CN1783334B - 磁存储器及其制造方法 - Google Patents

磁存储器及其制造方法 Download PDF

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Publication number
CN1783334B
CN1783334B CN2005100990163A CN200510099016A CN1783334B CN 1783334 B CN1783334 B CN 1783334B CN 2005100990163 A CN2005100990163 A CN 2005100990163A CN 200510099016 A CN200510099016 A CN 200510099016A CN 1783334 B CN1783334 B CN 1783334B
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CN
China
Prior art keywords
layer
ferromagnetic
ferromagnetic layer
mram
wiring layer
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Expired - Fee Related
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CN2005100990163A
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English (en)
Chinese (zh)
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CN1783334A (zh
Inventor
钟江义晴
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Hitachi Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Heads (AREA)
CN2005100990163A 2004-11-29 2005-08-31 磁存储器及其制造方法 Expired - Fee Related CN1783334B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004343274A JP2006156608A (ja) 2004-11-29 2004-11-29 磁気メモリおよびその製造方法
JP2004343274 2004-11-29
JP2004-343274 2004-11-29

Publications (2)

Publication Number Publication Date
CN1783334A CN1783334A (zh) 2006-06-07
CN1783334B true CN1783334B (zh) 2010-04-21

Family

ID=36567212

Family Applications (1)

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CN2005100990163A Expired - Fee Related CN1783334B (zh) 2004-11-29 2005-08-31 磁存储器及其制造方法

Country Status (5)

Country Link
US (1) US7215566B2 (enExample)
JP (1) JP2006156608A (enExample)
KR (1) KR100743034B1 (enExample)
CN (1) CN1783334B (enExample)
TW (1) TWI281667B (enExample)

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US7394626B2 (en) * 2002-11-01 2008-07-01 Nec Corporation Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
JP2004200245A (ja) * 2002-12-16 2004-07-15 Nec Corp 磁気抵抗素子及び磁気抵抗素子の製造方法
JP2008211057A (ja) 2007-02-27 2008-09-11 Toshiba Corp 磁気ランダムアクセスメモリ
JP2009194210A (ja) 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP4835614B2 (ja) * 2008-03-05 2011-12-14 ソニー株式会社 不揮発性磁気メモリ装置
JP4952725B2 (ja) 2009-01-14 2012-06-13 ソニー株式会社 不揮発性磁気メモリ装置
TWI447726B (zh) * 2010-04-02 2014-08-01 Ind Tech Res Inst 磁性隨機存取記憶體
JP2012182217A (ja) * 2011-02-28 2012-09-20 Toshiba Corp 半導体記憶装置
US8946837B2 (en) 2011-07-04 2015-02-03 Kabushiki Kaisha Toshiba Semiconductor storage device with magnetoresistive element
JP5722140B2 (ja) 2011-07-04 2015-05-20 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5327293B2 (ja) * 2011-08-30 2013-10-30 ソニー株式会社 不揮発性磁気メモリ装置
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US8923038B2 (en) * 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
CN104813478B (zh) 2012-11-08 2017-07-21 国立研究开发法人科学技术振兴机构 自旋阀元件
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN105633110B (zh) * 2015-09-22 2019-03-08 上海磁宇信息科技有限公司 一种平面型stt-mram记忆单元及其读写方法
WO2017090739A1 (ja) 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子および磁気メモリ
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
WO2020191390A2 (en) 2019-03-21 2020-09-24 Illumina, Inc. Artificial intelligence-based quality scoring
US11751488B2 (en) 2020-01-24 2023-09-05 Tdk Corporation Spin element and reservoir element
WO2021240796A1 (ja) 2020-05-29 2021-12-02 Tdk株式会社 磁性膜、磁気抵抗効果素子及び磁性膜の製造方法

Citations (3)

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CN1347119A (zh) * 2000-08-23 2002-05-01 因芬尼昂技术股份公司 Mram装置
US6387476B1 (en) * 1999-07-14 2002-05-14 Sony Corporation Magnetic functional element and magnetic recording medium
US6545848B1 (en) * 1999-06-30 2003-04-08 Tdk Corporation Magnetic transducer, thin film magnetic head and method of manufacturing the same

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TW556233B (en) * 2001-05-15 2003-10-01 Matsushita Electric Industrial Co Ltd Magnetoresistive element
JP3869682B2 (ja) 2001-06-12 2007-01-17 株式会社ルネサステクノロジ 半導体装置
KR100451660B1 (ko) * 2001-12-05 2004-10-08 대한민국(서울대학교 총장) 전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법
KR100829556B1 (ko) * 2002-05-29 2008-05-14 삼성전자주식회사 자기 저항 램 및 그의 제조방법
JP3571034B2 (ja) 2002-06-18 2004-09-29 独立行政法人 科学技術振興機構 磁気抵抗ランダムアクセスメモリー装置
JP2004186659A (ja) * 2002-10-07 2004-07-02 Alps Electric Co Ltd 磁気検出素子
JP3951902B2 (ja) * 2002-11-25 2007-08-01 ヤマハ株式会社 磁気トンネル接合素子の製法と磁気トンネル接合装置
JP2004273969A (ja) * 2003-03-12 2004-09-30 Sony Corp 磁気記憶装置の製造方法
JP2004319725A (ja) * 2003-04-16 2004-11-11 Fujitsu Ltd 磁気ランダムアクセスメモリ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545848B1 (en) * 1999-06-30 2003-04-08 Tdk Corporation Magnetic transducer, thin film magnetic head and method of manufacturing the same
US6387476B1 (en) * 1999-07-14 2002-05-14 Sony Corporation Magnetic functional element and magnetic recording medium
CN1347119A (zh) * 2000-08-23 2002-05-01 因芬尼昂技术股份公司 Mram装置

Also Published As

Publication number Publication date
JP2006156608A (ja) 2006-06-15
TWI281667B (en) 2007-05-21
KR100743034B1 (ko) 2007-07-27
CN1783334A (zh) 2006-06-07
US20060114714A1 (en) 2006-06-01
US7215566B2 (en) 2007-05-08
TW200629272A (en) 2006-08-16
KR20060059793A (ko) 2006-06-02

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