KR100689917B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100689917B1
KR100689917B1 KR1020010002929A KR20010002929A KR100689917B1 KR 100689917 B1 KR100689917 B1 KR 100689917B1 KR 1020010002929 A KR1020010002929 A KR 1020010002929A KR 20010002929 A KR20010002929 A KR 20010002929A KR 100689917 B1 KR100689917 B1 KR 100689917B1
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South Korea
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film
insulating film
atoms
forming
less
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English (en)
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KR20010076349A (ko
Inventor
후루사와다께시
류자끼다이스께
사꾸마노리유끼
마찌다순따로
히노데겐지
요네야마료우
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
가부시기가이샤 히다치초엘에스아이시스템즈
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Assigned to 르네사스 일렉트로닉스 가부시키가이샤 reassignment 르네사스 일렉트로닉스 가부시키가이샤 권리의 전부이전등록 Assignors: 가부시기가이샤 히다치초엘에스아이시스템즈, 가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020010002929A 2000-01-18 2001-01-18 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100689917B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-013895 2000-01-18
JP2000013895A JP3615979B2 (ja) 2000-01-18 2000-01-18 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR20010076349A KR20010076349A (ko) 2001-08-11
KR100689917B1 true KR100689917B1 (ko) 2007-03-09

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KR1020010002929A Expired - Fee Related KR100689917B1 (ko) 2000-01-18 2001-01-18 반도체 장치 및 그 제조 방법

Country Status (4)

Country Link
US (2) US6358838B2 (https=)
JP (1) JP3615979B2 (https=)
KR (1) KR100689917B1 (https=)
TW (1) TW513763B (https=)

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US6500752B2 (en) * 2000-07-21 2002-12-31 Canon Sales Co., Inc. Semiconductor device and semiconductor device manufacturing method
WO2002017693A1 (fr) * 2000-08-18 2002-02-28 Mitsubishi Denki Kabushiki Kaisha Substrat d'installation, procede de montage d'un tel substrat et douille d'ampoule mettant en oeuvre ledit substrat
JP2002329722A (ja) * 2001-04-27 2002-11-15 Nec Corp 半導体装置及びその製造方法
US6699792B1 (en) * 2001-07-17 2004-03-02 Advanced Micro Devices, Inc. Polymer spacers for creating small geometry space and method of manufacture thereof
US6887780B2 (en) * 2001-08-31 2005-05-03 Intel Corporation Concentration graded carbon doped oxide
JP3913638B2 (ja) * 2001-09-03 2007-05-09 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP2003092349A (ja) * 2001-09-18 2003-03-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4063619B2 (ja) * 2002-03-13 2008-03-19 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP3516446B2 (ja) 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
US7071112B2 (en) * 2002-10-21 2006-07-04 Applied Materials, Inc. BARC shaping for improved fabrication of dual damascene integrated circuit features
US6867126B1 (en) * 2002-11-07 2005-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method to increase cracking threshold for low-k materials
US20040152295A1 (en) * 2003-02-03 2004-08-05 International Business Machines Corporation Sacrificial metal liner for copper
US7279410B1 (en) 2003-03-05 2007-10-09 Advanced Micro Devices, Inc. Method for forming inlaid structures for IC interconnections
US8137764B2 (en) * 2003-05-29 2012-03-20 Air Products And Chemicals, Inc. Mechanical enhancer additives for low dielectric films
US6767827B1 (en) 2003-06-11 2004-07-27 Advanced Micro Devices, Inc. Method for forming dual inlaid structures for IC interconnections
US6919636B1 (en) * 2003-07-31 2005-07-19 Advanced Micro Devices, Inc. Interconnects with a dielectric sealant layer
TWI285938B (en) * 2003-08-28 2007-08-21 Fujitsu Ltd Semiconductor device
JP4282493B2 (ja) * 2004-01-15 2009-06-24 株式会社東芝 膜形成方法及び基板処理装置
TW200605220A (en) * 2004-06-21 2006-02-01 Hitachi Chemical Co Ltd Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid
JP4854938B2 (ja) 2004-07-06 2012-01-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
US7332428B2 (en) * 2005-02-28 2008-02-19 Infineon Technologies Ag Metal interconnect structure and method
US7214612B2 (en) * 2005-08-31 2007-05-08 United Microelectronics Corp. Dual damascene structure and fabrication thereof
US7410899B2 (en) * 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
JP5154009B2 (ja) * 2005-10-21 2013-02-27 株式会社ジャパンディスプレイイースト 有機シロキサン系絶縁膜の製造方法、及び、この製造方法で製造した有機シロキサン系絶縁膜を層間絶縁として用いた液晶表示装置の製造方法
WO2007132879A1 (ja) * 2006-05-17 2007-11-22 Nec Corporation 半導体装置、半導体装置の製造方法及び半導体製造装置
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JP2013020530A (ja) * 2011-07-13 2013-01-31 Dainippon Printing Co Ltd タッチセンサパネル部材、タッチセンサパネル部材を備えた表示装置、及びタッチセンサパネル部材の製造方法
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Also Published As

Publication number Publication date
JP2001203200A (ja) 2001-07-27
US20020105085A1 (en) 2002-08-08
JP3615979B2 (ja) 2005-02-02
KR20010076349A (ko) 2001-08-11
US20010009295A1 (en) 2001-07-26
US6680541B2 (en) 2004-01-20
TW513763B (en) 2002-12-11
US6358838B2 (en) 2002-03-19

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