KR100726748B1 - 온도제어방법, 열처리장치 및 반도체장치의 제조방법 - Google Patents
온도제어방법, 열처리장치 및 반도체장치의 제조방법 Download PDFInfo
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Abstract
Description
Claims (9)
- 삭제
- 소정위치에서의 검출온도를 그 목표온도로 하도록, 2 개 이상의 가열 영역을 갖는 가열장치를 제어하는 온도제어방법으로서,상기 가열 영역의 수보다 많으며, 또한 각 가열 영역에 있어서 하나 이상의 소정위치에서의 온도를 검출하며,검출된 복수의 소정위치에 있어서의 검출온도의 최대값과 최소값 사이에 상기 목표온도가 포함되도록 상기 가열장치를 제어하며,각 영역에 대응하는 제 1 소정위치에 제 1 온도검출기를 구비하며, 상기 제 1 온도검출기에 의한 검출온도를 제 1 목표온도로 하도록 상기 가열장치를 제어하는 온도제어방법에 이용되며,제 1 소정위치보다 피처리물에 가까운 제 2 소정위치에 제 2 온도검출기를 구비하며, 상기 제 1 온도검출기에 있어서의 상기 제 1 목표온도를 변화시킨 경우에, 상기 제 2 온도검출기의 검출온도가 변화하는 정도를 나타내는 계수의 행렬인 간섭행렬 (M), 및 상기 제 2 온도검출기에 있어서의 제 2 목표온도와 상기 제 2 온도검출기에 의한 검출온도와의 차 (P0) 를 취득하고,상기 간섭행렬 (M) 과 오차 (P0) 에 기초하여, 상기 제 1 목표온도를 보정하는 것을 특징으로 하는 온도제어방법.
- 제 2 항에 있어서,상기 보정된 제 1 목표온도를 이용하여 온도제어를 행함으로써, 새로운 오차 (P0') 를 구하고, 상기 오차 (P0') 와 상기 간섭행렬 (M) 을 이용하여, 상기 보정된 상기 제 1 목표온도를 다시 보정하는 것을 특징으로 하는 온도제어방법.
- 처리실;하나 이상의 가열 영역을 가지며, 상기 처리실내에 설치된 피처리물을 가열하는 가열장치;상기 가열장치에 의한 가열온도를 제 1 소정위치에서 검출하기 위하여, 각 영역에 하나 이상의 설치된 제 1 온도검출기를 구비하며,상기 제 1 온도검출기에 의하여 검출된 제 1 검출온도와, 상기 제 1 검출온도에 관한 제 1 목표온도에 기초하여 상기 가열장치를 제어하는 온도제어방법에 있어서,상기 가열 영역의 수보다 많고, 상기 제 1 소정위치보다 상기 피처리물에 가까운 제 2 소정위치에 있어서 상기 가열장치에 의한 가열온도를 검출하는 복수의 제 2 온도검출기를 구비하며,상기 제 2 온도검출기에 의하여 검출되는 제 2 검출온도와 이 제 2 검출온도에 관한 제 2 목표온도를 비교하여 상기 제 1 목표온도의 보정값을 취득하고, 상기 보정값에 의하여 상기 제 1 목표온도를 보정하여 온도제어를 수행하는 것을 특징으로 하는 온도제어방법.
- 제 4 항에 있어서,상기 보정값의 취득은 실제로 피처리기판을 처리하는 실제 프로세스 전에 행해지는 것을 특징으로 하는 온도제어방법.
- 삭제
- 삭제
- 처리실;하나 이상의 가열 영역을 가지며, 상기 처리실내에 설치된 피처리물을 가열하는 가열장치;상기 가열장치에 의한 가열온도를 제 1 소정위치에서 검출하기 위하여, 각 영역에 하나 이상의 설치된 제 1 온도검출기를 구비하며,상기 제 1 온도검출기에 의하여 검출된 제 1 검출온도와, 상기 제 1 검출온도에 관한 제 1 목표온도에 기초하여 상기 가열장치를 제어하고, 피처리 기판에 가열 처리를 실시하는 열처리장치에 있어서,상기 가열 영역의 수보다 많고, 상기 제 1 소정위치보다 상기 피처리물에 가까운 제 2 소정위치에 있어서 상기 가열장치에 의한 가열온도를 검출하는 복수의 제 2 온도검출기와,상기 제 2 온도검출기에 의하여 검출되는 제 2 검출온도와 이 제 2 검출온도에 관한 제 2 목표온도를 비교하여 상기 제 1 목표온도의 보정값을 취득하고, 상기 보정값에 의하여 상기 제 1 목표온도를 보정하여 온도제어를 수행하는 제어 장치를 구비하여 이루어지는 열처리장치.
- 처리실;하나 이상의 가열 영역을 가지며, 상기 처리실내에 설치된 피처리물을 가열하는 가열장치;상기 가열장치에 의한 가열온도를 제 1 소정위치에서 검출하기 위하여, 각 영역에 하나 이상의 설치된 제 1 온도검출기를 구비하며,상기 제 1 온도검출기에 의하여 검출된 제 1 검출온도와, 상기 제 1 검출온도에 관한 제 1 목표온도에 기초하여 상기 가열장치를 제어하고, 피처리 기판에 가열 처리를 실시하는 반도체장치의 제조방법에 있어서,상기 가열 영역의 수보다 많고, 상기 제 1 소정위치보다 상기 피처리물에 가까운 제 2 소정위치에 있어서 상기 가열장치에 의한 가열온도를 검출하는 복수의 제 2 온도검출기를 구비하며,상기 제 2 온도검출기에 의하여 검출되는 제 2 검출온도와 이 제 2 검출온도에 관한 제 2 목표온도를 비교하여 상기 제 1 목표온도의 보정값을 취득하고, 상기 보정값에 의하여 상기 제 1 목표온도를 보정하여 온도제어를 수행하는 것을 특징으로 하는 반도체장치의 제조방법.
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JP2001272218A JP3834216B2 (ja) | 2000-09-29 | 2001-09-07 | 温度制御方法 |
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US20030115978A1 (en) * | 2001-12-20 | 2003-06-26 | Moehnke Stephanie J. | Apparatus and method for monitoring environment within a container |
JP3451554B1 (ja) * | 2002-06-12 | 2003-09-29 | オムロン株式会社 | 異常検出方法、異常検出装置および温度調節器 |
KR20040003885A (ko) * | 2002-07-04 | 2004-01-13 | 삼성전자주식회사 | 확산로 온도 검출장치 |
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JP2002175123A (ja) | 2002-06-21 |
KR20020025789A (ko) | 2002-04-04 |
TW554067B (en) | 2003-09-21 |
JP3834216B2 (ja) | 2006-10-18 |
KR100956535B1 (ko) | 2010-05-07 |
KR20070077509A (ko) | 2007-07-26 |
US6746908B2 (en) | 2004-06-08 |
KR20090037876A (ko) | 2009-04-16 |
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US20020055080A1 (en) | 2002-05-09 |
KR100762157B1 (ko) | 2007-10-01 |
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