KR20070009510A - 온도제어방법, 열처리장치 및 반도체장치의 제조방법 - Google Patents
온도제어방법, 열처리장치 및 반도체장치의 제조방법 Download PDFInfo
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- KR20070009510A KR20070009510A KR1020060133918A KR20060133918A KR20070009510A KR 20070009510 A KR20070009510 A KR 20070009510A KR 1020060133918 A KR1020060133918 A KR 1020060133918A KR 20060133918 A KR20060133918 A KR 20060133918A KR 20070009510 A KR20070009510 A KR 20070009510A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0006—Monitoring the characteristics (composition, quantities, temperature, pressure) of at least one of the gases of the kiln atmosphere and using it as a controlling value
- F27D2019/0018—Monitoring the temperature of the atmosphere of the kiln
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0028—Regulation
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- Condensed Matter Physics & Semiconductors (AREA)
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- Chemical Vapour Deposition (AREA)
- Control Of Temperature (AREA)
Abstract
Description
Claims (6)
- 소정 위치에서의 검출 온도를 그 목표 온도로 하도록, 2개 이상의 가열 영역을 갖는 가열 장치를 제어하는 온도 제어 방법으로서,상기 가열 영역의 수보다 많으며, 또한 각 가열 영역에 있어서 하나 이상의 소정 위치에서의 온도를 검출하며,검출된 복수의 소정 위치에 있어서의 검출 온도와, 상기 목표 온도의 차를 축소하도록 상기 가열 장치를 제어하는 것을 특징으로 하는 온도 제어 방법.
- 처리실과,소정 위치에서의 검출 온도를 그 목표 온도로 하도록 온도 제어되는, 2개 이상의 가열 영역을 갖는 가열 장치와,상기 가열 영역의 수보다 많으며, 또한 각 가열 영역에 있어서 하나 이상의 소정 위치에서의 온도를 검출하는 복수의 온도 검출기와,상기 복수의 온도 검출기에 의한 복수의 검출 온도와, 상기 목표 온도의 차를 축소하도록 상기 가열 장치를 제어하는 제어 장치를 구비하여 이루어지는 열처리 장치.
- 소정 위치에서의 검출 온도를 그 목표 온도로 하도록, 2개 이상의 가열 영역을 갖는 가열 장치를 제어하고, 피처리 기판에 가열 처리를 실시하는 반도체 장치 의 제조 방법으로서,상기 가열 영역의 수보다 많으며, 또한 각 가열 영역에 있어서의 하나 이상의 소정 위치에서의 온도를 검출하고, 검출된 복수의 소정 위치에 있어서의 검출 온도와, 상기 목표 온도의 차를 축소하도록 상기 가열 장치를 제어하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 소정 위치에서의 검출 온도를 그 목표 온도로 하도록, 2개 이상의 가열 영역을 갖는 가열 장치를 제어하는 온도 제어 방법으로서,상기 가열 영역의 수보다 많으며, 또한 각 가열 영역에 있어서 하나 이상의 소정 위치에서의 온도를 검출하고, 검출된 복수의 검출 온도의 최대값과 최소값 사이에 상기 목표 온도가 포함되도록 상기 복수의 소정 위치에 있어서의 검출 온도와, 상기 목표 온도의 차를 축소하도록 상기 가열 장치를 제어하는 것을 특징으로 하는 온도 제어 방법.
- 처리실과,소정 위치에서의 검출 온도를 그 목표 온도로 하도록 온도 제어되는, 2개 이상의 가열 영역을 갖는 가열 장치와,상기 가열 영역의 수보다 많으며, 또한 각 가열 영역에 있어서 하나 이상의 소정 위치에서의 온도를 검출하는 복수의 온도 검출기와,상기 복수의 온도 검출기에 의한 복수의 검출 온도의 최대값과 최소값 사이 에 상기 목표 온도가 포함되도록 상기 복수의 검출 온도와, 상기 목표 온도의 차를 축소하도록 상기 가열 장치를 제어하는 제어 장치를 구비하여 이루어지는 열처리 장치.
- 소정 위치에서의 검출 온도를 그 목표 온도로 하도록, 2개 이상의 가열 영역을 갖는 가열 장치를 제어하고, 피처리 기판에 가열 처리를 실시하는 반도체 장치의 제조 방법으로서,상기 가열 영역의 수보다 많으며, 또한 각 가열 영역에 있어서의 하나 이상의 소정 위치에서의 온도를 검출하고, 검출된 상기 복수의 검출 온도의 최대값과 최소값 사이에 상기 목표 온도가 포함되도록 상기 복수의 소정 위치에 있어서의 검출 온도와, 상기 목표 온도의 차를 축소하도록 상기 가열 장치를 제어하는 것을 특징으로 하는 반도체 장치의 제조 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2000-00298858 | 2000-09-29 | ||
JP2000298858 | 2000-09-29 | ||
JP2001272218A JP3834216B2 (ja) | 2000-09-29 | 2001-09-07 | 温度制御方法 |
JPJP-P-2001-00272218 | 2001-09-07 |
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KR1020010060364A Division KR100726748B1 (ko) | 2000-09-29 | 2001-09-28 | 온도제어방법, 열처리장치 및 반도체장치의 제조방법 |
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KR1020070068223A Division KR20070077509A (ko) | 2000-09-29 | 2007-07-06 | 온도제어방법, 열처리장치 및 반도체장치의 제조방법 |
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KR20070009510A true KR20070009510A (ko) | 2007-01-18 |
KR100762157B1 KR100762157B1 (ko) | 2007-10-01 |
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KR1020010060364A KR100726748B1 (ko) | 2000-09-29 | 2001-09-28 | 온도제어방법, 열처리장치 및 반도체장치의 제조방법 |
KR1020060133918A KR100762157B1 (ko) | 2000-09-29 | 2006-12-26 | 온도제어방법, 열처리장치 및 반도체장치의 제조방법 |
KR1020070068223A KR20070077509A (ko) | 2000-09-29 | 2007-07-06 | 온도제어방법, 열처리장치 및 반도체장치의 제조방법 |
KR1020090027030A KR100956535B1 (ko) | 2000-09-29 | 2009-03-30 | 온도제어방법, 열처리장치 및 반도체장치의 제조방법 |
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KR1020010060364A KR100726748B1 (ko) | 2000-09-29 | 2001-09-28 | 온도제어방법, 열처리장치 및 반도체장치의 제조방법 |
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KR1020070068223A KR20070077509A (ko) | 2000-09-29 | 2007-07-06 | 온도제어방법, 열처리장치 및 반도체장치의 제조방법 |
KR1020090027030A KR100956535B1 (ko) | 2000-09-29 | 2009-03-30 | 온도제어방법, 열처리장치 및 반도체장치의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6746908B2 (ko) |
JP (1) | JP3834216B2 (ko) |
KR (4) | KR100726748B1 (ko) |
TW (1) | TW554067B (ko) |
Families Citing this family (32)
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US20030115978A1 (en) * | 2001-12-20 | 2003-06-26 | Moehnke Stephanie J. | Apparatus and method for monitoring environment within a container |
JP3451554B1 (ja) * | 2002-06-12 | 2003-09-29 | オムロン株式会社 | 異常検出方法、異常検出装置および温度調節器 |
KR20040003885A (ko) * | 2002-07-04 | 2004-01-13 | 삼성전자주식회사 | 확산로 온도 검출장치 |
JP4523225B2 (ja) * | 2002-09-24 | 2010-08-11 | 東京エレクトロン株式会社 | 熱処理装置 |
CN100367458C (zh) * | 2002-10-25 | 2008-02-06 | 东京毅力科创株式会社 | 热处理装置和热处理方法 |
US7346273B2 (en) | 2003-07-28 | 2008-03-18 | Hitachi Kokusai Electric Inc | Substrate processing equipment |
KR100790719B1 (ko) * | 2003-11-12 | 2007-12-31 | 동부일렉트로닉스 주식회사 | 구역별 온도제어가 가능한 용액조 및 그 온도제어방법 |
JP4623705B2 (ja) * | 2004-03-26 | 2011-02-02 | 大日本スクリーン製造株式会社 | 基板加熱時の出力の決定方法 |
US20050247266A1 (en) * | 2004-05-04 | 2005-11-10 | Patel Nital S | Simultaneous control of deposition time and temperature of multi-zone furnaces |
JP2006113724A (ja) * | 2004-10-13 | 2006-04-27 | Omron Corp | 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体 |
KR100874500B1 (ko) * | 2004-12-27 | 2008-12-18 | 가부시키가이샤 히다치 고쿠사이 덴키 | 온도조정방법, 열처리장치, 반도체장치의 제조방법 |
KR100849012B1 (ko) * | 2005-02-17 | 2008-07-30 | 도쿄엘렉트론가부시키가이샤 | 열처리 장치 및 열처리 방법 |
JP4839702B2 (ja) * | 2005-07-04 | 2011-12-21 | オムロン株式会社 | 温度制御方法、調整装置、温度調節器、プログラム、記録媒体および熱処理装置 |
US8367975B2 (en) * | 2006-03-09 | 2013-02-05 | Hitachi Kokusai Electric Inc. | Temperature adjustment method |
JP4802019B2 (ja) * | 2006-03-14 | 2011-10-26 | パナソニック株式会社 | 基板処理装置の温度制御方法、基板処理装置および基板処理システム |
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JPH0855810A (ja) * | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
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JPH1038702A (ja) * | 1996-07-18 | 1998-02-13 | Dainippon Screen Mfg Co Ltd | 基板温度計測方法および基板温度制御方法、並びに、これを利用した基板処理装置 |
JP4551515B2 (ja) * | 1998-10-07 | 2010-09-29 | 株式会社日立国際電気 | 半導体製造装置およびその温度制御方法 |
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KR20020025789A (ko) | 2002-04-04 |
TW554067B (en) | 2003-09-21 |
JP3834216B2 (ja) | 2006-10-18 |
KR100956535B1 (ko) | 2010-05-07 |
KR100726748B1 (ko) | 2007-06-11 |
KR20070077509A (ko) | 2007-07-26 |
US6746908B2 (en) | 2004-06-08 |
KR20090037876A (ko) | 2009-04-16 |
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KR100762157B1 (ko) | 2007-10-01 |
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