EP1648974A4 - Aufschlämmungen und verfahren zur chemisch-mechanischen planarisierung von kupfer - Google Patents

Aufschlämmungen und verfahren zur chemisch-mechanischen planarisierung von kupfer

Info

Publication number
EP1648974A4
EP1648974A4 EP04779276A EP04779276A EP1648974A4 EP 1648974 A4 EP1648974 A4 EP 1648974A4 EP 04779276 A EP04779276 A EP 04779276A EP 04779276 A EP04779276 A EP 04779276A EP 1648974 A4 EP1648974 A4 EP 1648974A4
Authority
EP
European Patent Office
Prior art keywords
slurries
copper
chemical
methods
mechanical planarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04779276A
Other languages
English (en)
French (fr)
Other versions
EP1648974A2 (de
Inventor
S V Babu
Sharath Hegde
Sunil Jha
Udaya B Patri
Youngki Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Climax Engineered Materials LLC
Original Assignee
Climax Engineered Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/631,698 external-priority patent/US20050022456A1/en
Application filed by Climax Engineered Materials LLC filed Critical Climax Engineered Materials LLC
Priority to EP10009005A priority Critical patent/EP2256171A1/de
Publication of EP1648974A2 publication Critical patent/EP1648974A2/de
Publication of EP1648974A4 publication Critical patent/EP1648974A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
EP04779276A 2003-07-30 2004-07-27 Aufschlämmungen und verfahren zur chemisch-mechanischen planarisierung von kupfer Withdrawn EP1648974A4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10009005A EP2256171A1 (de) 2003-07-30 2004-07-27 Verfahren zur chemisch-mechanischen Planarisierung von Kupfer

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/631,698 US20050022456A1 (en) 2003-07-30 2003-07-30 Polishing slurry and method for chemical-mechanical polishing of copper
US10/846,718 US20050026444A1 (en) 2003-07-30 2004-05-13 Slurry and method for chemical-mechanical planarization of copper
PCT/US2004/024143 WO2005012451A2 (en) 2003-07-30 2004-07-27 Slurries and methods for chemical-mechanical planarization of copper

Publications (2)

Publication Number Publication Date
EP1648974A2 EP1648974A2 (de) 2006-04-26
EP1648974A4 true EP1648974A4 (de) 2008-04-23

Family

ID=34119220

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04779276A Withdrawn EP1648974A4 (de) 2003-07-30 2004-07-27 Aufschlämmungen und verfahren zur chemisch-mechanischen planarisierung von kupfer

Country Status (4)

Country Link
EP (1) EP1648974A4 (de)
JP (1) JP2007500943A (de)
KR (1) KR20060118396A (de)
WO (1) WO2005012451A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001032799A1 (en) * 1999-11-04 2001-05-10 Nanogram Corporation Particle dispersions
EP1167482A2 (de) * 2000-06-30 2002-01-02 Kabushiki Kaisha Toshiba Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten
US6551172B1 (en) * 1997-10-31 2003-04-22 Canon Kabushiki Kaisha Polishing apparatus and polishing method

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
JPS6330321A (ja) * 1986-07-19 1988-02-09 Tokyo Tungsten Co Ltd 二酸化モリブデン粉末及びその製造方法
US20090255189A1 (en) * 1998-08-19 2009-10-15 Nanogram Corporation Aluminum oxide particles
US6290735B1 (en) * 1997-10-31 2001-09-18 Nanogram Corporation Abrasive particles for surface polishing
JP2000158331A (ja) * 1997-12-10 2000-06-13 Canon Inc 基板の精密研磨方法および装置
JPH11204474A (ja) * 1998-01-09 1999-07-30 Sony Corp フッ素を含む膜の研磨方法
JP2000108004A (ja) * 1998-10-07 2000-04-18 Canon Inc 研磨装置
JP4273475B2 (ja) * 1999-09-21 2009-06-03 株式会社フジミインコーポレーテッド 研磨用組成物
JP2003510802A (ja) * 1999-09-23 2003-03-18 ロデール ホールディングス インコーポレイテッド 銅又はタングステンの研磨用スラリー溶液
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
JP3945964B2 (ja) * 2000-06-01 2007-07-18 株式会社ルネサステクノロジ 研磨剤、研磨方法及び半導体装置の製造方法
US6569222B2 (en) * 2000-06-09 2003-05-27 Harper International Corporation Continuous single stage process for the production of molybdenum metal
JP4743941B2 (ja) * 2000-06-30 2011-08-10 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2002184734A (ja) * 2000-12-19 2002-06-28 Tokuyama Corp 半導体装置の製造方法
JP3507794B2 (ja) * 2000-12-25 2004-03-15 日本電気株式会社 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6551172B1 (en) * 1997-10-31 2003-04-22 Canon Kabushiki Kaisha Polishing apparatus and polishing method
WO2001032799A1 (en) * 1999-11-04 2001-05-10 Nanogram Corporation Particle dispersions
EP1167482A2 (de) * 2000-06-30 2002-01-02 Kabushiki Kaisha Toshiba Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ABCR GMBH&CO ET AL: "AVOCADO/ABCR Catalogue 2000-2001 : Chemicals for Research and Development", AVOCADO/ABCR CATALOGUE, XX, XX, 2001, pages 774, XP002337567 *
FAYOLLE M ET AL: "Copper CMP evaluation: planarization issues", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 37-38, 1 November 1997 (1997-11-01), pages 135 - 141, XP004103556, ISSN: 0167-9317, DOI: 10.1016/S0167-9317(97)00104-4 *
LEE E H ET AL: "The oxidative-dissolution behaviors of fission products in a Na2CO3â H2O2 solution", JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, KLUWER ACADEMIC PUBLISHERS, DO, vol. 281, no. 3, 2 July 2009 (2009-07-02), pages 339 - 346, XP019751193, ISSN: 1588-2780, DOI: 10.1007/S10967-009-0018-6 *

Also Published As

Publication number Publication date
KR20060118396A (ko) 2006-11-23
EP1648974A2 (de) 2006-04-26
WO2005012451A3 (en) 2006-05-18
WO2005012451A2 (en) 2005-02-10
JP2007500943A (ja) 2007-01-18

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