KR100477166B1 - 산화물 소결체 및 그 제조방법 - Google Patents
산화물 소결체 및 그 제조방법 Download PDFInfo
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- KR100477166B1 KR100477166B1 KR10-2002-7010943A KR20027010943A KR100477166B1 KR 100477166 B1 KR100477166 B1 KR 100477166B1 KR 20027010943 A KR20027010943 A KR 20027010943A KR 100477166 B1 KR100477166 B1 KR 100477166B1
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- Prior art keywords
- sintered body
- less
- oxide
- mruo
- sintering
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- 238000000034 method Methods 0.000 title description 8
- 238000005245 sintering Methods 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 9
- 229910052776 Thorium Inorganic materials 0.000 claims abstract description 8
- 229910052770 Uranium Inorganic materials 0.000 claims abstract description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 8
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 8
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 238000010304 firing Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 229910004121 SrRuO Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 3
- 230000002285 radioactive effect Effects 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 229910016062 BaRuO Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- -1 Na and K Chemical class 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (6)
- Na, K 등의 알칼리 금속 원소 및 Fe, Ni, Co, Cr, Cu, A1의 함유량이 총 합계로서 100 ppm 이하, U, Th의 각 원소의 함유량이 10 ppb 이하이며, 또한 상대밀도가 90% 이상인 것을 특징으로 하는 MRuO3의 화학식으로 나타내는 페로부스카이트 구조를 가지는 산화물 소결체. 단, M : Ca, Sr, Ba의 어느 것이든 1종 이상임.
- 제1항에 있어서, 상대밀도가 95% 이상, 항절력(抗折力)이 300 ㎏/㎠ 이상, 비저항이 330 μΩ㎝ 이하인 것을 특징으로 하는 산화물 소결체.
- Na, K 등의 알칼리 금속 원소 및 Fe, Ni, Co, Cr, Cu, Al의 함유량이 총합계로서 100 ppm 이하, U, Th의 각 원소의 함유량이 10 ppb 이하이며, 상대밀도가 90% 이상인 MRuO3, 단, M : Ca, Sr, Ba의 어느 것이든 1종 이상, 의 화학식으로 나타내는 페로부스카이트 구조를 가지는 산화물 분말을 가압 소결할 때, Al2O3, ZrO2 또는 Si3N4 의 세라믹스로 제작된 다이스 또는 Al2O3 혹은 ZrO2 의 산화물 또는 Si3N4, Ru, Pt, Ir, Co, Ni로 피복한 다이스를 사용하여, 핫 프레스에 의해 소결 온도 1200∼1400℃, 가압력 200 ㎏/㎠ 이상으로 가압 소결하는 것을 특징으로 하는 산화물 소결체의 제조방법.
- 제3항에 있어서, 상대밀도가 95% 이상, 항절력이 300 ㎏/㎠ 이상, 비저항이 330 μΩ㎝ 이하인 것을 특징으로 하는 산화물 소결체의 제조방법.
- 제3항 또는 제4항에 있어서, 아르곤 가스 분위기 중에서 소결하는 것을 특징으로 하는 산화물 소결체의 제조방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2000-00394263 | 2000-12-26 | ||
JP2000394263A JP4790118B2 (ja) | 2000-12-26 | 2000-12-26 | 酸化物焼結体及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020092964A KR20020092964A (ko) | 2002-12-12 |
KR100477166B1 true KR100477166B1 (ko) | 2005-03-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-7010943A KR100477166B1 (ko) | 2000-12-26 | 2001-09-17 | 산화물 소결체 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6843975B1 (ko) |
JP (1) | JP4790118B2 (ko) |
KR (1) | KR100477166B1 (ko) |
TW (1) | TW553917B (ko) |
WO (1) | WO2002051769A1 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4544501B2 (ja) * | 2002-08-06 | 2010-09-15 | 日鉱金属株式会社 | 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法 |
JP4351213B2 (ja) * | 2003-09-03 | 2009-10-28 | 日鉱金属株式会社 | スパッタリング用ターゲット及びその製造方法 |
US20060255328A1 (en) * | 2005-05-12 | 2006-11-16 | Dennison Charles H | Using conductive oxidation for phase change memory electrodes |
EP1897968B1 (en) * | 2005-06-28 | 2013-08-07 | JX Nippon Mining & Metals Corporation | Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film |
WO2007000878A1 (ja) * | 2005-06-28 | 2007-01-04 | Nippon Mining & Metals Co., Ltd. | 酸化ガリウム-酸化亜鉛系スパッタリングターゲット、透明導電膜の形成方法及び透明導電膜 |
US8118984B2 (en) * | 2006-02-22 | 2012-02-21 | Jx Nippon Mining & Metals Corporation | Sintered sputtering target made of refractory metals |
JP4552950B2 (ja) * | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
KR100787635B1 (ko) * | 2007-01-22 | 2007-12-21 | 삼성코닝 주식회사 | 산화인듐주석 타겟, 이의 제조 방법 및 이로부터 제조된산화인듐주석 투명 전극 |
US8617429B2 (en) * | 2010-09-13 | 2013-12-31 | Korea Institute Of Science And Technology | Composite electrode active material having M1-xRuxO3 (M=Sr, Ba, Mg), supercapacitor using the same and fabrication method thereof |
CN102259937B (zh) * | 2011-07-11 | 2014-04-02 | 中国科学院上海硅酸盐研究所 | 一种钌酸锶靶的制备方法 |
CN104831321B (zh) * | 2015-04-20 | 2018-04-03 | 北京科技大学 | 一种氧化物惰性阳极的制造及应用方法 |
CN104961165A (zh) * | 2015-06-19 | 2015-10-07 | 东华大学 | 一种表面改性的氧化钌水合物及其制备及应用 |
CN107021766A (zh) * | 2017-05-25 | 2017-08-08 | 嘉兴新耐建材有限公司 | 一种炼铁用耐火浇注料 |
CN107698262A (zh) * | 2017-07-26 | 2018-02-16 | 航天特种材料及工艺技术研究所 | 一种陶瓷材料 |
KR102655140B1 (ko) * | 2020-09-14 | 2024-04-05 | 엔지케이 인슐레이터 엘티디 | 복합 소결체, 반도체 제조 장치 부재 및 복합 소결체의 제조 방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5624542A (en) * | 1992-05-11 | 1997-04-29 | Gas Research Institute | Enhancement of mechanical properties of ceramic membranes and solid electrolytes |
DE4421007A1 (de) * | 1994-06-18 | 1995-12-21 | Philips Patentverwaltung | Elektronisches Bauteil und Verfahren zu seiner Herstellung |
JP3303065B2 (ja) * | 1995-01-24 | 2002-07-15 | 三菱マテリアル株式会社 | Ru薄膜形成用スパッタリングターゲット |
JP3710021B2 (ja) * | 1997-06-03 | 2005-10-26 | 三井金属鉱業株式会社 | 酸化錫−酸化第一アンチモン焼結体ターゲットおよびその製造方法 |
JP3768007B2 (ja) * | 1998-06-17 | 2006-04-19 | 株式会社日鉱マテリアルズ | 高純度SrxBiyTa2O5+x+3y/2スパッタリングターゲット材 |
JP2000128638A (ja) * | 1998-10-30 | 2000-05-09 | Kyocera Corp | ルテニウム酸ストロンチウム焼結体とその製造方法及びこれを用いたスパッタリングターゲット |
JP2000247739A (ja) * | 1999-02-25 | 2000-09-12 | Vacuum Metallurgical Co Ltd | 高密度Pt系金属含有金属導電性酸化物およびその製造方法 |
JP3745553B2 (ja) * | 1999-03-04 | 2006-02-15 | 富士通株式会社 | 強誘電体キャパシタ、半導体装置の製造方法 |
-
2000
- 2000-12-26 JP JP2000394263A patent/JP4790118B2/ja not_active Expired - Lifetime
-
2001
- 2001-09-17 WO PCT/JP2001/008044 patent/WO2002051769A1/ja active IP Right Grant
- 2001-09-17 KR KR10-2002-7010943A patent/KR100477166B1/ko active IP Right Grant
- 2001-09-17 US US10/130,238 patent/US6843975B1/en not_active Expired - Lifetime
- 2001-12-04 TW TW090129920A patent/TW553917B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP4790118B2 (ja) | 2011-10-12 |
TW553917B (en) | 2003-09-21 |
KR20020092964A (ko) | 2002-12-12 |
WO2002051769A1 (fr) | 2002-07-04 |
US6843975B1 (en) | 2005-01-18 |
JP2002193668A (ja) | 2002-07-10 |
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