JP2006156608A - 磁気メモリおよびその製造方法 - Google Patents

磁気メモリおよびその製造方法 Download PDF

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Publication number
JP2006156608A
JP2006156608A JP2004343274A JP2004343274A JP2006156608A JP 2006156608 A JP2006156608 A JP 2006156608A JP 2004343274 A JP2004343274 A JP 2004343274A JP 2004343274 A JP2004343274 A JP 2004343274A JP 2006156608 A JP2006156608 A JP 2006156608A
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JP
Japan
Prior art keywords
layer
memory
mram
ferromagnetic
ferromagnetic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004343274A
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English (en)
Japanese (ja)
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JP2006156608A5 (enExample
Inventor
Yoshiharu Kanegae
義晴 鐘ヶ江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2004343274A priority Critical patent/JP2006156608A/ja
Priority to TW094126185A priority patent/TWI281667B/zh
Priority to US11/214,869 priority patent/US7215566B2/en
Priority to CN2005100990163A priority patent/CN1783334B/zh
Priority to KR1020050089391A priority patent/KR100743034B1/ko
Publication of JP2006156608A publication Critical patent/JP2006156608A/ja
Publication of JP2006156608A5 publication Critical patent/JP2006156608A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Heads (AREA)
JP2004343274A 2004-11-29 2004-11-29 磁気メモリおよびその製造方法 Pending JP2006156608A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004343274A JP2006156608A (ja) 2004-11-29 2004-11-29 磁気メモリおよびその製造方法
TW094126185A TWI281667B (en) 2004-11-29 2005-08-02 Magnetic memory and its manufacturing method
US11/214,869 US7215566B2 (en) 2004-11-29 2005-08-31 Magnetroresistive random access memory and method of manufacturing the same
CN2005100990163A CN1783334B (zh) 2004-11-29 2005-08-31 磁存储器及其制造方法
KR1020050089391A KR100743034B1 (ko) 2004-11-29 2005-09-26 자기 메모리 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004343274A JP2006156608A (ja) 2004-11-29 2004-11-29 磁気メモリおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2006156608A true JP2006156608A (ja) 2006-06-15
JP2006156608A5 JP2006156608A5 (enExample) 2007-04-05

Family

ID=36567212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004343274A Pending JP2006156608A (ja) 2004-11-29 2004-11-29 磁気メモリおよびその製造方法

Country Status (5)

Country Link
US (1) US7215566B2 (enExample)
JP (1) JP2006156608A (enExample)
KR (1) KR100743034B1 (enExample)
CN (1) CN1783334B (enExample)
TW (1) TWI281667B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212323A (ja) * 2008-03-05 2009-09-17 Sony Corp 不揮発性磁気メモリ装置
JP2010165790A (ja) * 2009-01-14 2010-07-29 Sony Corp 不揮発性磁気メモリ装置
US7932572B2 (en) 2008-02-15 2011-04-26 Renesas Electronics Corporation Semiconductor device having memory element with stress insulating film
JP2012039124A (ja) * 2011-08-30 2012-02-23 Sony Corp 不揮発性磁気メモリ装置

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7394626B2 (en) * 2002-11-01 2008-07-01 Nec Corporation Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
JP2004200245A (ja) * 2002-12-16 2004-07-15 Nec Corp 磁気抵抗素子及び磁気抵抗素子の製造方法
JP2008211057A (ja) 2007-02-27 2008-09-11 Toshiba Corp 磁気ランダムアクセスメモリ
TWI447726B (zh) * 2010-04-02 2014-08-01 Ind Tech Res Inst 磁性隨機存取記憶體
JP2012182217A (ja) * 2011-02-28 2012-09-20 Toshiba Corp 半導体記憶装置
US8946837B2 (en) 2011-07-04 2015-02-03 Kabushiki Kaisha Toshiba Semiconductor storage device with magnetoresistive element
JP5722140B2 (ja) 2011-07-04 2015-05-20 株式会社東芝 磁気抵抗素子及び磁気メモリ
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US8923038B2 (en) * 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
CN104813478B (zh) 2012-11-08 2017-07-21 国立研究开发法人科学技术振兴机构 自旋阀元件
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN105633110B (zh) * 2015-09-22 2019-03-08 上海磁宇信息科技有限公司 一种平面型stt-mram记忆单元及其读写方法
WO2017090739A1 (ja) 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子および磁気メモリ
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
WO2020191390A2 (en) 2019-03-21 2020-09-24 Illumina, Inc. Artificial intelligence-based quality scoring
US11751488B2 (en) 2020-01-24 2023-09-05 Tdk Corporation Spin element and reservoir element
WO2021240796A1 (ja) 2020-05-29 2021-12-02 Tdk株式会社 磁性膜、磁気抵抗効果素子及び磁性膜の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002093661A1 (en) * 2001-05-15 2002-11-21 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element
JP2003347521A (ja) * 2002-05-29 2003-12-05 Samsung Electronics Co Ltd 磁気抵抗ｒａｍ及びその製造方法
JP2004179250A (ja) * 2002-11-25 2004-06-24 Yamaha Corp 磁気トンネル接合素子の製法と磁気トンネル接合装置
JP2004319725A (ja) * 2003-04-16 2004-11-11 Fujitsu Ltd 磁気ランダムアクセスメモリ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001014616A (ja) * 1999-06-30 2001-01-19 Tdk Corp 磁気変換素子、薄膜磁気ヘッドおよびそれらの製造方法
JP4568926B2 (ja) * 1999-07-14 2010-10-27 ソニー株式会社 磁気機能素子及び磁気記録装置
DE10041378C1 (de) * 2000-08-23 2002-05-16 Infineon Technologies Ag MRAM-Anordnung
JP3869682B2 (ja) 2001-06-12 2007-01-17 株式会社ルネサステクノロジ 半導体装置
KR100451660B1 (ko) * 2001-12-05 2004-10-08 대한민국(서울대학교 총장) 전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법
JP3571034B2 (ja) 2002-06-18 2004-09-29 独立行政法人 科学技術振興機構 磁気抵抗ランダムアクセスメモリー装置
JP2004186659A (ja) * 2002-10-07 2004-07-02 Alps Electric Co Ltd 磁気検出素子
JP2004273969A (ja) * 2003-03-12 2004-09-30 Sony Corp 磁気記憶装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002093661A1 (en) * 2001-05-15 2002-11-21 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element
JP2003347521A (ja) * 2002-05-29 2003-12-05 Samsung Electronics Co Ltd 磁気抵抗ｒａｍ及びその製造方法
JP2004179250A (ja) * 2002-11-25 2004-06-24 Yamaha Corp 磁気トンネル接合素子の製法と磁気トンネル接合装置
JP2004319725A (ja) * 2003-04-16 2004-11-11 Fujitsu Ltd 磁気ランダムアクセスメモリ装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7932572B2 (en) 2008-02-15 2011-04-26 Renesas Electronics Corporation Semiconductor device having memory element with stress insulating film
US8198691B2 (en) 2008-02-15 2012-06-12 Renesas Electronics Corporation Semiconductor device having memory element with stress insulating film
JP2009212323A (ja) * 2008-03-05 2009-09-17 Sony Corp 不揮発性磁気メモリ装置
US7933145B2 (en) 2008-03-05 2011-04-26 Sony Corporation Nonvolatile magnetic memory device
CN101527166B (zh) * 2008-03-05 2012-06-13 索尼株式会社 非易失性磁存储装置
JP2010165790A (ja) * 2009-01-14 2010-07-29 Sony Corp 不揮発性磁気メモリ装置
US8659102B2 (en) 2009-01-14 2014-02-25 Sony Corporation Nonvolatile magnetic memory device
US9508919B2 (en) 2009-01-14 2016-11-29 Sony Corporation Nonvolatile magnetic memory device
US10128432B2 (en) 2009-01-14 2018-11-13 Sony Corporation Nonvolatile magnetic memory device
US10886456B2 (en) 2009-01-14 2021-01-05 Sony Corporation Nonvolatile magnetic memory device
JP2012039124A (ja) * 2011-08-30 2012-02-23 Sony Corp 不揮発性磁気メモリ装置

Also Published As

Publication number Publication date
TWI281667B (en) 2007-05-21
KR100743034B1 (ko) 2007-07-27
CN1783334A (zh) 2006-06-07
CN1783334B (zh) 2010-04-21
US20060114714A1 (en) 2006-06-01
US7215566B2 (en) 2007-05-08
TW200629272A (en) 2006-08-16
KR20060059793A (ko) 2006-06-02

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