KR100719783B1 - 화학 증폭형 포지티브 내식막 조성물 - Google Patents
화학 증폭형 포지티브 내식막 조성물 Download PDFInfo
- Publication number
- KR100719783B1 KR100719783B1 KR1020010017431A KR20010017431A KR100719783B1 KR 100719783 B1 KR100719783 B1 KR 100719783B1 KR 1020010017431 A KR1020010017431 A KR 1020010017431A KR 20010017431 A KR20010017431 A KR 20010017431A KR 100719783 B1 KR100719783 B1 KR 100719783B1
- Authority
- KR
- South Korea
- Prior art keywords
- formula
- resin
- unit
- polymerized
- adamantyl
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
Claims (5)
- 다음 중합 단위(A), (B) 및 (C)를 갖고, 자체적으로는 알칼리에 불용성이지만, 산의 작용에 의해 알칼리 가용성으로 되는 수지; 및 산 발생제를 포함하는 화학 증폭형 포지티브 내식막 조성물:(A) 다음 화학식 1a 및 1b의 중합 단위로부터 선택된 지환족 락톤인 중합 단위 하나 이상:화학식 1a화학식 1b위의 화학식 1a 및 1b에서,R1 및 R2는 서로 독립적으로 수소 또는 메틸이고,n은 1 내지 3의 수이다.(B) 다음 화학식 2의 3-하이드록실-1-아다만틸 (메트)아크릴레이트의 중합 단위, 다음 화학식 3의 단위와 말레산 무수물 및 이타콘산 무수물로부터 선택된 불포화 디카복실산 무수물로부터 유도된 단위의 배합물인 중합 단위, 및 다음 화학식 4의 (α)β-(메트)아크릴로일옥시-γ-부티로락톤인 중합 단위로부터 선택된 중합 단위 하나 이상:화학식 2화학식 3화학식 4위의 화학식 2 내지 4에서,R3 및 R7은 수소 또는 메틸이고,R4는 수소 또는 하이드록실 그룹이고,R5 및 R6은 서로 독립적으로 수소, 탄소수 1 내지 3의 알킬, 탄소수 1 내지 3의 하이드록시알킬, 카복실, 시아노 또는 화학식 -COOR7의 그룹(여기서, R7은 알코올 잔기이다)이거나, R5와 R6은 함께 화학식 -C(=O)OC(=O)-의 카복실산 무수물 잔기를 형성한다.(C) 산의 작용에 의해 그룹의 일부가 개열됨으로써 알칼리 가용성으로 되는 중합 단위.
- 제1항에 있어서, 산의 작용에 의해 그룹의 일부가 개열됨으로써 알칼리 가용성으로 되는 중합 단위(C)가 2-알킬-2-아다만틸 (메트)아크릴레이트로부터 유도된 중합 단위인 화학 증폭형 포지티브 내식막 조성물.
- 제2항에 있어서, 2-알킬-2-아다만틸 (메트)아크릴레이트가 2-에틸-2-아다만틸 (메트)아크릴레이트인 화학 증폭형 포지티브 내식막 조성물.
- 제1항에 있어서, 수지가 중합 단위(A)가 유도되는 단량체, 중합 단위(B)가 유도되는 단량체 및 중합 단위(C)가 유도되는 단량체를 공중합시킴으로써 제조되고, 공중합에 사용되는 모든 단량체의 총량을 기준으로 하여, 중합 단위(A)가 유도되는 단량체의 양은 5 내지 50mol%이고, 중합 단위(B)가 유도되는 단량체의 양은 10 내지 80mol%이며, 중합 단위(C)가 유도되는 단량체의 양은 10 내지 80mol%인 화학 증폭형 포지티브 내식막 조성물.
- 제1항에 있어서, 반응 정지제(quencher)를 추가로 포함하는 화학 증폭형 포지티브 내식막 조성물.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000101868 | 2000-04-04 | ||
JP2000133328 | 2000-05-02 | ||
JP2000209505 | 2000-07-11 | ||
JP2000-209505 | 2001-01-23 | ||
JP2000-101868 | 2001-01-23 | ||
JP2000-133328 | 2001-01-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010095239A KR20010095239A (ko) | 2001-11-03 |
KR100719783B1 true KR100719783B1 (ko) | 2007-05-21 |
Family
ID=27342974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010017431A KR100719783B1 (ko) | 2000-04-04 | 2001-04-02 | 화학 증폭형 포지티브 내식막 조성물 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6579659B2 (ko) |
EP (1) | EP1143299B1 (ko) |
KR (1) | KR100719783B1 (ko) |
CN (1) | CN1210623C (ko) |
DE (1) | DE60100463T2 (ko) |
SG (1) | SG94799A1 (ko) |
TW (1) | TW507116B (ko) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100382960B1 (ko) | 1998-07-03 | 2003-05-09 | 닛뽕덴끼 가부시끼가이샤 | 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법 |
US6808860B2 (en) * | 2000-04-17 | 2004-10-26 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
US6815143B2 (en) * | 2001-01-22 | 2004-11-09 | Shin-Etsu Chemical Co., Ltd. | Resist material and pattern forming method |
JP2002357905A (ja) | 2001-03-28 | 2002-12-13 | Sumitomo Chem Co Ltd | レジスト組成物 |
JP4117112B2 (ja) * | 2001-03-30 | 2008-07-16 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
JP4255100B2 (ja) * | 2001-04-06 | 2009-04-15 | 富士フイルム株式会社 | ArFエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 |
JP2002341541A (ja) * | 2001-05-18 | 2002-11-27 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
US7192681B2 (en) * | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
JP3821217B2 (ja) * | 2001-10-30 | 2006-09-13 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP3803286B2 (ja) * | 2001-12-03 | 2006-08-02 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターンの形成方法 |
JP3836359B2 (ja) * | 2001-12-03 | 2006-10-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
JP3895224B2 (ja) * | 2001-12-03 | 2007-03-22 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
JP3918542B2 (ja) * | 2001-12-11 | 2007-05-23 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP3822101B2 (ja) * | 2001-12-26 | 2006-09-13 | 株式会社ルネサステクノロジ | 感放射線組成物及びパタン形成方法及び半導体装置の製造方法 |
WO2003082933A1 (fr) * | 2002-04-01 | 2003-10-09 | Daicel Chemical Industries, Ltd. | Procede de production de composes a poids moleculaire eleve pour resine photosensible |
JP4145075B2 (ja) * | 2002-05-27 | 2008-09-03 | 富士フイルム株式会社 | 感放射線性樹脂組成物 |
US6639035B1 (en) * | 2002-05-28 | 2003-10-28 | Everlight Usa, Inc. | Polymer for chemical amplified photoresist compositions |
US6720430B2 (en) * | 2002-05-28 | 2004-04-13 | Everlight Usa, Inc. | Monomer for chemical amplified photoresist compositions |
US6703178B2 (en) * | 2002-05-28 | 2004-03-09 | Everlight Usa, Inc. | Chemical amplified photoresist compositions |
JP4357830B2 (ja) * | 2002-12-02 | 2009-11-04 | 東京応化工業株式会社 | レジスト用(メタ)アクリル酸誘導体ポリマーの製造方法 |
KR20050094828A (ko) * | 2002-12-26 | 2005-09-28 | 도오꾜오까고오교 가부시끼가이샤 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
JP4749664B2 (ja) * | 2003-01-29 | 2011-08-17 | 東京応化工業株式会社 | 電子材料用粗樹脂の精製方法、化学増幅型ホトレジスト組成物及びその製造方法 |
CN1326895C (zh) * | 2003-01-29 | 2007-07-18 | 东京应化工业株式会社 | 精制电子材料用粗树脂的方法 |
JP4235466B2 (ja) * | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
WO2004077158A1 (ja) * | 2003-02-25 | 2004-09-10 | Tokyo Ohka Kogyo Co., Ltd. | ホトレジスト組成物およびレジストパターンの形成方法 |
US7279265B2 (en) * | 2003-03-27 | 2007-10-09 | Fujifilm Corporation | Positive resist composition and pattern formation method using the same |
KR20040084850A (ko) * | 2003-03-28 | 2004-10-06 | 스미또모 가가꾸 고교 가부시끼가이샤 | 화학 증폭 레지스트 조성물 |
JP4012480B2 (ja) * | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
JP4083053B2 (ja) * | 2003-03-31 | 2008-04-30 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP2004333548A (ja) * | 2003-04-30 | 2004-11-25 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物およびレジストパターン形成方法 |
TW200506531A (en) * | 2003-05-16 | 2005-02-16 | Clariant Int Ltd | Photoresist composition for deep uv and process thereof |
JP4439270B2 (ja) * | 2003-06-18 | 2010-03-24 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
EP1641848B1 (en) * | 2003-06-26 | 2007-08-22 | JSR Corporation | Photoresist polymer compositions |
US7250475B2 (en) * | 2003-06-26 | 2007-07-31 | Symyx Technologies, Inc. | Synthesis of photoresist polymers |
WO2005000924A1 (en) * | 2003-06-26 | 2005-01-06 | Symyx Technologies, Inc. | Photoresist polymers |
JP2005031233A (ja) * | 2003-07-09 | 2005-02-03 | Tokyo Ohka Kogyo Co Ltd | レジスト組成物、積層体、及びレジストパターン形成方法 |
KR100758870B1 (ko) * | 2003-09-25 | 2007-09-14 | 도오꾜오까고오교 가부시끼가이샤 | 저가속 전자선용 포지티브형 레지스트 조성물, 레지스트적층체 및 패턴 형성 방법 |
JP2005164633A (ja) * | 2003-11-28 | 2005-06-23 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物及びレジストパターン形成方法 |
JP2005171093A (ja) * | 2003-12-11 | 2005-06-30 | Maruzen Petrochem Co Ltd | 半導体リソグラフィー用共重合体の製造方法及び該方法により得られる半導体リソグラフィー用共重合体 |
CN1645254B (zh) * | 2004-01-21 | 2010-05-12 | 住友化学株式会社 | 化学放大型正光刻胶组合物 |
JP2006096965A (ja) * | 2004-02-20 | 2006-04-13 | Tokyo Ohka Kogyo Co Ltd | 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法 |
TW200604740A (en) * | 2004-03-08 | 2006-02-01 | Rohm & Haas Elect Mat | Cyanoadamantyl compounds and polymers and photoresists comprising same |
US7368218B2 (en) * | 2004-04-09 | 2008-05-06 | Shin-Etsu Chemical Co., Ltd. | Positive resist compositions and patterning process |
US7232642B2 (en) * | 2004-05-11 | 2007-06-19 | Sumitomo Chemical Company, Limited | Chemically amplified positive resist composition, a haloester derivative and a process for producing the same |
JP4274057B2 (ja) * | 2004-06-21 | 2009-06-03 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP4714488B2 (ja) * | 2004-08-26 | 2011-06-29 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
US7537879B2 (en) | 2004-11-22 | 2009-05-26 | Az Electronic Materials Usa Corp. | Photoresist composition for deep UV and process thereof |
US7947421B2 (en) * | 2005-01-24 | 2011-05-24 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
JP4498939B2 (ja) * | 2005-02-01 | 2010-07-07 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4510695B2 (ja) * | 2005-05-10 | 2010-07-28 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
US7476492B2 (en) * | 2006-05-26 | 2009-01-13 | International Business Machines Corporation | Low activation energy photoresist composition and process for its use |
US7618764B2 (en) * | 2006-11-22 | 2009-11-17 | Shin-Etsu Chemical Co., Ltd. | Positive resist compositions and patterning process |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
KR100931924B1 (ko) * | 2007-10-18 | 2009-12-15 | 금호석유화학 주식회사 | 5-히드록시-1-아다만틸 (메타)아크릴레이트 유도체를포함하는 화학증폭형 포토레지스트용 공중합체 및 이를포함하는 화학증폭형 포토레지스트 조성물 |
US7803521B2 (en) * | 2007-11-19 | 2010-09-28 | International Business Machines Corporation | Photoresist compositions and process for multiple exposures with multiple layer photoresist systems |
US7745077B2 (en) | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
KR101111491B1 (ko) * | 2009-08-04 | 2012-03-14 | 금호석유화학 주식회사 | 신규 공중합체 및 이를 포함하는 포토레지스트 조성물 |
CN102023484A (zh) * | 2009-09-16 | 2011-04-20 | 住友化学株式会社 | 光致抗蚀剂组合物 |
TW201120575A (en) * | 2009-09-16 | 2011-06-16 | Sumitomo Chemical Co | Photoresist composition |
US8852848B2 (en) | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
JP5793388B2 (ja) * | 2011-09-30 | 2015-10-14 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びにそれを用いた感活性光線性又は感放射線性膜及びパターン形成方法 |
KR101704474B1 (ko) * | 2011-12-28 | 2017-02-09 | 금호석유화학 주식회사 | 레지스트용 첨가제 및 이를 포함하는 레지스트 조성물 |
KR20130076364A (ko) * | 2011-12-28 | 2013-07-08 | 금호석유화학 주식회사 | 레지스트용 첨가제 및 이를 포함하는 레지스트 조성물 |
JP5772760B2 (ja) | 2012-08-13 | 2015-09-02 | 信越化学工業株式会社 | ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
KR101400131B1 (ko) * | 2013-02-22 | 2014-05-27 | 금호석유화학주식회사 | 레지스트용 중합체 및 이를 포함하는 레지스트 조성물 |
US9017934B2 (en) | 2013-03-08 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist defect reduction system and method |
US9245751B2 (en) | 2013-03-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective layer and method |
US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
US9502231B2 (en) | 2013-03-12 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer and method |
US8932799B2 (en) | 2013-03-12 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US9256128B2 (en) | 2013-03-12 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing semiconductor device |
US9175173B2 (en) | 2013-03-12 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Unlocking layer and method |
US9354521B2 (en) | 2013-03-12 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US9110376B2 (en) | 2013-03-12 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US9117881B2 (en) | 2013-03-15 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive line system and process |
US9341945B2 (en) | 2013-08-22 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of formation and use |
US10036953B2 (en) | 2013-11-08 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company | Photoresist system and method |
US10095113B2 (en) | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
US9761449B2 (en) | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
US9599896B2 (en) | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US9581908B2 (en) | 2014-05-16 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method |
CN108659223B (zh) * | 2018-04-19 | 2020-12-04 | 中科院广州化学有限公司南雄材料生产基地 | 一种环糊精衍生物型光敏树脂及其制备方法、基于其的抗蚀剂组合物和应用 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0982628A2 (en) * | 1998-08-26 | 2000-03-01 | Sumitomo Chemical Company, Limited | A chemical amplifying type positive resist composition |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2741540B2 (ja) | 1989-07-10 | 1998-04-22 | キヤノン株式会社 | カラー画像形成装置 |
US6200725B1 (en) | 1995-06-28 | 2001-03-13 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
JP3751065B2 (ja) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
KR100206664B1 (ko) | 1995-06-28 | 1999-07-01 | 세키사와 다다시 | 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법 |
JP3738562B2 (ja) | 1998-02-19 | 2006-01-25 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JPH11238542A (ja) | 1998-02-20 | 1999-08-31 | Yazaki Corp | コネクタ |
KR100382960B1 (ko) * | 1998-07-03 | 2003-05-09 | 닛뽕덴끼 가부시끼가이샤 | 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법 |
JP3042618B2 (ja) | 1998-07-03 | 2000-05-15 | 日本電気株式会社 | ラクトン構造を有する(メタ)アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法 |
JP4131062B2 (ja) | 1998-09-25 | 2008-08-13 | 信越化学工業株式会社 | 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
EP1179750B1 (en) * | 2000-08-08 | 2012-07-25 | FUJIFILM Corporation | Positive photosensitive composition and method for producing a precision integrated circuit element using the same |
-
2001
- 2001-04-02 EP EP01107747A patent/EP1143299B1/en not_active Expired - Lifetime
- 2001-04-02 TW TW090107875A patent/TW507116B/zh not_active IP Right Cessation
- 2001-04-02 CN CNB011102306A patent/CN1210623C/zh not_active Expired - Lifetime
- 2001-04-02 DE DE60100463T patent/DE60100463T2/de not_active Expired - Lifetime
- 2001-04-02 KR KR1020010017431A patent/KR100719783B1/ko active IP Right Grant
- 2001-04-03 US US09/824,227 patent/US6579659B2/en not_active Expired - Lifetime
- 2001-04-03 SG SG200101989A patent/SG94799A1/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0982628A2 (en) * | 1998-08-26 | 2000-03-01 | Sumitomo Chemical Company, Limited | A chemical amplifying type positive resist composition |
Also Published As
Publication number | Publication date |
---|---|
TW507116B (en) | 2002-10-21 |
US20010044070A1 (en) | 2001-11-22 |
KR20010095239A (ko) | 2001-11-03 |
DE60100463T2 (de) | 2004-05-13 |
DE60100463D1 (de) | 2003-08-21 |
EP1143299A1 (en) | 2001-10-10 |
US6579659B2 (en) | 2003-06-17 |
EP1143299B1 (en) | 2003-07-16 |
SG94799A1 (en) | 2003-03-18 |
CN1316675A (zh) | 2001-10-10 |
CN1210623C (zh) | 2005-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100719783B1 (ko) | 화학 증폭형 포지티브 내식막 조성물 | |
US6495306B2 (en) | Chemically amplified positive resist composition | |
KR100687464B1 (ko) | 화학적 증폭형 포지티브 내식막 조성물 | |
US6835527B2 (en) | Chemical amplifying type positive resist composition | |
US20010016298A1 (en) | Chemically amplified positive resist composition | |
KR100753783B1 (ko) | 화학적으로 증폭된 포지티브 내식막 조성물 | |
JP3972438B2 (ja) | 化学増幅型のポジ型レジスト組成物 | |
JP3928433B2 (ja) | レジスト組成物 | |
KR20020039241A (ko) | 화학 증폭형 포지티브 내식막 조성물 | |
EP0856773A1 (en) | Chemical amplification type positive resist composition | |
JP3890989B2 (ja) | レジスト組成物 | |
JP3994680B2 (ja) | 化学増幅型ポジ型レジスト組成物 | |
JP4239661B2 (ja) | 化学増幅型レジスト組成物 | |
JP4631229B2 (ja) | 化学増幅型ポジ型レジスト組成物 | |
JP4524940B2 (ja) | 化学増幅型ポジ型レジスト組成物 | |
JP4517524B2 (ja) | 化学増幅型ポジ型レジスト組成物 | |
US20020155378A1 (en) | Chemical amplifying type positive resist compositions | |
JP2002328475A (ja) | 化学増幅型ポジ型レジスト組成物 | |
JP2001318466A (ja) | 化学増幅型ポジ型レジスト組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130419 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140421 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150416 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160418 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170421 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180502 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190429 Year of fee payment: 13 |