KR100650468B1 - 반도체 집적 회로 장치 및 그 제조 방법 - Google Patents

반도체 집적 회로 장치 및 그 제조 방법 Download PDF

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Publication number
KR100650468B1
KR100650468B1 KR1020000032336A KR20000032336A KR100650468B1 KR 100650468 B1 KR100650468 B1 KR 100650468B1 KR 1020000032336 A KR1020000032336 A KR 1020000032336A KR 20000032336 A KR20000032336 A KR 20000032336A KR 100650468 B1 KR100650468 B1 KR 100650468B1
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South Korea
Prior art keywords
conductor layer
bit line
capacitor
insulating film
delete delete
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KR1020000032336A
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English (en)
Korean (ko)
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KR20010020983A (ko
Inventor
마쯔오까히데유끼
야마다사또루
아사노이사무
나가이료
세끼구찌도모노리
다께무라리이찌로
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20010020983A publication Critical patent/KR20010020983A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/907—Folded bit line dram configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/908—Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020000032336A 1999-06-14 2000-06-13 반도체 집적 회로 장치 및 그 제조 방법 Expired - Lifetime KR100650468B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-166320 1999-06-14
JP16632099A JP4063450B2 (ja) 1999-06-14 1999-06-14 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR20010020983A KR20010020983A (ko) 2001-03-15
KR100650468B1 true KR100650468B1 (ko) 2006-11-28

Family

ID=15829179

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000032336A Expired - Lifetime KR100650468B1 (ko) 1999-06-14 2000-06-13 반도체 집적 회로 장치 및 그 제조 방법

Country Status (4)

Country Link
US (2) US6621110B1 (enExample)
JP (1) JP4063450B2 (enExample)
KR (1) KR100650468B1 (enExample)
TW (1) TW473987B (enExample)

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FR2839581B1 (fr) * 2002-05-07 2005-07-01 St Microelectronics Sa Circuit electronique comprenant un condensateur et au moins un composant semiconducteur, et procede de conception d'un tel circuit
KR100480601B1 (ko) * 2002-06-21 2005-04-06 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
KR100492899B1 (ko) * 2002-11-18 2005-06-02 주식회사 하이닉스반도체 반도체소자 및 그 제조 방법
DE10259634B4 (de) * 2002-12-18 2008-02-21 Qimonda Ag Verfahren zur Herstellung von Kontakten auf einem Wafer
KR100502669B1 (ko) * 2003-01-28 2005-07-21 주식회사 하이닉스반도체 반도체 메모리소자 및 그 제조 방법
JP2004311706A (ja) * 2003-04-07 2004-11-04 Toshiba Corp 半導体装置及びその製造方法
JP4342854B2 (ja) * 2003-07-09 2009-10-14 株式会社東芝 半導体装置及びその製造方法
JP4627977B2 (ja) 2003-10-14 2011-02-09 ルネサスエレクトロニクス株式会社 半導体装置
US7375033B2 (en) 2003-11-14 2008-05-20 Micron Technology, Inc. Multi-layer interconnect with isolation layer
KR100630683B1 (ko) * 2004-06-02 2006-10-02 삼성전자주식회사 6ｆ2 레이아웃을 갖는 디램 소자
KR100706233B1 (ko) * 2004-10-08 2007-04-11 삼성전자주식회사 반도체 기억 소자 및 그 제조방법
KR100604911B1 (ko) 2004-10-20 2006-07-28 삼성전자주식회사 하부전극 콘택을 갖는 반도체 메모리 소자 및 그 제조방법
KR100593746B1 (ko) * 2004-12-24 2006-06-28 삼성전자주식회사 디램의 커패시터들 및 그 형성방법들
KR100752644B1 (ko) 2005-04-12 2007-08-29 삼성전자주식회사 반도체 소자의 셀영역 레이아웃 및 이를 이용한 콘택패드제조방법
KR100693879B1 (ko) * 2005-06-16 2007-03-12 삼성전자주식회사 비대칭 비트 라인들을 갖는 반도체 장치 및 이를 제조하는방법
KR100654353B1 (ko) * 2005-06-28 2006-12-08 삼성전자주식회사 커패시터를 구비하는 반도체 집적 회로 장치 및 이의 제조방법
US7687342B2 (en) * 2005-09-01 2010-03-30 Micron Technology, Inc. Method of manufacturing a memory device
US7557032B2 (en) 2005-09-01 2009-07-07 Micron Technology, Inc. Silicided recessed silicon
US8716772B2 (en) 2005-12-28 2014-05-06 Micron Technology, Inc. DRAM cell design with folded digitline sense amplifier
KR100876881B1 (ko) * 2006-02-24 2008-12-31 주식회사 하이닉스반도체 반도체 소자의 패드부
US7349232B2 (en) * 2006-03-15 2008-03-25 Micron Technology, Inc. 6F2 DRAM cell design with 3F-pitch folded digitline sense amplifier
JP2007294618A (ja) * 2006-04-24 2007-11-08 Elpida Memory Inc 半導体装置の製造方法及び半導体装置
US20080035956A1 (en) * 2006-08-14 2008-02-14 Micron Technology, Inc. Memory device with non-orthogonal word and bit lines
US7521763B2 (en) * 2007-01-03 2009-04-21 International Business Machines Corporation Dual stress STI
KR100898394B1 (ko) 2007-04-27 2009-05-21 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US8294188B2 (en) * 2008-10-16 2012-10-23 Qimonda Ag 4 F2 memory cell array
JP2010219139A (ja) * 2009-03-13 2010-09-30 Elpida Memory Inc 半導体装置及びその製造方法
JP2010219326A (ja) * 2009-03-17 2010-09-30 Elpida Memory Inc 半導体記憶装置及びその製造方法
KR101076888B1 (ko) * 2009-06-29 2011-10-25 주식회사 하이닉스반도체 반도체 소자의 연결 배선체 및 형성 방법
JP2011023652A (ja) * 2009-07-17 2011-02-03 Elpida Memory Inc 半導体記憶装置
US8558320B2 (en) * 2009-12-15 2013-10-15 Qualcomm Incorporated Systems and methods employing a physically asymmetric semiconductor device having symmetrical electrical behavior
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5831687B2 (ja) * 2011-07-22 2015-12-09 ソニー株式会社 記憶装置およびその製造方法
CN105905231A (zh) * 2016-05-19 2016-08-31 国家海洋局第海洋研究所 便携双体船
CN109427787A (zh) 2017-08-30 2019-03-05 联华电子股份有限公司 半导体存储装置
CN113903740B (zh) * 2020-07-06 2025-05-09 华邦电子股份有限公司 半导体存储器结构及其形成方法
US11637107B2 (en) 2021-06-17 2023-04-25 Applied Materials, Inc. Silicon-containing layer for bit line resistance reduction
US11716838B2 (en) * 2021-08-11 2023-08-01 Micron Technology, Inc. Semiconductor device and method for forming the wiring structures avoiding short circuit thereof
CN115996560B (zh) * 2021-10-15 2025-07-25 长鑫存储技术有限公司 一种存储器及其制造方法

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KR940007876A (ko) * 1992-09-08 1994-04-28 김광호 폴디드 비트라인 방식의 디램쎌 어레이
KR19990083078A (ko) * 1998-04-09 1999-11-25 가네코 히사시 반도체 메모리 장치
KR20010003628A (ko) * 1999-06-24 2001-01-15 김영환 반도체 메모리셀 구조 및 제조방법

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JP3368002B2 (ja) 1993-08-31 2003-01-20 三菱電機株式会社 半導体記憶装置
TW377495B (en) * 1996-10-04 1999-12-21 Hitachi Ltd Method of manufacturing semiconductor memory cells and the same apparatus
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KR19990083078A (ko) * 1998-04-09 1999-11-25 가네코 히사시 반도체 메모리 장치
KR20010003628A (ko) * 1999-06-24 2001-01-15 김영환 반도체 메모리셀 구조 및 제조방법

Also Published As

Publication number Publication date
TW473987B (en) 2002-01-21
KR20010020983A (ko) 2001-03-15
US20040021159A1 (en) 2004-02-05
JP4063450B2 (ja) 2008-03-19
US6621110B1 (en) 2003-09-16
JP2000353793A (ja) 2000-12-19
US6809364B2 (en) 2004-10-26

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