AU2001261092A1 - Polishing slurries for copper and associated materials - Google Patents

Polishing slurries for copper and associated materials

Info

Publication number
AU2001261092A1
AU2001261092A1 AU2001261092A AU6109201A AU2001261092A1 AU 2001261092 A1 AU2001261092 A1 AU 2001261092A1 AU 2001261092 A AU2001261092 A AU 2001261092A AU 6109201 A AU6109201 A AU 6109201A AU 2001261092 A1 AU2001261092 A1 AU 2001261092A1
Authority
AU
Australia
Prior art keywords
copper
polishing slurries
associated materials
slurries
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001261092A
Inventor
Thomas H. Baum
Long Nguyen
Cary Regulski
William A. Wojtczak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of AU2001261092A1 publication Critical patent/AU2001261092A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AU2001261092A 2000-05-01 2001-04-27 Polishing slurries for copper and associated materials Abandoned AU2001261092A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09562298 2000-05-01
US09/562,298 US6409781B1 (en) 2000-05-01 2000-05-01 Polishing slurries for copper and associated materials
PCT/US2001/013896 WO2001083638A1 (en) 2000-05-01 2001-04-27 Polishing slurries for copper and associated materials

Publications (1)

Publication Number Publication Date
AU2001261092A1 true AU2001261092A1 (en) 2001-11-12

Family

ID=24245681

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001261092A Abandoned AU2001261092A1 (en) 2000-05-01 2001-04-27 Polishing slurries for copper and associated materials

Country Status (3)

Country Link
US (4) US6409781B1 (en)
AU (1) AU2001261092A1 (en)
WO (1) WO2001083638A1 (en)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US6881674B2 (en) * 1999-12-28 2005-04-19 Intel Corporation Abrasives for chemical mechanical polishing
US6409781B1 (en) * 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
KR100481651B1 (en) * 2000-08-21 2005-04-08 가부시끼가이샤 도시바 Slurry for chemical mechanical polishing and method for manufacturing semiconductor device
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6468137B1 (en) 2000-09-07 2002-10-22 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US7029373B2 (en) * 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
FR2835844B1 (en) * 2002-02-13 2006-12-15 Clariant PROCESS FOR THE MECANO-CHEMICAL POLISHING OF METAL SUBSTRATES
JP2003311540A (en) * 2002-04-30 2003-11-05 Sony Corp Electrolytic polishing liquid, electrolytic polishing method and method for producing semiconductor device
US6555477B1 (en) * 2002-05-22 2003-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing Cu CMP corrosion
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
KR20040043383A (en) * 2002-11-18 2004-05-24 주식회사 하이닉스반도체 Method for forming Cu wiring of semiconductor device
US7300602B2 (en) * 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
EP1616926A1 (en) * 2004-07-15 2006-01-18 Interuniversitair Microelektronica Centrum ( Imec) Slurry composition and method for chemical polishing of copper integrated with tungsten based barrier metals
US7291557B2 (en) * 2004-09-13 2007-11-06 Taiwan Semiconductor Manufacturing Company Method for forming an interconnection structure for ic metallization
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7300876B2 (en) * 2004-12-14 2007-11-27 Sandisk 3D Llc Method for cleaning slurry particles from a surface polished by chemical mechanical polishing
JP5319887B2 (en) * 2005-01-05 2013-10-16 ニッタ・ハース株式会社 Slurry for polishing
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US20090215269A1 (en) * 2005-06-06 2009-08-27 Advanced Technology Materials Inc. Integrated chemical mechanical polishing composition and process for single platen processing
TW200714696A (en) * 2005-08-05 2007-04-16 Advanced Tech Materials High throughput chemical mechanical polishing composition for metal film planarization
US20070049009A1 (en) * 2005-08-30 2007-03-01 Chia-Lin Hsu Method of manufacturing conductive layer
DE102006008689B4 (en) * 2006-02-24 2012-01-26 Lanxess Deutschland Gmbh Polish and its use
US8551202B2 (en) * 2006-03-23 2013-10-08 Cabot Microelectronics Corporation Iodate-containing chemical-mechanical polishing compositions and methods
US7837888B2 (en) * 2006-11-13 2010-11-23 Cabot Microelectronics Corporation Composition and method for damascene CMP
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
JP2009050920A (en) * 2007-08-23 2009-03-12 Asahi Glass Co Ltd Manufacturing method of glass substrate for magnetic disc
JP2009088486A (en) * 2007-08-29 2009-04-23 Applied Materials Inc High throughput low topography copper cmp process
US7955520B2 (en) 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
CN101665661A (en) * 2008-09-05 2010-03-10 安集微电子科技(上海)有限公司 Application of amine compounds and chemical mechanical polishing solution
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US9238850B2 (en) 2010-08-20 2016-01-19 Advanced Technology Materials, Inc. Sustainable process for reclaiming precious metals and base metals from e-waste
WO2012048079A2 (en) 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
CN102615584A (en) * 2011-01-31 2012-08-01 中芯国际集成电路制造(上海)有限公司 Chemical mechanical grinding method
JP5767898B2 (en) * 2011-08-12 2015-08-26 株式会社東芝 Manufacturing method of semiconductor device
US8865013B2 (en) 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Etching solution for copper or copper alloy
KR102118964B1 (en) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Compositions for cleaning iii-v semiconductor materials and methods of using same
US10472567B2 (en) 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN111394100A (en) 2013-06-06 2020-07-10 恩特格里斯公司 Compositions and methods for selectively etching titanium nitride
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
SG10201801575YA (en) 2013-08-30 2018-03-28 Entegris Inc Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (en) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 Use of non-oxidizing strong acids for the removal of ion-implanted resist
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
TWI664280B (en) * 2016-10-11 2019-07-01 Fujifilm Electronic Materials U.S.A., Inc. Elevated temperature cmp compositions and methods for use thereof
US10286518B2 (en) * 2017-01-31 2019-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
CN113195656A (en) * 2018-12-12 2021-07-30 巴斯夫欧洲公司 Chemical mechanical polishing of copper and ruthenium containing substrates

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JPH08223072A (en) 1995-02-09 1996-08-30 Matsushita Electric Ind Co Ltd Radio equipment
US5676587A (en) * 1995-12-06 1997-10-14 International Business Machines Corporation Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
JPH1022307A (en) 1996-07-05 1998-01-23 Toshiba Mechatronics Kk Collet touch detecting mechanism of die bonder
WO1998004646A1 (en) * 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
JP3507628B2 (en) 1996-08-06 2004-03-15 昭和電工株式会社 Polishing composition for chemical mechanical polishing
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
JPH10223072A (en) 1997-02-03 1998-08-21 Ngk Insulators Ltd Polymer bushing suitable for pour-type mold forming
US5756398A (en) 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US5993685A (en) 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US6045435A (en) 1997-08-04 2000-04-04 Motorola, Inc. Low selectivity chemical mechanical polishing (CMP) process for use on integrated circuit metal interconnects
US6001730A (en) 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US5985748A (en) 1997-12-01 1999-11-16 Motorola, Inc. Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6083840A (en) 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6409781B1 (en) * 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials

Also Published As

Publication number Publication date
US6936542B2 (en) 2005-08-30
US7427567B2 (en) 2008-09-23
US20060084272A1 (en) 2006-04-20
US6527819B2 (en) 2003-03-04
WO2001083638A1 (en) 2001-11-08
US20020124474A1 (en) 2002-09-12
US20020081865A1 (en) 2002-06-27
US6409781B1 (en) 2002-06-25

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