KR100743034B1 - 자기 메모리 및 그 제조 방법 - Google Patents

자기 메모리 및 그 제조 방법 Download PDF

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Publication number
KR100743034B1
KR100743034B1 KR1020050089391A KR20050089391A KR100743034B1 KR 100743034 B1 KR100743034 B1 KR 100743034B1 KR 1020050089391 A KR1020050089391 A KR 1020050089391A KR 20050089391 A KR20050089391 A KR 20050089391A KR 100743034 B1 KR100743034 B1 KR 100743034B1
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South Korea
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layer
memory
mram
ferromagnetic
ferromagnetic layer
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Korean (ko)
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KR20060059793A (ko
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요시하루 카네가에
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Heads (AREA)
KR1020050089391A 2004-11-29 2005-09-26 자기 메모리 및 그 제조 방법 Expired - Fee Related KR100743034B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00343274 2004-11-29
JP2004343274A JP2006156608A (ja) 2004-11-29 2004-11-29 磁気メモリおよびその製造方法

Publications (2)

Publication Number Publication Date
KR20060059793A KR20060059793A (ko) 2006-06-02
KR100743034B1 true KR100743034B1 (ko) 2007-07-27

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KR1020050089391A Expired - Fee Related KR100743034B1 (ko) 2004-11-29 2005-09-26 자기 메모리 및 그 제조 방법

Country Status (5)

Country Link
US (1) US7215566B2 (enExample)
JP (1) JP2006156608A (enExample)
KR (1) KR100743034B1 (enExample)
CN (1) CN1783334B (enExample)
TW (1) TWI281667B (enExample)

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US7394626B2 (en) * 2002-11-01 2008-07-01 Nec Corporation Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
JP2004200245A (ja) * 2002-12-16 2004-07-15 Nec Corp 磁気抵抗素子及び磁気抵抗素子の製造方法
JP2008211057A (ja) 2007-02-27 2008-09-11 Toshiba Corp 磁気ランダムアクセスメモリ
JP2009194210A (ja) 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP4835614B2 (ja) * 2008-03-05 2011-12-14 ソニー株式会社 不揮発性磁気メモリ装置
JP4952725B2 (ja) 2009-01-14 2012-06-13 ソニー株式会社 不揮発性磁気メモリ装置
TWI447726B (zh) * 2010-04-02 2014-08-01 Ind Tech Res Inst 磁性隨機存取記憶體
JP2012182217A (ja) * 2011-02-28 2012-09-20 Toshiba Corp 半導体記憶装置
US8946837B2 (en) 2011-07-04 2015-02-03 Kabushiki Kaisha Toshiba Semiconductor storage device with magnetoresistive element
JP5722140B2 (ja) 2011-07-04 2015-05-20 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5327293B2 (ja) * 2011-08-30 2013-10-30 ソニー株式会社 不揮発性磁気メモリ装置
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US8923038B2 (en) * 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
CN104813478B (zh) 2012-11-08 2017-07-21 国立研究开发法人科学技术振兴机构 自旋阀元件
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN105633110B (zh) * 2015-09-22 2019-03-08 上海磁宇信息科技有限公司 一种平面型stt-mram记忆单元及其读写方法
WO2017090739A1 (ja) 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子および磁気メモリ
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
WO2020191390A2 (en) 2019-03-21 2020-09-24 Illumina, Inc. Artificial intelligence-based quality scoring
US11751488B2 (en) 2020-01-24 2023-09-05 Tdk Corporation Spin element and reservoir element
WO2021240796A1 (ja) 2020-05-29 2021-12-02 Tdk株式会社 磁性膜、磁気抵抗効果素子及び磁性膜の製造方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2002367365A (ja) 2001-06-12 2002-12-20 Hitachi Ltd 半導体装置
KR20030046296A (ko) * 2001-12-05 2003-06-12 대한민국(서울대학교) 전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법
WO2003107424A1 (ja) 2002-06-18 2003-12-24 科学技術振興事業団 磁気抵抗ランダムアクセスメモリー装置およびこれを構成する強磁性半導体の強磁性転移温度の制御方法
KR20040081365A (ko) * 2003-03-12 2004-09-21 소니 가부시끼 가이샤 자기 메모리 장치 제조 방법, 및 자기 메모리 장치

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JP2001014616A (ja) * 1999-06-30 2001-01-19 Tdk Corp 磁気変換素子、薄膜磁気ヘッドおよびそれらの製造方法
JP4568926B2 (ja) * 1999-07-14 2010-10-27 ソニー株式会社 磁気機能素子及び磁気記録装置
DE10041378C1 (de) * 2000-08-23 2002-05-16 Infineon Technologies Ag MRAM-Anordnung
TW556233B (en) * 2001-05-15 2003-10-01 Matsushita Electric Industrial Co Ltd Magnetoresistive element
KR100829556B1 (ko) * 2002-05-29 2008-05-14 삼성전자주식회사 자기 저항 램 및 그의 제조방법
JP2004186659A (ja) * 2002-10-07 2004-07-02 Alps Electric Co Ltd 磁気検出素子
JP3951902B2 (ja) * 2002-11-25 2007-08-01 ヤマハ株式会社 磁気トンネル接合素子の製法と磁気トンネル接合装置
JP2004319725A (ja) * 2003-04-16 2004-11-11 Fujitsu Ltd 磁気ランダムアクセスメモリ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002367365A (ja) 2001-06-12 2002-12-20 Hitachi Ltd 半導体装置
KR20030046296A (ko) * 2001-12-05 2003-06-12 대한민국(서울대학교) 전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법
WO2003107424A1 (ja) 2002-06-18 2003-12-24 科学技術振興事業団 磁気抵抗ランダムアクセスメモリー装置およびこれを構成する強磁性半導体の強磁性転移温度の制御方法
KR20040081365A (ko) * 2003-03-12 2004-09-21 소니 가부시끼 가이샤 자기 메모리 장치 제조 방법, 및 자기 메모리 장치

Also Published As

Publication number Publication date
JP2006156608A (ja) 2006-06-15
TWI281667B (en) 2007-05-21
CN1783334A (zh) 2006-06-07
CN1783334B (zh) 2010-04-21
US20060114714A1 (en) 2006-06-01
US7215566B2 (en) 2007-05-08
TW200629272A (en) 2006-08-16
KR20060059793A (ko) 2006-06-02

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