JP3615979B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP3615979B2
JP3615979B2 JP2000013895A JP2000013895A JP3615979B2 JP 3615979 B2 JP3615979 B2 JP 3615979B2 JP 2000013895 A JP2000013895 A JP 2000013895A JP 2000013895 A JP2000013895 A JP 2000013895A JP 3615979 B2 JP3615979 B2 JP 3615979B2
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JP
Japan
Prior art keywords
film
insulating film
silicon
atoms
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000013895A
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English (en)
Japanese (ja)
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JP2001203200A (ja
JP2001203200A5 (https=
Inventor
健志 古澤
大介 龍崎
憲之 佐久間
俊太郎 町田
憲治 日野出
亮 米山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Hitachi Solutions Technology Ltd
Original Assignee
Renesas Technology Corp
Hitachi ULSI Systems Co Ltd
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Filing date
Publication date
Application filed by Renesas Technology Corp, Hitachi ULSI Systems Co Ltd filed Critical Renesas Technology Corp
Priority to JP2000013895A priority Critical patent/JP3615979B2/ja
Priority to US09/760,777 priority patent/US6358838B2/en
Priority to TW090101031A priority patent/TW513763B/zh
Priority to KR1020010002929A priority patent/KR100689917B1/ko
Publication of JP2001203200A publication Critical patent/JP2001203200A/ja
Priority to US10/050,859 priority patent/US6680541B2/en
Publication of JP2001203200A5 publication Critical patent/JP2001203200A5/ja
Application granted granted Critical
Publication of JP3615979B2 publication Critical patent/JP3615979B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2000013895A 2000-01-18 2000-01-18 半導体装置及びその製造方法 Expired - Fee Related JP3615979B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000013895A JP3615979B2 (ja) 2000-01-18 2000-01-18 半導体装置及びその製造方法
US09/760,777 US6358838B2 (en) 2000-01-18 2001-01-17 Semiconductor device and process for producing the same
TW090101031A TW513763B (en) 2000-01-18 2001-01-17 Semiconductor device and process for producing the same
KR1020010002929A KR100689917B1 (ko) 2000-01-18 2001-01-18 반도체 장치 및 그 제조 방법
US10/050,859 US6680541B2 (en) 2000-01-18 2002-01-18 Semiconductor device and process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000013895A JP3615979B2 (ja) 2000-01-18 2000-01-18 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2001203200A JP2001203200A (ja) 2001-07-27
JP2001203200A5 JP2001203200A5 (https=) 2004-12-24
JP3615979B2 true JP3615979B2 (ja) 2005-02-02

Family

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Family Applications (1)

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JP2000013895A Expired - Fee Related JP3615979B2 (ja) 2000-01-18 2000-01-18 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US6358838B2 (https=)
JP (1) JP3615979B2 (https=)
KR (1) KR100689917B1 (https=)
TW (1) TW513763B (https=)

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JP2002329722A (ja) * 2001-04-27 2002-11-15 Nec Corp 半導体装置及びその製造方法
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US6887780B2 (en) * 2001-08-31 2005-05-03 Intel Corporation Concentration graded carbon doped oxide
JP3913638B2 (ja) * 2001-09-03 2007-05-09 東京エレクトロン株式会社 熱処理方法及び熱処理装置
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JP4063619B2 (ja) * 2002-03-13 2008-03-19 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP3516446B2 (ja) 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
US7071112B2 (en) * 2002-10-21 2006-07-04 Applied Materials, Inc. BARC shaping for improved fabrication of dual damascene integrated circuit features
US6867126B1 (en) * 2002-11-07 2005-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method to increase cracking threshold for low-k materials
US20040152295A1 (en) * 2003-02-03 2004-08-05 International Business Machines Corporation Sacrificial metal liner for copper
US7279410B1 (en) 2003-03-05 2007-10-09 Advanced Micro Devices, Inc. Method for forming inlaid structures for IC interconnections
US8137764B2 (en) * 2003-05-29 2012-03-20 Air Products And Chemicals, Inc. Mechanical enhancer additives for low dielectric films
US6767827B1 (en) 2003-06-11 2004-07-27 Advanced Micro Devices, Inc. Method for forming dual inlaid structures for IC interconnections
US6919636B1 (en) * 2003-07-31 2005-07-19 Advanced Micro Devices, Inc. Interconnects with a dielectric sealant layer
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JP4854938B2 (ja) 2004-07-06 2012-01-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
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Also Published As

Publication number Publication date
JP2001203200A (ja) 2001-07-27
US20020105085A1 (en) 2002-08-08
KR100689917B1 (ko) 2007-03-09
KR20010076349A (ko) 2001-08-11
US20010009295A1 (en) 2001-07-26
US6680541B2 (en) 2004-01-20
TW513763B (en) 2002-12-11
US6358838B2 (en) 2002-03-19

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