KR100642929B1 - 도전성 산화물 소결체, 이 소결체로부터 이루어진스퍼터링 타겟트 및 이들의 제조방법 - Google Patents

도전성 산화물 소결체, 이 소결체로부터 이루어진스퍼터링 타겟트 및 이들의 제조방법 Download PDF

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KR100642929B1
KR100642929B1 KR1020057001336A KR20057001336A KR100642929B1 KR 100642929 B1 KR100642929 B1 KR 100642929B1 KR 1020057001336 A KR1020057001336 A KR 1020057001336A KR 20057001336 A KR20057001336 A KR 20057001336A KR 100642929 B1 KR100642929 B1 KR 100642929B1
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conductive oxide
sintered body
srruo
mol
oxide sintered
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KR20050030211A (ko
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스즈키료
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닛코킨조쿠 가부시키가이샤
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
KR1020057001336A 2002-08-06 2003-06-12 도전성 산화물 소결체, 이 소결체로부터 이루어진스퍼터링 타겟트 및 이들의 제조방법 Expired - Lifetime KR100642929B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00228165 2002-08-06
JP2002228165A JP4544501B2 (ja) 2002-08-06 2002-08-06 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法

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KR20050030211A KR20050030211A (ko) 2005-03-29
KR100642929B1 true KR100642929B1 (ko) 2006-11-10

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KR1020057001336A Expired - Lifetime KR100642929B1 (ko) 2002-08-06 2003-06-12 도전성 산화물 소결체, 이 소결체로부터 이루어진스퍼터링 타겟트 및 이들의 제조방법

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US (1) US7252794B2 (enExample)
JP (1) JP4544501B2 (enExample)
KR (1) KR100642929B1 (enExample)
MY (1) MY142079A (enExample)
TW (1) TWI227744B (enExample)
WO (1) WO2004016824A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4351213B2 (ja) * 2003-09-03 2009-10-28 日鉱金属株式会社 スパッタリング用ターゲット及びその製造方法
KR100881851B1 (ko) * 2004-03-01 2009-02-06 닛코킨조쿠 가부시키가이샤 고순도 루테니움 분말, 이 고순도 루테니움 분말을소결하여 얻는 스퍼터링 타겟트 및 이 타겟트를 스퍼터링하여 얻은 박막 및 고순도 루테니움 분말의 제조방법
US7686985B2 (en) * 2005-06-28 2010-03-30 Nippon Mining & Metals Co., Ltd Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film
KR101004981B1 (ko) * 2005-06-28 2011-01-04 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 산화갈륨-산화아연계 스퍼터링 타겟, 투명 도전막의 형성방법 및 투명 도전막
US8118984B2 (en) * 2006-02-22 2012-02-21 Jx Nippon Mining & Metals Corporation Sintered sputtering target made of refractory metals
JP4552950B2 (ja) * 2006-03-15 2010-09-29 住友金属鉱山株式会社 ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜
SG11202011990SA (en) 2018-08-09 2021-01-28 Jx Nippon Mining & Metals Corp Sputtering target, granular film, and perpendicular magnetic recording medium

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Publication number Priority date Publication date Assignee Title
US5624542A (en) 1992-05-11 1997-04-29 Gas Research Institute Enhancement of mechanical properties of ceramic membranes and solid electrolytes
JPH0656503A (ja) 1992-08-10 1994-03-01 Showa Denko Kk Ｉｔｏ焼結体
DE4421007A1 (de) 1994-06-18 1995-12-21 Philips Patentverwaltung Elektronisches Bauteil und Verfahren zu seiner Herstellung
JP3710021B2 (ja) 1997-06-03 2005-10-26 三井金属鉱業株式会社 酸化錫−酸化第一アンチモン焼結体ターゲットおよびその製造方法
JP3636914B2 (ja) 1998-02-16 2005-04-06 株式会社日鉱マテリアルズ 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット
JP3768007B2 (ja) 1998-06-17 2006-04-19 株式会社日鉱マテリアルズ 高純度ＳｒｘＢｉｙＴａ２Ｏ５＋ｘ＋３ｙ／２スパッタリングターゲット材
JP2000034563A (ja) 1998-07-14 2000-02-02 Japan Energy Corp 高純度ルテニウムスパッタリングターゲットの製造方法及び高純度ルテニウムスパッタリングターゲット
JP2000128638A (ja) 1998-10-30 2000-05-09 Kyocera Corp ルテニウム酸ストロンチウム焼結体とその製造方法及びこれを用いたスパッタリングターゲット
US6132487A (en) 1998-11-11 2000-10-17 Nikko Materials Company, Limited Mixed powder for powder metallurgy, sintered compact of powder metallurgy, and methods for the manufacturing thereof
JP2000247739A (ja) * 1999-02-25 2000-09-12 Vacuum Metallurgical Co Ltd 高密度Ｐｔ系金属含有金属導電性酸化物およびその製造方法
JP3745553B2 (ja) 1999-03-04 2006-02-15 富士通株式会社 強誘電体キャパシタ、半導体装置の製造方法
JP4790118B2 (ja) * 2000-12-26 2011-10-12 Ｊｘ日鉱日石金属株式会社 酸化物焼結体及びその製造方法
JP2002211978A (ja) 2001-01-11 2002-07-31 Hitachi Metals Ltd ストロンチウム・ルテニウム酸化物焼結体の製造方法およびストロンチウム・ルテニウム酸化物焼結体

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US7252794B2 (en) 2007-08-07
US20060071197A1 (en) 2006-04-06
JP2004068073A (ja) 2004-03-04
TWI227744B (en) 2005-02-11
WO2004016824A1 (ja) 2004-02-26
JP4544501B2 (ja) 2010-09-15
TW200402476A (en) 2004-02-16
MY142079A (en) 2010-08-30
KR20050030211A (ko) 2005-03-29

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