AU2001296492A1 - Activated slurry cmp system and methods for implementing the same - Google Patents

Activated slurry cmp system and methods for implementing the same

Info

Publication number
AU2001296492A1
AU2001296492A1 AU2001296492A AU9649201A AU2001296492A1 AU 2001296492 A1 AU2001296492 A1 AU 2001296492A1 AU 2001296492 A AU2001296492 A AU 2001296492A AU 9649201 A AU9649201 A AU 9649201A AU 2001296492 A1 AU2001296492 A1 AU 2001296492A1
Authority
AU
Australia
Prior art keywords
implementing
methods
same
cmp system
activated slurry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001296492A
Inventor
Yehiel Gotkis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2001296492A1 publication Critical patent/AU2001296492A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
AU2001296492A 2000-10-06 2001-10-02 Activated slurry cmp system and methods for implementing the same Abandoned AU2001296492A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/684,765 US6503129B1 (en) 2000-10-06 2000-10-06 Activated slurry CMP system and methods for implementing the same
US09684765 2000-10-06
PCT/US2001/030829 WO2002030618A1 (en) 2000-10-06 2001-10-02 Activated slurry cmp system and methods for implementing the same

Publications (1)

Publication Number Publication Date
AU2001296492A1 true AU2001296492A1 (en) 2002-04-22

Family

ID=24749468

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001296492A Abandoned AU2001296492A1 (en) 2000-10-06 2001-10-02 Activated slurry cmp system and methods for implementing the same

Country Status (9)

Country Link
US (2) US6503129B1 (en)
EP (1) EP1322450B1 (en)
JP (1) JP4141832B2 (en)
KR (1) KR100846638B1 (en)
CN (1) CN1217767C (en)
AU (1) AU2001296492A1 (en)
DE (1) DE60121008T2 (en)
TW (1) TWI271795B (en)
WO (1) WO2002030618A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503129B1 (en) * 2000-10-06 2003-01-07 Lam Research Corporation Activated slurry CMP system and methods for implementing the same
US7086932B2 (en) * 2004-05-11 2006-08-08 Freudenberg Nonwovens Polishing pad
JP2005019669A (en) * 2003-06-26 2005-01-20 Matsushita Electric Ind Co Ltd Polishing pad, polishing device and method for polishing wafer
US8012355B2 (en) * 2004-01-30 2011-09-06 Pss Acquisitionco Llc Molecular separator
JP4258663B2 (en) * 2005-04-15 2009-04-30 セイコーエプソン株式会社 Coating apparatus and film forming apparatus
JP5199691B2 (en) 2008-02-13 2013-05-15 株式会社荏原製作所 Polishing equipment
US8778203B2 (en) * 2010-05-28 2014-07-15 Clarkson University Tunable polish rates by varying dissolved oxygen content
US20140199840A1 (en) 2013-01-11 2014-07-17 Applied Materials, Inc. Chemical mechanical polishing apparatus and methods
US9962801B2 (en) * 2014-01-07 2018-05-08 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for performing chemical mechanical planarization
US9987724B2 (en) * 2014-07-18 2018-06-05 Applied Materials, Inc. Polishing system with pad carrier and conditioning station
JP6586023B2 (en) * 2015-06-29 2019-10-02 パナソニック株式会社 Processing apparatus and processing method
JP2024508561A (en) * 2021-02-16 2024-02-27 アラカ， インコーポレイテッド Chemical-mechanical planarization slurry processing technology and systems and methods for polishing substrates using the same
US11752592B2 (en) * 2021-07-16 2023-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry enhancement for polishing system

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3311203B2 (en) * 1995-06-13 2002-08-05 株式会社東芝 Semiconductor device manufacturing method, semiconductor manufacturing apparatus, and chemical mechanical polishing method for semiconductor wafer
US5811355A (en) 1996-10-31 1998-09-22 Aiwa Co., Ltd. Enhanced chemical-mechanical polishing (E-CMP) method of forming a planar surface on a thin film magnetic head to avoid pole recession
JP3672685B2 (en) * 1996-11-29 2005-07-20 松下電器産業株式会社 Polishing method and polishing apparatus
US6328642B1 (en) 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
DE19737849A1 (en) * 1997-08-29 1999-03-11 Siemens Ag Device and method for heating a liquid or viscous polishing agent and device for polishing wafers
US5957750A (en) * 1997-12-18 1999-09-28 Micron Technology, Inc. Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates
US6121144A (en) * 1997-12-29 2000-09-19 Intel Corporation Low temperature chemical mechanical polishing of dielectric materials
JP3075352B2 (en) * 1998-04-15 2000-08-14 日本電気株式会社 Method and apparatus for supplying chemical mechanical polishing liquid
JP2000015557A (en) 1998-04-27 2000-01-18 Ebara Corp Polishing device
US6177026B1 (en) 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
TW374051B (en) 1998-08-28 1999-11-11 Worldwide Semiconductor Mfg A chemical mechanical polishing table
US6315635B1 (en) * 1999-03-31 2001-11-13 Taiwan Semiconductor Manufacturing Company, Ltd Method and apparatus for slurry temperature control in a polishing process
US6227939B1 (en) * 2000-01-25 2001-05-08 Agilent Technologies, Inc. Temperature controlled chemical mechanical polishing method and apparatus
US6340326B1 (en) * 2000-01-28 2002-01-22 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers
US6585572B1 (en) * 2000-08-22 2003-07-01 Lam Research Corporation Subaperture chemical mechanical polishing system
US6443815B1 (en) * 2000-09-22 2002-09-03 Lam Research Corporation Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing
US6503129B1 (en) * 2000-10-06 2003-01-07 Lam Research Corporation Activated slurry CMP system and methods for implementing the same

Also Published As

Publication number Publication date
WO2002030618A1 (en) 2002-04-18
CN1479665A (en) 2004-03-03
CN1217767C (en) 2005-09-07
US6866567B2 (en) 2005-03-15
DE60121008T2 (en) 2007-07-05
KR20030034251A (en) 2003-05-01
JP4141832B2 (en) 2008-08-27
EP1322450A1 (en) 2003-07-02
US20030077988A1 (en) 2003-04-24
DE60121008D1 (en) 2006-08-03
EP1322450B1 (en) 2006-06-21
JP2004511109A (en) 2004-04-08
KR100846638B1 (en) 2008-07-16
US6503129B1 (en) 2003-01-07
TWI271795B (en) 2007-01-21

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