KR100723894B1 - 데이터 판독 회로, 데이터 판독 방법 및 데이터 기억 장치 - Google Patents

데이터 판독 회로, 데이터 판독 방법 및 데이터 기억 장치 Download PDF

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KR100723894B1
KR100723894B1 KR1020010019484A KR20010019484A KR100723894B1 KR 100723894 B1 KR100723894 B1 KR 100723894B1 KR 1020010019484 A KR1020010019484 A KR 1020010019484A KR 20010019484 A KR20010019484 A KR 20010019484A KR 100723894 B1 KR100723894 B1 KR 100723894B1
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potential
bit line
charge
data
voltage
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KR20020034835A (ko
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야마모토아키라
가와시마쇼이치로
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후지쯔 가부시끼가이샤
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Computer Hardware Design (AREA)
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KR1020010019484A 2000-10-31 2001-04-12 데이터 판독 회로, 데이터 판독 방법 및 데이터 기억 장치 Expired - Fee Related KR100723894B1 (ko)

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JP2000-333160 2000-10-31
JP2000333160A JP4031904B2 (ja) 2000-10-31 2000-10-31 データ読み出し回路とデータ読み出し方法及びデータ記憶装置

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KR1020070041025A Division KR100903045B1 (ko) 2000-10-31 2007-04-26 데이터 판독 회로, 데이터 판독 방법 및 데이터 기억 장치

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KR100723894B1 true KR100723894B1 (ko) 2007-06-04

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KR1020070041025A Expired - Fee Related KR100903045B1 (ko) 2000-10-31 2007-04-26 데이터 판독 회로, 데이터 판독 방법 및 데이터 기억 장치

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US (2) US6487103B2 (enExample)
JP (1) JP4031904B2 (enExample)
KR (2) KR100723894B1 (enExample)

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AU2003281556A1 (en) * 2002-07-23 2004-02-09 Matsushita Electric Industrial Co., Ltd. Ferroelectric gate device
CN100446118C (zh) * 2003-03-19 2008-12-24 富士通微电子株式会社 半导体存储装置
JP4185969B2 (ja) * 2003-04-10 2008-11-26 富士通マイクロエレクトロニクス株式会社 強誘電体メモリおよびそのデータ読み出し方法
US7193880B2 (en) * 2004-06-14 2007-03-20 Texas Instruments Incorporated Plateline voltage pulsing to reduce storage node disturbance in ferroelectric memory
JP2005129151A (ja) 2003-10-23 2005-05-19 Fujitsu Ltd 半導体記憶装置
US7009864B2 (en) * 2003-12-29 2006-03-07 Texas Instruments Incorporated Zero cancellation scheme to reduce plateline voltage in ferroelectric memory
JP4336212B2 (ja) 2004-01-26 2009-09-30 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
US7227769B2 (en) 2004-03-08 2007-06-05 Fujitsu Limited Semiconductor memory
JP4157528B2 (ja) 2004-03-08 2008-10-01 富士通株式会社 半導体メモリ
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory
US6970371B1 (en) * 2004-05-17 2005-11-29 Texas Instruments Incorporated Reference generator system and methods for reading ferroelectric memory cells using reduced bitline voltages
JP4064951B2 (ja) 2004-07-28 2008-03-19 株式会社東芝 強誘電体半導体記憶装置
JP2006179048A (ja) * 2004-12-21 2006-07-06 Sanyo Electric Co Ltd 半導体装置
JP4647313B2 (ja) * 2005-01-06 2011-03-09 富士通セミコンダクター株式会社 半導体メモリ
JP4452631B2 (ja) 2005-01-21 2010-04-21 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP2006260742A (ja) 2005-02-15 2006-09-28 Sanyo Electric Co Ltd メモリ
JP4186119B2 (ja) 2005-07-27 2008-11-26 セイコーエプソン株式会社 強誘電体メモリ装置
US20070103961A1 (en) * 2005-11-07 2007-05-10 Honeywell International Inc. RAM cell with soft error protection using ferroelectric material
JP4305960B2 (ja) * 2005-12-28 2009-07-29 セイコーエプソン株式会社 強誘電体メモリ装置
JP4983062B2 (ja) * 2006-03-20 2012-07-25 富士通セミコンダクター株式会社 メモリ装置
JP4996177B2 (ja) * 2006-08-30 2012-08-08 富士通セミコンダクター株式会社 半導体記憶装置、およびデータ読み出し方法
JP4186169B2 (ja) 2006-09-01 2008-11-26 セイコーエプソン株式会社 強誘電体記憶装置および電子機器
JP4807192B2 (ja) * 2006-09-01 2011-11-02 セイコーエプソン株式会社 正電位変換回路、強誘電体記憶装置および電子機器
JP4807191B2 (ja) * 2006-09-01 2011-11-02 セイコーエプソン株式会社 強誘電体記憶装置および電子機器
JP4207077B2 (ja) 2006-10-02 2009-01-14 セイコーエプソン株式会社 強誘電体メモリ装置及びその駆動方法並びに電子機器
KR20080051076A (ko) 2006-12-04 2008-06-10 세이코 엡슨 가부시키가이샤 강유전체 기억 장치 및 전자 기기
US7561458B2 (en) * 2006-12-26 2009-07-14 Texas Instruments Incorporated Ferroelectric memory array for implementing a zero cancellation scheme to reduce plateline voltage in ferroelectric memory
US7916556B2 (en) 2007-01-09 2011-03-29 Sony Corporation Semiconductor memory device, sense amplifier circuit and memory cell reading method using a threshold correction circuitry
JP5024374B2 (ja) 2007-05-18 2012-09-12 富士通セミコンダクター株式会社 半導体メモリ
JP2008305469A (ja) 2007-06-06 2008-12-18 Toshiba Corp 半導体記憶装置
KR101139163B1 (ko) 2007-09-14 2012-04-26 후지쯔 세미컨덕터 가부시키가이샤 반도체 메모리
US7920404B2 (en) * 2007-12-31 2011-04-05 Texas Instruments Incorporated Ferroelectric memory devices with partitioned platelines
JP2009301658A (ja) 2008-06-13 2009-12-24 Seiko Epson Corp 強誘電体記憶装置、強誘電体記憶装置の駆動方法および電子機器
TWI480526B (zh) * 2009-12-24 2015-04-11 Seiko Epson Corp 紅外線檢測電路、感測器裝置及電子機器
JP5500051B2 (ja) 2010-11-22 2014-05-21 富士通セミコンダクター株式会社 強誘電体メモリ
JP6145972B2 (ja) * 2012-03-05 2017-06-14 富士通セミコンダクター株式会社 不揮発性ラッチ回路及びメモリ装置
JP6370649B2 (ja) * 2014-09-09 2018-08-08 エイブリック株式会社 データ読出し回路
US9638672B2 (en) * 2015-03-06 2017-05-02 Bongiovi Acoustics Llc System and method for acquiring acoustic information from a resonating body
US9552864B1 (en) * 2016-03-11 2017-01-24 Micron Technology, Inc. Offset compensation for ferroelectric memory cell sensing
US10192606B2 (en) * 2016-04-05 2019-01-29 Micron Technology, Inc. Charge extraction from ferroelectric memory cell using sense capacitors
US9858979B1 (en) * 2016-10-05 2018-01-02 Micron Technology, Inc. Reprogrammable non-volatile ferroelectric latch for use with a memory controller
US10388353B1 (en) * 2018-03-16 2019-08-20 Micron Technology, Inc. Canceling memory cell variations by isolating digit lines
US10803910B2 (en) 2018-07-25 2020-10-13 Fujitsu Semiconductor Limited Semiconductor storage device and read method thereof
US11043252B2 (en) 2018-07-25 2021-06-22 Fujitsu Semiconductor Memory Solution Limited Semiconductor storage device, read method thereof, and test method thereof
US10692557B1 (en) 2019-04-11 2020-06-23 Micron Technology, Inc. Reference voltage management

Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH09185890A (ja) * 1996-01-08 1997-07-15 Hitachi Ltd 強誘電体記憶装置

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JP3319637B2 (ja) * 1993-11-10 2002-09-03 松下電器産業株式会社 半導体記憶装置及びその制御方法
DE69736080T2 (de) * 1996-03-25 2006-10-19 Matsushita Electric Industrial Co., Ltd., Kadoma Ferroelekrische Speicheranordnung
JP3897388B2 (ja) * 1996-12-27 2007-03-22 シャープ株式会社 シリアルアクセス方式の半導体記憶装置
KR100256226B1 (ko) * 1997-06-26 2000-05-15 김영환 레퍼런스 전압 발생 장치
KR100275107B1 (ko) * 1997-12-30 2000-12-15 김영환 강유전체메모리장치및그구동방법

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH09185890A (ja) * 1996-01-08 1997-07-15 Hitachi Ltd 強誘電体記憶装置

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JP2002133857A (ja) 2002-05-10
US6661697B2 (en) 2003-12-09
US20020051376A1 (en) 2002-05-02
US20030031042A1 (en) 2003-02-13
KR20020034835A (ko) 2002-05-09
US6487103B2 (en) 2002-11-26
KR100903045B1 (ko) 2009-06-18
KR20070056015A (ko) 2007-05-31
JP4031904B2 (ja) 2008-01-09

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