONDUCTOR DEVICE, METHOD OF PRODUCTION THEREOF, AND SPUTTERING OF TARGET MATERIAL FOR USE IN THE METHOD
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
US20090004463A1 (en) * 2007-06-27 2009-01-01 Michael Haverty Reducing resistivity in metal interconnects using interface control
US20090047787A1 (en) * 2007-07-31 2009-02-19 Yuzhuo Li Slurry containing multi-oxidizer and nano-abrasives for tungsten CMP
US20090061630A1 (en) * 2007-08-30 2009-03-05 Dupont Air Products Nanomaterials Llc Method for Chemical Mechanical Planarization of A Metal-containing Substrate
JP5319968B2 (en) * 2008-06-18 2013-10-16 株式会社Ａｄｅｋａ Polishing composition for CMP
CN101333419B (en) * 2008-08-05 2011-06-29 清华大学 Abrasive-free chemical mechanical polishing solution of integrated circuit copper
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
CN104449398B (en) * 2014-11-25 2017-06-23 河北工业大学 A kind of alkaline chemical mechanical polishing liquid suitable for cobalt barrier layer
US10508220B2 (en) 2015-07-10 2019-12-17 Ferro Corporation Slurry composition and additives and method for polishing organic polymer-based ophthalmic substrates
US10544332B2 (en) 2015-08-19 2020-01-28 Ferro Corporation Slurry composition and method of use
KR102226055B1 (en) 2016-08-26 2021-03-10 페로 코포레이션 Slurry composition and optional silica polishing method
US11417566B2 (en) * 2018-07-31 2022-08-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device structure with interconnect structure and method for forming the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477285A (en) 1981-08-31 1984-10-16 Ault Frederick K Method for treating an oxidizable surface
US4789648A (en) 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
JP3397501B2 (en) 1994-07-12 2003-04-14 株式会社東芝 Abrasive and polishing method
US5676587A (en) 1995-12-06 1997-10-14 International Business Machines Corporation Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US5700383A (en) 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5866031A (en) 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
TW432518B (en) * 1997-04-03 2001-05-01 Memc Electronic Materials Spa Flattening process for semiconductor wafers
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6001730A (en) 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US5985748A (en) 1997-12-01 1999-11-16 Motorola, Inc. Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
JP2002511650A (en) 1998-04-10 2002-04-16 フェロー コーポレイション Slurry for polishing chemical-mechanical metal surfaces
US6017803A (en) 1998-06-24 2000-01-25 Chartered Semiconductor Manufacturing, Ltd. Method to prevent dishing in chemical mechanical polishing
US6004188A (en) 1998-09-10 1999-12-21 Chartered Semiconductor Manufacturing Ltd. Method for forming copper damascene structures by using a dual CMP barrier layer
EP1150341A4 (en) * 1998-12-28 2005-06-08 Hitachi Chemical Co Ltd Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
US6503418B2 (en) * 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6123088A (en) * 1999-12-20 2000-09-26 Chartered Semiconducotor Manufacturing Ltd. Method and cleaner composition for stripping copper containing residue layers
US6242351B1 (en) * 1999-12-27 2001-06-05 General Electric Company Diamond slurry for chemical-mechanical planarization of semiconductor wafers

Also Published As

Publication number Publication date
CN100355858C (en) 2007-12-19
JP2004511916A (en) 2004-04-15
EP1337601A4 (en) 2005-09-14
US6508953B1 (en) 2003-01-21
WO2002033023A1 (en) 2002-04-25
EP1337601A1 (en) 2003-08-27
US20030098434A1 (en) 2003-05-29
US6660639B2 (en) 2003-12-09
KR20030048058A (en) 2003-06-18
CN1705733A (en) 2005-12-07
JP4068453B2 (en) 2008-03-26

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