AU2001296713A1 - Chemical-mechanical polishing slurry and method - Google Patents
Chemical-mechanical polishing slurry and methodInfo
- Publication number
- AU2001296713A1 AU2001296713A1 AU2001296713A AU9671301A AU2001296713A1 AU 2001296713 A1 AU2001296713 A1 AU 2001296713A1 AU 2001296713 A AU2001296713 A AU 2001296713A AU 9671301 A AU9671301 A AU 9671301A AU 2001296713 A1 AU2001296713 A1 AU 2001296713A1
- Authority
- AU
- Australia
- Prior art keywords
- chemical
- mechanical polishing
- polishing slurry
- slurry
- mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09692730 | 2000-10-19 | ||
US09/692,730 US6702954B1 (en) | 2000-10-19 | 2000-10-19 | Chemical-mechanical polishing slurry and method |
PCT/US2001/031432 WO2002033736A1 (en) | 2000-10-19 | 2001-10-09 | Chemical-mechanical polishing slurry and method |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001296713A1 true AU2001296713A1 (en) | 2002-04-29 |
Family
ID=24781771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001296713A Abandoned AU2001296713A1 (en) | 2000-10-19 | 2001-10-09 | Chemical-mechanical polishing slurry and method |
Country Status (7)
Country | Link |
---|---|
US (2) | US6702954B1 (en) |
EP (1) | EP1327258A4 (en) |
JP (1) | JP2004512681A (en) |
KR (1) | KR100718573B1 (en) |
CN (1) | CN100401459C (en) |
AU (1) | AU2001296713A1 (en) |
WO (1) | WO2002033736A1 (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7077880B2 (en) | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
US7513920B2 (en) | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
JP2003338469A (en) * | 2002-05-21 | 2003-11-28 | Fujitsu Ltd | Abrasive, polishing method, and cleaning method |
US7005382B2 (en) * | 2002-10-31 | 2006-02-28 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
US7736405B2 (en) | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
US20050139292A1 (en) * | 2003-12-31 | 2005-06-30 | Suresh Ramarajan | Method and apparatus for minimizing thickness-to-planarity and dishing in CMP |
US7867302B2 (en) * | 2005-02-22 | 2011-01-11 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
US7875091B2 (en) * | 2005-02-22 | 2011-01-25 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
US7449124B2 (en) * | 2005-02-25 | 2008-11-11 | 3M Innovative Properties Company | Method of polishing a wafer |
CN101180379B (en) * | 2005-03-25 | 2013-07-24 | 气体产品与化学公司 | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
CN1865386B (en) * | 2005-05-17 | 2012-05-16 | 安集微电子(上海)有限公司 | Buffing slurry |
CN1865385B (en) * | 2005-05-17 | 2011-01-05 | 安集微电子(上海)有限公司 | Buffing slurry |
US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US20080119056A1 (en) * | 2006-11-16 | 2008-05-22 | International Business Machines Corporation | Method for improved copper layer etching of wafers with c4 connection structures |
US20080116171A1 (en) * | 2006-11-22 | 2008-05-22 | Clarkson University | Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide |
US7723234B2 (en) * | 2006-11-22 | 2010-05-25 | Clarkson University | Method for selective CMP of polysilicon |
US7629258B2 (en) | 2006-11-22 | 2009-12-08 | Clarkson University | Method for one-to-one polishing of silicon nitride and silicon oxide |
US8591764B2 (en) * | 2006-12-20 | 2013-11-26 | 3M Innovative Properties Company | Chemical mechanical planarization composition, system, and method of use |
TW200842970A (en) * | 2007-04-26 | 2008-11-01 | Mallinckrodt Baker Inc | Polysilicon planarization solution for planarizing low temperature poly-silicon thin filim panels |
US20100190339A1 (en) * | 2007-07-26 | 2010-07-29 | Zhan Chen | Compositions and methods for chemical-mechanical polishing of phase change materials |
US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
KR20110019442A (en) | 2008-06-26 | 2011-02-25 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | Polishing pad with porous elements and method of making and using the same |
US8506831B2 (en) * | 2008-12-23 | 2013-08-13 | Air Products And Chemicals, Inc. | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate |
KR20120125612A (en) | 2009-12-30 | 2012-11-16 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Polishing pads including phase-separated polymer blend and method of making and using the same |
JP2013165088A (en) * | 2010-06-03 | 2013-08-22 | Asahi Glass Co Ltd | Polishing agent and polishing method |
EP2643864A2 (en) | 2010-11-22 | 2013-10-02 | 3M Innovative Properties Company | Assembly and electronic devices including the same |
US10508220B2 (en) | 2015-07-10 | 2019-12-17 | Ferro Corporation | Slurry composition and additives and method for polishing organic polymer-based ophthalmic substrates |
WO2017030710A1 (en) | 2015-08-19 | 2017-02-23 | Ferro Corporation | Slurry composition and method of use |
CN109476954B (en) | 2016-08-26 | 2021-07-23 | 福禄公司 | Slurry composition and method for selective silica polishing |
CN111015432B (en) * | 2019-11-26 | 2022-04-01 | 天津津航技术物理研究所 | Chemical mechanical processing method for improving optical surface quality of Ge-As-Se chalcogenide glass |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4789648A (en) | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
EP0786504A3 (en) | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
US5876490A (en) | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
EP0853335A3 (en) | 1997-01-10 | 1999-01-07 | Texas Instruments Incorporated | Slurry and process for the mechano-chemical polishing of semiconductor devices |
US6194317B1 (en) * | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
AU734883B2 (en) * | 1997-04-30 | 2001-06-21 | Minnesota Mining And Manufacturing Company | Method of planarizing the upper surface of a semiconductor wafer |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
JP2002511650A (en) | 1998-04-10 | 2002-04-16 | フェロー コーポレイション | Slurry for polishing chemical-mechanical metal surfaces |
CN1158694C (en) * | 1998-12-28 | 2004-07-21 | 日立化成工业株式会社 | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using same |
US6238592B1 (en) * | 1999-03-10 | 2001-05-29 | 3M Innovative Properties Company | Working liquids and methods for modifying structured wafers suited for semiconductor fabrication |
-
2000
- 2000-10-19 US US09/692,730 patent/US6702954B1/en not_active Expired - Lifetime
-
2001
- 2001-10-09 WO PCT/US2001/031432 patent/WO2002033736A1/en active Application Filing
- 2001-10-09 KR KR20037004967A patent/KR100718573B1/en active IP Right Grant
- 2001-10-09 AU AU2001296713A patent/AU2001296713A1/en not_active Abandoned
- 2001-10-09 CN CNB018176526A patent/CN100401459C/en not_active Expired - Lifetime
- 2001-10-09 JP JP2002537038A patent/JP2004512681A/en active Pending
- 2001-10-09 EP EP01977607A patent/EP1327258A4/en not_active Withdrawn
-
2003
- 2003-12-30 US US10/749,726 patent/US7101800B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1327258A4 (en) | 2005-09-14 |
US6702954B1 (en) | 2004-03-09 |
EP1327258A1 (en) | 2003-07-16 |
US7101800B2 (en) | 2006-09-05 |
WO2002033736A1 (en) | 2002-04-25 |
CN1633698A (en) | 2005-06-29 |
KR100718573B1 (en) | 2007-05-15 |
CN100401459C (en) | 2008-07-09 |
US20040157454A1 (en) | 2004-08-12 |
KR20030034255A (en) | 2003-05-01 |
JP2004512681A (en) | 2004-04-22 |
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