KR100698444B1 - 화학 증폭 레지스트 재료용 광산 발생제, 및 이것을사용한 레지스트 재료 및 패턴 형성 방법 - Google Patents
화학 증폭 레지스트 재료용 광산 발생제, 및 이것을사용한 레지스트 재료 및 패턴 형성 방법 Download PDFInfo
- Publication number
- KR100698444B1 KR100698444B1 KR1020030017699A KR20030017699A KR100698444B1 KR 100698444 B1 KR100698444 B1 KR 100698444B1 KR 1020030017699 A KR1020030017699 A KR 1020030017699A KR 20030017699 A KR20030017699 A KR 20030017699A KR 100698444 B1 KR100698444 B1 KR 100698444B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- acid
- formula
- resist material
- carbon atoms
- Prior art date
Links
- 0 CC*O[N+](C)[O-] Chemical compound CC*O[N+](C)[O-] 0.000 description 4
- MIQTZYYJFRUPHK-LHEIEORASA-N Cc(cc1)ccc1S(Oc(c(OC)c1)ccc1S(O/N=C(\C(F)(F)F)/c(cc1)ccc1/C(/C(F)(F)F)=N\OS(c(cc1OC)ccc1OS(c1ccc(C)cc1)(=O)=O)(=O)=O)(=O)=O)(=O)=O Chemical compound Cc(cc1)ccc1S(Oc(c(OC)c1)ccc1S(O/N=C(\C(F)(F)F)/c(cc1)ccc1/C(/C(F)(F)F)=N\OS(c(cc1OC)ccc1OS(c1ccc(C)cc1)(=O)=O)(=O)=O)(=O)=O)(=O)=O MIQTZYYJFRUPHK-LHEIEORASA-N 0.000 description 1
- WOJZHFWSVYEJEF-LHEIEORASA-N Cc(cc1)ccc1S(Oc(c(OC)c1)ccc1S(O/N=C(\C(F)(F)F)/c1cccc(/C(/C(F)(F)F)=N\OS(c(cc2)cc(OC)c2OS(c2ccc(C)cc2)(=O)=O)(=O)=O)c1)(=O)=O)(=O)=O Chemical compound Cc(cc1)ccc1S(Oc(c(OC)c1)ccc1S(O/N=C(\C(F)(F)F)/c1cccc(/C(/C(F)(F)F)=N\OS(c(cc2)cc(OC)c2OS(c2ccc(C)cc2)(=O)=O)(=O)=O)c1)(=O)=O)(=O)=O WOJZHFWSVYEJEF-LHEIEORASA-N 0.000 description 1
- ZCKDTVNGLRNIDA-HPNDGRJYSA-N Cc(cc1)ccc1S(Oc(ccc(S(O/N=C(/C(F)(F)F)\c(cc1)ccc1OC)(=O)=O)c1)c1OC)(=O)=O Chemical compound Cc(cc1)ccc1S(Oc(ccc(S(O/N=C(/C(F)(F)F)\c(cc1)ccc1OC)(=O)=O)c1)c1OC)(=O)=O ZCKDTVNGLRNIDA-HPNDGRJYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/75—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
- C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
- C07D333/26—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D333/30—Hetero atoms other than halogen
- C07D333/36—Nitrogen atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00080649 | 2002-03-22 | ||
JP2002080649 | 2002-03-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040002467A KR20040002467A (ko) | 2004-01-07 |
KR100698444B1 true KR100698444B1 (ko) | 2007-03-23 |
Family
ID=29416585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030017699A KR100698444B1 (ko) | 2002-03-22 | 2003-03-21 | 화학 증폭 레지스트 재료용 광산 발생제, 및 이것을사용한 레지스트 재료 및 패턴 형성 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6916591B2 (US06916591-20050712-C00064.png) |
KR (1) | KR100698444B1 (US06916591-20050712-C00064.png) |
TW (1) | TW200403523A (US06916591-20050712-C00064.png) |
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US7932334B2 (en) * | 2005-12-27 | 2011-04-26 | Sumitomo Chemical Company, Limited | Resin suitable for an acid generator |
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JP4650644B2 (ja) * | 2008-05-12 | 2011-03-16 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP5381298B2 (ja) * | 2008-05-12 | 2014-01-08 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
JP4743450B2 (ja) * | 2008-09-05 | 2011-08-10 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5346806A (en) | 1991-04-20 | 1994-09-13 | Hoechst Aktiengesellschaft | Acid-cleavable radiation-sensitive compounds, radiation-sensitive mixture containing these compounds, and radiation-sensitive recording material produced with this mixture |
US5800964A (en) | 1995-09-29 | 1998-09-01 | Tokyo Ohka Kogyo Co., Ltd. | Photoresist composition |
US6245930B1 (en) | 1996-07-24 | 2001-06-12 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-sensitization resist composition |
KR20010060090A (ko) * | 1999-12-31 | 2001-07-06 | 김충섭 | 반응성 광산발생제와 이를 포함하는 폴리아미드 감광성내열절연체 조성물 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3660255D1 (en) | 1985-04-12 | 1988-07-07 | Ciba Geigy Ag | Oxime sulphonates containing reactive groups |
US5378715A (en) * | 1992-02-24 | 1995-01-03 | Bristol-Myers Squibb Co. | Sulfonamide endothelin antagonists |
JP2906999B2 (ja) | 1994-04-26 | 1999-06-21 | 信越化学工業株式会社 | レジスト材料 |
JP3830183B2 (ja) | 1995-09-29 | 2006-10-04 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
JP3587413B2 (ja) | 1995-12-20 | 2004-11-10 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
JP3798458B2 (ja) | 1996-02-02 | 2006-07-19 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
JP3879139B2 (ja) | 1996-05-08 | 2007-02-07 | 住友化学株式会社 | グリオキシム系エステル、その製法および用途 |
TW550439B (en) * | 1997-07-01 | 2003-09-01 | Ciba Sc Holding Ag | New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates |
JP3796559B2 (ja) | 1997-10-08 | 2006-07-12 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4420152B2 (ja) | 1999-03-26 | 2010-02-24 | 信越化学工業株式会社 | 高分子化合物及びその製造方法 |
SG78412A1 (en) * | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
JP4235779B2 (ja) | 1999-08-16 | 2009-03-11 | 信越化学工業株式会社 | 新規スルホニルジアゾメタン化合物及びレジスト材料用の光酸発生剤 |
JP4462397B2 (ja) | 1999-08-16 | 2010-05-12 | 信越化学工業株式会社 | 新規オニウム塩、レジスト材料及びパターン形成方法 |
JP4029558B2 (ja) | 1999-11-09 | 2008-01-09 | Jsr株式会社 | N−スルホニルオキシイミド化合物およびそれを用いた感放射線性樹脂組成物 |
NL1016815C2 (nl) | 1999-12-15 | 2002-05-14 | Ciba Sc Holding Ag | Oximester-fotoinitiatoren. |
JP4070393B2 (ja) * | 2000-01-17 | 2008-04-02 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
JP4288446B2 (ja) * | 2000-10-23 | 2009-07-01 | 信越化学工業株式会社 | 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法 |
US20040033440A1 (en) * | 2002-08-09 | 2004-02-19 | Kazunori Maeda | Photoacid generators, chemically amplified positive resist compositions, and patterning process |
-
2003
- 2003-03-21 KR KR1020030017699A patent/KR100698444B1/ko active IP Right Grant
- 2003-03-21 TW TW092106569A patent/TW200403523A/zh not_active IP Right Cessation
- 2003-03-21 US US10/393,006 patent/US6916591B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5346806A (en) | 1991-04-20 | 1994-09-13 | Hoechst Aktiengesellschaft | Acid-cleavable radiation-sensitive compounds, radiation-sensitive mixture containing these compounds, and radiation-sensitive recording material produced with this mixture |
US5800964A (en) | 1995-09-29 | 1998-09-01 | Tokyo Ohka Kogyo Co., Ltd. | Photoresist composition |
US6245930B1 (en) | 1996-07-24 | 2001-06-12 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-sensitization resist composition |
KR20010060090A (ko) * | 1999-12-31 | 2001-07-06 | 김충섭 | 반응성 광산발생제와 이를 포함하는 폴리아미드 감광성내열절연체 조성물 |
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US20030215738A1 (en) | 2003-11-20 |
TW200403523A (en) | 2004-03-01 |
KR20040002467A (ko) | 2004-01-07 |
TWI317047B (US06916591-20050712-C00064.png) | 2009-11-11 |
US6916591B2 (en) | 2005-07-12 |
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