JP3837277B2 - 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法 - Google Patents

銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法 Download PDF

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Publication number
JP3837277B2
JP3837277B2 JP2000199462A JP2000199462A JP3837277B2 JP 3837277 B2 JP3837277 B2 JP 3837277B2 JP 2000199462 A JP2000199462 A JP 2000199462A JP 2000199462 A JP2000199462 A JP 2000199462A JP 3837277 B2 JP3837277 B2 JP 3837277B2
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JP
Japan
Prior art keywords
aqueous dispersion
polishing
chemical mechanical
mechanical polishing
copper according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000199462A
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English (en)
Japanese (ja)
Other versions
JP2002012854A5 (enExample
JP2002012854A (ja
Inventor
博之 矢野
学 南幅
正之 元成
雅幸 服部
信夫 川橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
JSR Corp
Original Assignee
Toshiba Corp
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, JSR Corp filed Critical Toshiba Corp
Priority to JP2000199462A priority Critical patent/JP3837277B2/ja
Priority to TW090115802A priority patent/TW538113B/zh
Priority to DE60127206T priority patent/DE60127206T2/de
Priority to EP01115585A priority patent/EP1167482B1/en
Priority to KR1020010037921A priority patent/KR100747954B1/ko
Priority to US09/893,961 priority patent/US6653267B2/en
Publication of JP2002012854A publication Critical patent/JP2002012854A/ja
Publication of JP2002012854A5 publication Critical patent/JP2002012854A5/ja
Application granted granted Critical
Publication of JP3837277B2 publication Critical patent/JP3837277B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
JP2000199462A 2000-06-30 2000-06-30 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法 Expired - Lifetime JP3837277B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000199462A JP3837277B2 (ja) 2000-06-30 2000-06-30 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
DE60127206T DE60127206T2 (de) 2000-06-30 2001-06-28 Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten
EP01115585A EP1167482B1 (en) 2000-06-30 2001-06-28 Aqueous dispersion for chemical mechanical polishing used for polishing of copper
TW090115802A TW538113B (en) 2000-06-30 2001-06-28 Aqueous dispersion for chemical mechanical polishing used for polishing of copper
KR1020010037921A KR100747954B1 (ko) 2000-06-30 2001-06-29 구리 연마에 사용되는 화학 기계 연마용 수계 분산체
US09/893,961 US6653267B2 (en) 2000-06-30 2001-06-29 Aqueous dispersion for chemical mechanical polishing used for polishing of copper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000199462A JP3837277B2 (ja) 2000-06-30 2000-06-30 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法

Publications (3)

Publication Number Publication Date
JP2002012854A JP2002012854A (ja) 2002-01-15
JP2002012854A5 JP2002012854A5 (enExample) 2004-12-24
JP3837277B2 true JP3837277B2 (ja) 2006-10-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000199462A Expired - Lifetime JP3837277B2 (ja) 2000-06-30 2000-06-30 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法

Country Status (6)

Country Link
US (1) US6653267B2 (enExample)
EP (1) EP1167482B1 (enExample)
JP (1) JP3837277B2 (enExample)
KR (1) KR100747954B1 (enExample)
DE (1) DE60127206T2 (enExample)
TW (1) TW538113B (enExample)

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Also Published As

Publication number Publication date
DE60127206T2 (de) 2007-12-20
DE60127206D1 (de) 2007-04-26
KR100747954B1 (ko) 2007-08-08
KR20020002285A (ko) 2002-01-09
EP1167482A3 (en) 2003-09-03
US20020016275A1 (en) 2002-02-07
TW538113B (en) 2003-06-21
EP1167482A2 (en) 2002-01-02
US6653267B2 (en) 2003-11-25
EP1167482B1 (en) 2007-03-14
JP2002012854A (ja) 2002-01-15

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