KR100709544B1 - 접합체 및 접합 방법 - Google Patents
접합체 및 접합 방법 Download PDFInfo
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Abstract
Description
접합체의 4점 휨강도 | ||||||||
No. | 제1 세라믹스 | 제2 세라믹스 | 접합재 조성 (중량%) | 접합층 두께 (mm) | 4점 휨강도 (MPa) | 결함 | 파단 위치 | |
접합체 | 모재 | |||||||
1-1 | 질화알루미늄 | 질화알루미늄 | Al-10Si- 1.5Mg | 0.12 | 320 | 350 | 없음 | 모재 내부 |
1-2 | 탄화규소 | 탄화규소 | " | 0.12 | 550 | 570 | " | " |
1-3 | 알루미나 | 알루미나 | " | 0.12 | 340 | 380 | " | " |
1-4 | 질화규소 | 질화규소 | " | 0.12 | 720 | 780 | " | " |
1-5 | 질화알루미늄 | 질화알루미늄 | " | 0.05 | 300 | 350 | " | " |
1-6 | 질화알루미늄 | 질화알루미늄 | " | 0.03 | 320 | 350 | " | " |
1-7 | 질화알루미늄 | 질화알루미늄 | Al-5Mg | 0.1 | 300 | 350 | " | " |
1-8 | 탄화규소A | 탄화규소B | Al-10Si- 1.5Mg | 0.12 | 550 | 570 | " | " |
비교예1 | 질화알루미늄 | 탄화규소 | " | 0.12 | 250 | - | 접합계면 에 크랙 | 접합 계면 |
비교예2 | 질화알루미늄 | 질화알루미늄 | 99Al | 0.1 | 150 | 350 | 접합계면 에 간극 | " |
비교예3 | 질화알루미늄 | 질화알루미늄 | Al-10Mg | 0.1 | 120 | 350 | " | " |
비교예4 | 질화알루미늄 | 질화알루미늄 | Al-10Si- 1.5Mg | 0.02 | 80 | 350 | " | " |
비교예5 | 질화알루미늄 | 질화알루미늄 | " | 0.5 | 150 | 350 | " | " |
세라믹스 히터의 샤프트 접합부 누설 시험 결과 | ||
No. | 접합온도(℃) | 헬륨 가스의 누설량(Pa·m3/초) |
2-1 | 550 | 2.5×10-9 |
비교예6 | 595 | > 1×10-6 |
비교예7 | 524 | > 1×10-6 |
Claims (18)
- 제1 세라믹스 부재와,제2 세라믹스 부재와,연질 금속을 포함하고, 이 연질 금속의 액상선 미만의 접합 온도에서 열 압접됨으로써, 상기 제1 세라믹스 부재와 상기 제2 세라믹스 부재를 접합하는 접합층을 포함하며,상기 연질 금속은 알루미늄-규소-마그네슘(Al-Si-Mg) 합금이고,상기 접합 온도는 상기 연질 금속의 고상선으로부터 30 ℃ 감산한 온도 이상인 것인 접합체.
- 삭제
- 제1항에 있어서, 상기 알루미늄-규소-마그네슘(Al-Si-Mg) 합금은 마그네슘을 0.5 내지 5 중량% 포함하는 것인 접합체.
- 제1항에 있어서, 상기 접합층의 두께는 0.05 내지 0.3 mm인 것인 접합체.
- 제1항에 있어서, 상기 제1 세라믹스 부재와 상기 제2 세라믹스 부재의 열팽창 계수의 차가 1 ppm/k 이하인 것인 접합체.
- 제1항에 있어서, 상기 제1 세라믹스 부재 및 상기 제2 세라믹스 부재는 알루미나 또는 질화알루미늄 중 적어도 하나를 포함하는 것인 접합체.
- 삭제
- 제1항에 있어서, 상기 열 압접에서의 압력은 4.9 내지 19.8 MPa인 것인 접합체.
- 제1항에 있어서, 상기 접합체는 세라믹스 히터이고, 상기 제1 세라믹스 부재는 저항 발열체가 매설된 기체(基體)이며, 상기 제2 세라믹스 부재는 관상 부재인 것인 접합체.
- 제1 세라믹스 부재와 제2 세라믹스 부재 사이에 연질 금속을 포함하는 접합층을 개재시키는 단계와,상기 연질 금속의 액상선 미만의 접합 온도에서 상기 제1 세라믹스 부재와 상기 제2 세라믹 부재를 열 압접하는 단계를 포함하며,상기 연질 금속은 알루미늄-규소-마그네슘(Al-Si-Mg) 합금이고,상기 접합 온도는 상기 연질 금속의 고상선으로부터 30 ℃ 감산한 온도 이상인 것인 접합체 제조 방법.
- 삭제
- 제11항에 있어서, 상기 알루미늄-규소-마그네슘(Al-Si-Mg) 합금은 마그네슘을 0.5 내지 5 중량% 포함하는 것인 접합체 제조 방법.
- 제10항에 있어서, 상기 접합층의 두께는 0.05 내지 0.3 mm인 것인 접합체 제조 방법.
- 제10항에 있어서, 상기 제1 세라믹스 부재와 상기 제2 세라믹스 부재의 열팽창 계수의 차가 1 ppm /K 이하인 것인 접합체 제조 방법.
- 제10항에 있어서, 상기 제1 세라믹스 부재 및 상기 제2 세라믹스 부재는 알루미나 또는 질화알루미늄 중 적어도 하나를 포함하는 것인 접합체 제조 방법.
- 삭제
- 제10항에 있어서, 상기 열 압접에서의 압력은 4.9 내지 19.8 MPa인 것인 접합체 제조 방법.
- 제10항에 있어서, 상기 접합체는 세라믹스 히터이고, 상기 제1 세라믹스 부재는 저항 발열체가 매설된 기체이며, 상기 제2 세라믹스 부재는 관상 부재인 것인 접합체 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US65332005P | 2005-02-16 | 2005-02-16 | |
US60/653,320 | 2005-02-16 |
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KR20060092082A KR20060092082A (ko) | 2006-08-22 |
KR100709544B1 true KR100709544B1 (ko) | 2007-04-20 |
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US (1) | US7854975B2 (ko) |
EP (1) | EP1695949B1 (ko) |
JP (1) | JP5008875B2 (ko) |
KR (1) | KR100709544B1 (ko) |
DE (1) | DE602006006237D1 (ko) |
TW (1) | TW200633947A (ko) |
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US20050106794A1 (en) * | 2002-03-26 | 2005-05-19 | Fuji Electric Holdings Co., Ltd. | Method of manufacturing a semiconductor device |
JP4008401B2 (ja) * | 2003-09-22 | 2007-11-14 | 日本碍子株式会社 | 基板載置台の製造方法 |
US7696455B2 (en) * | 2006-05-03 | 2010-04-13 | Watlow Electric Manufacturing Company | Power terminals for ceramic heater and method of making the same |
NL1034606C2 (nl) * | 2007-10-30 | 2009-05-06 | Assembleon Bv | Verwarmbare plaat voor het verwarmen van een strookvormige drager voor het bevestigen van componenten aan de strookvormige drager alsmede een oven. |
DE102008036836A1 (de) * | 2008-08-07 | 2010-02-11 | Epcos Ag | Formkörper, Heizungsvorrichtung und Verfahren zur Herstellung eines Formkörpers |
DE102008036835A1 (de) * | 2008-08-07 | 2010-02-18 | Epcos Ag | Heizungsvorrichtung und Verfahren zur Herstellung der Heizungsvorrichtung |
US8580593B2 (en) * | 2009-09-10 | 2013-11-12 | Micron Technology, Inc. | Epitaxial formation structures and associated methods of manufacturing solid state lighting devices |
KR20130090788A (ko) * | 2010-05-21 | 2013-08-14 | 세라마테크, 인코오포레이티드 | 세라믹 대 세라믹 접합부 및 관련 방법 |
US8932690B2 (en) | 2011-11-30 | 2015-01-13 | Component Re-Engineering Company, Inc. | Plate and shaft device |
US11229968B2 (en) | 2011-11-30 | 2022-01-25 | Watlow Electric Manufacturing Company | Semiconductor substrate support with multiple electrodes and method for making same |
US8684256B2 (en) * | 2011-11-30 | 2014-04-01 | Component Re-Engineering Company, Inc. | Method for hermetically joining plate and shaft devices including ceramic materials used in semiconductor processing |
US9624137B2 (en) | 2011-11-30 | 2017-04-18 | Component Re-Engineering Company, Inc. | Low temperature method for hermetically joining non-diffusing ceramic materials |
JP6078450B2 (ja) * | 2012-10-26 | 2017-02-08 | 日本碍子株式会社 | 半導体製造装置用部材及びその製法 |
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TWI791590B (zh) * | 2017-08-14 | 2023-02-11 | 美商瓦特隆電子製造公司 | 接合石英件之方法及接合之石英的石英電極及其他裝置 |
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US10882130B2 (en) | 2018-04-17 | 2021-01-05 | Watlow Electric Manufacturing Company | Ceramic-aluminum assembly with bonding trenches |
JP6583897B1 (ja) * | 2018-05-25 | 2019-10-02 | ▲らん▼海精研股▲ふん▼有限公司 | セラミック製静電チャックの製造方法 |
CN110959306B (zh) | 2018-07-13 | 2022-02-11 | 日本碍子株式会社 | 陶瓷加热器 |
JP6959201B2 (ja) | 2018-08-29 | 2021-11-02 | 日本碍子株式会社 | セラミックヒータ |
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2006
- 2006-02-09 TW TW095104341A patent/TW200633947A/zh unknown
- 2006-02-14 JP JP2006036858A patent/JP5008875B2/ja active Active
- 2006-02-14 KR KR1020060013948A patent/KR100709544B1/ko active IP Right Grant
- 2006-02-15 US US11/354,428 patent/US7854975B2/en active Active
- 2006-02-16 DE DE602006006237T patent/DE602006006237D1/de active Active
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US4552301A (en) * | 1984-05-17 | 1985-11-12 | U.S. Philips Corporation | Method of bonding ceramic components together or to metallic components |
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JP5008875B2 (ja) | 2012-08-22 |
JP2006225260A (ja) | 2006-08-31 |
TW200633947A (en) | 2006-10-01 |
DE602006006237D1 (de) | 2009-05-28 |
US20060182908A1 (en) | 2006-08-17 |
EP1695949B1 (en) | 2009-04-15 |
US7854975B2 (en) | 2010-12-21 |
EP1695949A1 (en) | 2006-08-30 |
KR20060092082A (ko) | 2006-08-22 |
TWI321127B (ko) | 2010-03-01 |
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